Laser-MBE Improving growth of β-Ga2O3 films by introducing a Homo-Amorphous nucleation seed layer for solar-blind deep UV photodetector applications DOI

Dongyu Song,

Zhe Wu,

Weizhe Cui

et al.

Materials Science and Engineering B, Journal Year: 2024, Volume and Issue: 313, P. 117890 - 117890

Published: Dec. 6, 2024

Language: Английский

Mixed-Dimensional PtSe2/Bi2Te3/Pyramid Si Heterojunction with a Light-Trapping Structure for Highly Sensitive Ultrabroadband Photodetection DOI
Xin Li,

Kunxuan Liu,

Ranran Zhuo

et al.

ACS Photonics, Journal Year: 2024, Volume and Issue: 11(5), P. 2070 - 2076

Published: April 18, 2024

Broadband photodetectors have garnered widespread attention in the realm of modern optoelectronic devices and systems due to their pivotal role various applications. Topological insulators emerged as promising candidates for broadband photodetection by leveraging distinct electrical optoelectrical properties. Here, we report successful fabrication a topological insulator Bi2Te3/pyramidal Si heterojunction, incorporating top two-dimensional PtSe2 layer highly sensitive image sensing. Owing light trapping structure pyramidal broad absorption spectrum mixed-dimensional hybrid structure, photodetector exhibits self-powered ultrabroadband response range spanning 265 nm 10.6 μm, with responsivity up 620 mW/A, specific detectivity 1.37 × 1012 cm Hz1/2 W–1, fast speed 0.45/18 μs. Additionally, integrated PtSe2/Bi2Te3/pyramid detector array has demonstrated exceptional imaging capabilities. This study provides feasible pathway realizing

Language: Английский

Citations

12
PtSe2/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection DOI
Jiang Wang, Can Fu, Mengting Jiang

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(29)

Published: June 21, 2024

Abstract Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for optoelectronic devices. Here, a self‐powered NIR Schottky junction photodetector is demonstrated by vertically stacking PtSe 2 film atop an InP wafer. built‐in electric field formed at /InP interface endows operation ultralow dark current 45 pA room temperature under 0 V bias. responsivity detectivity 940 nm illumination reach up 0.718 A W −1 4.37 × 10 12 Jones, respectively. Furthermore, TCAD simulations showed that significant pivotal its detection Remarkably, achieves I light /I ratio exceeding 5 fast response time 4.35/5.66 µs, sensitivity polarization. This study provides perspective integration hybrid 3D semiconductors next‐generation devices integrated systems.

Language: Английский

Citations

7
Investigation of In2SexOy/In2Se3/Si dual-junction photodiode for self-powered broadband photodetection DOI

Kuangkuang Li,

Ling Kang,

Wenbo Li

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 124(3)

Published: Jan. 15, 2024

We report a dual-junction strategy for fabricating high-performance In2SexOy/In2Se3/Si heterojunction photodiode by oxidizing the epitaxial In2Se3 thin films. The device exhibits suppressed dark current (4.2 × 10−11 A) and enhanced photocurrent at zero bias, benefiting from double built-in electric fields. Consequently, it demonstrates excellent uniform self-powered broadband (255–1050 nm) photodetection performance with typical responsivity of several hundred mA/W, detectivity over 5 1011 Jones. Moreover, fast response speed time 0.20 ms is achieved. Our investigation offers potential route to construct full-spectrum photodetectors.

Language: Английский

Citations

4
Mixed‐Dimensional 2D PtSe2/3D a‐Ga2O3 Heterojunction for Self‐Driven Broadband Photodetector with High Responsivity in UV Region DOI

Junjie Rong,

Huili Liang, Rui Zhu

et al.

physica status solidi (a), Journal Year: 2024, Volume and Issue: unknown

Published: April 28, 2024

Self‐driven broadband photodetectors have wide applications in the fields of biomedicine, remote sensing, rescue, and mineral exploration with advantages energy conservation multiband detection. However, most present are suffering from a fast degradation photoresponsivity ultraviolet (UV) region. To resolve it, self‐driven photodetector is proposed based on mixed‐dimensional 2D PtSe 2 /3D amorphous Ga O 3 (a‐Ga ) heterojunction considering high UV responsivity a‐Ga thin film. obtained film by simple selenization method directly. The completed device region about 14 172 times higher than that visible NIR regions, respectively. In addition, benefiting excellent built‐in electric field at carrier mobility , photogenerated electron–hole pairs can be rapidly separated. As result, its rise time (9.36 ms) decay (11.27 much faster those current ‐based (≈100–1000 ms). This work provides novel building block via facile strategy for further development high‐performance, low‐cost, energy‐efficient photodetectors.

Language: Английский

Citations

4
Metamaterials for high-performance smart sensors DOI

Renquan Guan,

Hao Xu, Zheng Lou

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(4)

Published: Dec. 1, 2024

In recent years, metamaterials have shown great potential in various fields such as optics, acoustics, and electromagnetics. Sensors based on been gradually applied daily production, life, military. Metamaterials are artificial materials with unique properties that ordinary do not possess. Through clever microstructure design, they can achieve different demonstrated significant areas like holographic projection, absorbing materials, super-resolution microscopy. devices convert external environmental changes into recognizable signals, playing a crucial role healthcare, industry, Therefore, the development of sensors high sensitivity, low detection limit, wide range, easy integration is significance. only these improvements but also offer advantages anti-interference stealth sensing, which traditional lack. These enhancements new features for sensor field's development. This article summarizes benefits metamaterial terms increased expanded ease system integration. It systematically discusses their applications biomedical gas sensing. The focus trends metamaterial-based future human providing systematic guidance advancement.

Language: Английский

Citations

4
High-performance 405-nm photodetector based on the defect-induced absorption in the rutile GeO2 film DOI
Jia‐Bao Liu, Chengming Wei, Cheng Yang

et al.

Solid State Communications, Journal Year: 2025, Volume and Issue: unknown, P. 115856 - 115856

Published: Jan. 1, 2025

Language: Английский

Citations

0
High-performance, reliable and self-powered solar-blind photodetectors based on GQDs/α-Ga2O3 heterojunctions DOI

Chunlin Wen,

Zhenhua Tang, Tingsu Liu

et al.

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 106122 - 106122

Published: Feb. 1, 2025

Language: Английский

Citations

0
Ga2O3 Hole Blocking layer for Suppressing Vis-NIR Response in p-Si/ZnO Heterojunction Photodetectors DOI

Hepeng Zhao,

Dayong Jiang, Man Zhao

et al.

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 179521 - 179521

Published: March 1, 2025

Language: Английский

Citations

0
Defect-induced persistent photoconductivity and nonvolatility in two-dimensional Bi2Se3 thin film for neuromorphic vision sensing capability DOI
Lei Chen, Wen He, Dongbo Wang

et al.

Journal of Colloid and Interface Science, Journal Year: 2025, Volume and Issue: 689, P. 137252 - 137252

Published: March 6, 2025

Language: Английский

Citations

0
Nano-Interface Charge Transfer in Ga2O3@(Co, Ni)S2 Heterojunction Ultraviolet Photodetectors DOI
Zhu Xi, Ziwei Pan, Yutong Wu

et al.

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 5, 2025

Language: Английский

Citations

0