Applied Physics Letters,
Journal Year:
2024,
Volume and Issue:
125(9)
Published: Aug. 26, 2024
Inspired
by
the
human
brain's
capacity
as
a
powerful
biological
computer
capable
of
simultaneously
processing
vast
array
cognitive
tasks,
many
emerging
artificial
synapse
devices
have
been
developed
in
recent
years.
Electric-double-layer
(EDL)
transistors
based
on
interfacial
ion-modulation
attracted
widespread
attention
for
simulating
synaptic
plasticity
and
neural
functions.
Here,
low-voltage
EDL
p-type
thin-film
(TFTs)
are
fabricated
glass
substrates,
with
Ni-doped
cuprous
iodide
(Ni0.06Cu0.94I)
channel
chitosan
dielectric.
The
electrical
performance
Ni0.06Cu0.94I
TFTs
is
investigated:
current
on/off
ratio
6.4
×
104,
subthreshold
swing
33
mV/dec,
threshold
voltage
1.38
V,
operating
2
saturation
field-effect
mobility
15.75
cm2
V−1
s−1.
A
dual
in-plane
gate
OR
logic
operation
demonstrated.
Importantly,
applying
single
pulses,
multiple
pulses
to
gate,
exhibited
typical
characteristics,
including
short-term
potentiation,
depression,
long-term
paired-pulse
facilitation,
spiking-rate-dependent
plasticity.
Furthermore,
transistor
can
also
simulate
learning–forgetting–relearning
process
brain.
These
remarkable
behaviors
voltage-stimulated
potential
neuromorphic
applications
future
systems.
The Journal of Physical Chemistry Letters,
Journal Year:
2024,
Volume and Issue:
15(34), P. 8667 - 8675
Published: Aug. 19, 2024
Emerging
optoelectronic
memristive
devices
with
high
parallelism
and
low-power
consumption
have
made
neuromorphic
computing
hardware
a
tangible
reality.
The
coordination
of
conductivity
regulation
through
both
electrical
light
signals
is
pivotal
for
advancing
the
development
synaptic
memristors
brainlike
functionalities.
Here,
an
artificial
visual
synapse
presented
Ti3C2
MXene
memristor
which
demonstrates
not
only
nonvolatile
memory
effect
(Set/Reset:
0.58/–0.55
V;
Retention:
>103
s)
sustained
multistage
conductivity,
but
also
facile
modulation
electrical-
light-stimulated
behaviors.
By
adjusting
stimulus
parameters,
enables
realization
biosynaptic
excitatory
postsynaptic
current,
stable
long-term
facilitation/depression,
paired
pulse
facilitation,
spiking-timing-dependent
plasticity,
experiential
learning.
Particularly,
benefiting
from
distinguishable
photoconductive
effects
multiple
near-infrared
intensities
(7–13
mW/cm2),
potential
applications
in
nociceptive
perception
("threshold",
"noadaption",
"relaxation")
imaging
(e.g.,
"Superman"
cartoon
character)
infrared
environments
are
well
achieved
such
memristors.
These
results
hold
significant
implications
future
advancement
integrated
sensing,
memory,
nociception,
systems.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Sept. 27, 2024
Abstract
Optoelectronic
synapses,
constructed
from
2D
transition
metal
dichalcogenides
(TMDs)
with
atomic‐scale
thickness,
offer
substantial
benefits
for
the
development
of
high‐density
integrated
artificial
neural
visual
systems
(ANVSs).
Effective
charge
capture
and
retention
are
essential
realizing
synaptic
memory
function.
Although
trapping
is
realized
by
gate‐voltage‐regulated
three‐terminal
devices
or
interface‐modulated
heterostructures,
they
involve
high
energy
consumption
complex
device
structures.
Another
approach
to
introduce
material
defects
post‐processing
methods
trap
carriers,
but
this
method
inevitably
damages
pristine
materials
requires
intricate
fabrication
processes.
In
study,
chemical
vapor
deposition
(CVD)
employed
directly
Re
atoms
as
point
into
MoS
2
,
which
act
centers
capturing
eliminating
need
structures
procedures.
The
resultant
Mo
x
(1−
)
S
nanofilms
nanoribbons
exhibit
excellent
optoelectronic
properties
broadband
photoresponse
characteristics
respectively,
due
varying
doping
concentrations.
synapses
based
on
can
simulate
human
color
recognition,
attributed
their
differential
response
light
wavelengths,
possess
image
preprocessing
capabilities
noise
reduction
contrast
enhancement.
study
provides
a
simple
fabricating
thereby
facilitating
integration
TMDs
ANVSs.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 13, 2025
Abstract
High‐density
bio‐electrolyte‐gated
synaptic
transistors
(BEGTs)
array
are
promising
for
constructing
neuromorphic
computing
architectures.
