Navigating the metaverse: unraveling the impact of artificial intelligence—a comprehensive review and gap analysis

Artificial Intelligence Review, Journal Year: 2024, Volume and Issue: 57(10)

Published: Aug. 20, 2024

Abstract In response to the burgeoning interest in Metaverse—a virtual reality-driven immersive digital world—this study delves into pivotal role of AI shaping its functionalities and elevating user engagement. Focused on recent advancements, prevailing challenges, potential future developments, our research draws from a comprehensive analysis grounded meticulous methodology. The study, informed by credible sources including SD, Scopus, IEEE, WoS, encompasses 846 retrieved studies. Through rigorous selection process, 54 papers were identified as relevant, forming basis for specific taxonomy Metaverse. Our examination spans diverse dimensions Metaverse, encompassing augmented reality, mixed Blockchain, Agent Systems, Intelligent NPCs, Societal Educational Impact, HCI Systems Design, Technical Aspects. Emphasizing necessity adopting trustworthy findings underscore enhance experience, safeguard privacy, promote responsible technology use. This paper not only sheds light scholarly Metaverse but also explores impact human behavior, education, societal norms, community dynamics. Serving foundation development implementation concept, identifies addresses seven open issues, providing indispensable insights subsequent studies integration

Language: Английский

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One-vs-One, One-vs-Rest, and a novel Outcome-Driven One-vs-One binary classifiers enabled by optoelectronic memristors towards overcoming hardware limitations in multiclass classification

Discover Materials, Journal Year: 2024, Volume and Issue: 4(1)

Published: March 3, 2024

Abstract Deep neural networks have achieved considerable success over the past ten years in a variety of fields. However, current state-of-the-art artificial intelligence (AI) systems require large computing hardware infrastructure and high power consumption. To overcome these hurdles, it is required to adopt new strategies such as designing novel computation architectures developing building blocks that can mimic low energy consumption biological systems. On architecture level, implementing classification tasks by splitting problem into simpler subtasks way relax constraints despite less accuracy approach. unit memristive devices are promising technology for neuromorphic computation. Hereby, we combine both two approaches present algorithmic approach multiclass through binary while using optoelectronics memristors synapses. Our leverages core fundamentals from One-vs-One (OvO) One-vs-Rest (OvR) towards Outcome-Driven (ODOvO) The light modulation synaptic weights, fed our algorithm experimental data, key enabling parameter permits without modifying further applied electrical biases. requires at least 10X synapses (only 196 required) reduces time up $$\frac{N}{2}$$ N 2 compared conventional memristors. We show ODOvO has similar accuracies OvO (reaching 60% on MNIST dataset) requiring even fewer iterations OvR. Consequently, constitutes feasible solution where priorities minimum i.e., small number, fast execution, requirements allowing verification.

Language: Английский

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Saturation Mobility of 100 cm² V^–1 s^–1 in ZnO Thin-Film Transistors through Quantum Confinement by a Nanoscale In₂O₃ Interlayer Using Spray Pyrolysis

ACS Nano, Journal Year: 2024, Volume and Issue: 18(44), P. 30484 - 30496

Published: Oct. 24, 2024

In this study, we present a comprehensive study on the fabrication and characterization of heterojunction In2O3/ZnO thin-film transistors (TFTs) aimed at exploiting quantum confinement effect to enhance device performance. By systematically optimizing thickness crystalline In2O3 (c-In2O3) layer create narrow well, observed significant increase in saturation mobility (μSAT) from 12.76 97.37 cm2 V–1 s–1. This enhancement, attributed confinement, was achieved through deposition 3 nm c-In2O3 semiconductor via spray pyrolysis. Various thicknesses (2–5 nm) were obtained by adjusting precursor solution concentration, flow rate, number cycles. Post annealing treatments employed reduce defects interface within oxide film, enhancing stability Transmission electron microscopy (TEM) confirmed uniformity film thickness, while variations significantly influenced TFT performance, particularly turn-on voltage (VGS) due changes carrier concentration. Ultraviolet photoelectron spectroscopy (UPS) X-ray (XPS) supported formation potential well with two-dimensional gas (2DEG). The single multiple superlattice structures consecutive c-ZnO layers provided insights into effects wells research presents an advanced approach optimization, highlighting high reliability, environmental bias stabilities. These lead enhanced performance precise control for effect.