Due
to
the
bulk
ion
conductivity
and
crack
sensitivity
of
electrolyte
film,
patterning
is
an
indispensable
route
prevent
spatial
crosstalk
improve
flexibility
device
array.
However,
susceptibility
bio‐electrolyte
organic
solvents
poses
challenges
in
developing
reliable
all‐photolithography
techniques
fabricating
scalable,
patterned,
high‐density
BEGTs
This
study
introduces
method
that
adopts
a
photo‐crosslinker‐enabled
create
(11846
devices
per
cm
2
)
multimodal
demonstrates
essential
behaviors
without
inter‐device
maintains
its
flexibility,
enduring
200
bending
cycles
at
6
mm
radius
significant
performance
degradation.
Meanwhile,
exhibits
behavior,
not
only
successfully
mimicking
biological
visual
memory
system
sensing
processing
images
but
also
proving
highly
accurate
classifying
handwritten
digits,
making
it
suitable
systems.
work
offers
dependable
strategy
scalable
stable
fabrication
array,
providing
valuable
insights
advancing
artificial
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 18, 2025
Abstract
The
increasing
demand
for
energy
supply
in
sensing
units
and
the
computational
efficiency
of
computation
has
prompted
researchers
to
explore
novel,
integrated
technology
that
offers
high
low
consumption.
Self‐powered
enables
environmental
perception
without
external
sources,
while
neuromorphic
provides
energy‐efficient
high‐performance
computing
capabilities.
integration
self‐powered
presents
a
promising
solution
an
all‐in‐one
system.
This
review
examines
recent
developments
advancements
artificial
neuron
devices
based
on
triboelectric,
piezoelectric,
photoelectric
effects,
focusing
their
structures,
mechanisms,
functions.
Furthermore,
it
compares
electrical
characteristics
various
types
discusses
effective
methods
enhancing
performance.
Additionally,
this
comprehensive
summary
systems,
encompassing
tactile,
visual,
auditory
systems.
Moreover,
elucidates
recently
systems
combine
perception,
computing,
actuation
into
configurations,
aspiring
realize
closed‐loop
control.
seamless
holds
significant
potential
shaping
more
intelligent
future
humanity.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 26, 2025
Ferroelectric
materials
represent
a
frontier
in
semiconductor
research,
offering
the
potential
for
novel
optoelectronics.
AlScN
material
is
kind
of
outstanding
ferroelectric
with
strong
residual
polarization,
high
Curie
temperature,
and
mainstream
fabrication
compatibility.
However,
it
challenging
to
realize
multi-state
optical
responders
due
their
limited
light
sensitivity.
Here,
two-terminal
AlScN/p-i-n
GaN
heterojunction
ultraviolet
optoelectronic
synapse
fabricated,
overcoming
this
limitation
by
leveraging
hole
capture
at
AlScN/p-GaN
hetero-interface
modulation.
The
structure
maintains
excellent
memristor
characteristics
based
on
AlScN,
realizing
an
on/off
ratio
9.36
×
105.
More
importantly,
device
can
mimic
synaptic
essential
artificial
vision
systems,
achieving
image
recognition
accuracy
93.7%
weight
evolution
nonlinearity
0.26.
This
approach
not
only
extends
applications
optoelectronics
but
also
paves
way
advanced
systems
preprocessing
capabilities.
findings
provide
step
forward
development
non-volatile
memories
on-chip
sensing
computing.
ACS Sustainable Chemistry & Engineering,
Journal Year:
2024,
Volume and Issue:
12(35), P. 13361 - 13370
Published: Aug. 20, 2024
Drawing
on
the
function
of
biological
synapses,
development
electronic
synaptic
devices
aims
to
achieve
a
neuromorphic
computing
system
with
high
performance
and
low
energy
consumption.
In
this
work,
Ruddlesen–Popper
phase
Ba2TiO4/TiO2
heterojunction
memristor
was
prepared
by
sol–gel
method.
Hysteresis
loops
piezoelectric
force
microscopy
demonstrate
excellent
ferroelectric
properties
Ba2TiO4,
which
allows
Ba2TiO4-based
exhibit
multiresistive
state
under
applied
voltage.
Synaptic
characteristics
such
as
short/long-term
plasticity
paired-pulse
facilitation/depression
are
achieved
through
electrical
pulses.
addition,
achieves
nonvolatile
modulation
stimulation
optical
pulses,
mainly
attributed
promoting
separation
photogenerated
carriers.
The
"learning
experience"
process
is
successfully
achieved,
minimum
consumption
single
event
only
0.051
pJ.
A
reservoir
neural
network
constructed
evaluate
reliability
memristors.
recognition
accuracy
clothing
data
sets
reaches
91.2%.
Our
research
provides
an
idea
for
explaining
photoelectric