Language: Английский

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Frequency Multipliers Based on a Dual-Gate Graphene FET with M-Shaped Resistance Characteristics on a Flexible Substrate

Electronics, Journal Year: 2025, Volume and Issue: 14(4), P. 803 - 803

Published: Feb. 19, 2025

Frequency multipliers are essential components in communication systems, and graphene’s exceptional electrical properties make it highly promising for flexible electronics. This paper addresses the technical challenges of multi-frequency based on graphene field-effect transistors (GFETs) introduces a novel fabrication method using as channel material metals with different work functions top gate. By employing Ti Pd distinct functions, we develop dual-gate GFET device that exhibits stable M-shaped resistance characteristics polyethylene naphthalate (PEN) substrate. We demonstrate frequency doubler, tripler, quadrupler The results show GFET-based multiplier offers advantages such low operating voltage (<1 V), high conversion efficiency (up to 8.4% tripler 6% quadrupler), spectral purity 88% 76% quadrupler). intrinsic maximum reaches 54 GHz. use monolayer channel, dual-metal gate control enabling an transfer curve, all contribute its superior performance compared conventional devices.

Language: Английский

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High-Mobility Crystalline Hexagonal Homologous Compound IZTO Thin-Film Transistors for Next-Generation Active-Matrix Organic Light-Emitting Diode Displays: A Metal-Induced Crystallization Approach

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: March 12, 2025

While amorphous indium gallium zinc oxide (α-IGZO) thin film transistors (TFTs) are practical alternatives to silicon-based TFTs, their field-effect mobility (∼50 cm2/(V s), depending on deposition conditions) remains insufficient meet the growing demands of high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The need for high-performance TFTs with ≥100 s) has become critical evolving display industry's requirements. This study explored development high-mobility hexagonal homologous compound (HC) tin (IZTO) as an alternative α-IGZO TFTs. A metal-induced crystallization (MIC) technique using tantalum (Ta) was employed induce in IZTO films at significantly reduced annealing temperatures, overcoming fabrication challenges associated nonuniform capping layer etching. HC were optimized In/Zn/Sn stoichiometry 15:75:10 and a thickness 10 nm. resulting exhibited exceptional performance, μFE 110.6 ± 2.4 threshold voltage (VTH) 0.2 0.3 V, subthreshold gate swing 116.8 1.4 mV/dec, ION/OFF ratio 8.2 × 109. Furthermore, devices excellent reproducibility, VTH standard deviation ±0.3 V across 30 devices, outstanding stability under both positive negative bias temperature stress, shifts +0.08 -0.05 respectively, after 3 h 80 °C. These results set new benchmark physical vapor (PVD)-based multicomponent highlighting potential next-generation, AMOLED displays enhanced reliability, manufacturability.

Language: Английский

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Femtosecond laser melting upconversion nanoparticles for sub-micrometer optical patterning

Optics Express, Journal Year: 2025, Volume and Issue: 33(7), P. 16317 - 16317

Published: March 20, 2025

This study introduces a method for precise modulation of upconversion luminescence (UCL) in UCNP thin films via laser-induced melting, enabling high-resolution, sub-micrometer optical patterning. By employing 460-nm femtosecond (fs) laser, localized melting disrupts the crystalline lattice, facilitating tunable UCL quenching with efficiencies exceeding 90%. approach relies solely on intrinsic properties UCNPs, avoiding need composite materials or complex multi-stimulus systems. The technique provides control modulation, making it suitable sub-micrometer-scale

Language: Английский

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Design Principles of Flexible Substrates and Polymer Electrolytes for Flexible Zinc Ion Batteries

Small, Journal Year: 2025, Volume and Issue: unknown

Published: March 25, 2025

Flexible ZIBs are gaining significant attention as a cost-effective and inherently safe energy storage technology with promising applications in next-generation flexible wearable devices. The rising demand for electronics has spurred the advancement of batteries. However, widespread adoption liquid electrolytes zinc-ion batteries been hindered by persistent challenges, including leakage, water evaporation, parasitic water-splitting reactions, which pose obstacles to commercialization. Free-standing substrates solid-state polymer key enhancing density, ionic conductivity, power mechanical strength, flexibility ZIBs. Herein, this review highlights recent progress strategies developing high-efficiency systems, focusing on advancements (transitioning from rigid flexible), (shifting solid), adaptability (from non-portable portable designs), transition laboratory research practical industrial applications. Critical assessments advanced modification approaches presented, emphasizing their role achieving safe, flexible, stretchable, wearable, self-healing Finally, future directions development designing effective discussed.

Language: Английский

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Innovative reliable nanoscale QCA circuits for advanced morphological image processing

AIP Advances, Journal Year: 2025, Volume and Issue: 15(4)

Published: April 1, 2025

Quantum-dot cellular automata (QCA) technology has emerged as a promising alternative to conventional VLSI, offering benefits such minimal power consumption, rapid switching, and remarkably compact circuit footprint. These properties make QCA particularly suitable for designing nano-scale circuits in advanced image processing applications. Morphological operations, prominent part of processing, are widely utilized tasks enhancement, object recognition, medical imaging, autonomous systems. However, existing QCA-based operations face limitations speed, accuracy, resource efficiency, necessitating novel optimized designs. This research introduces new, reliable architecture designed morphological processing. The proposed design incorporates two majority gates control line seamlessly perform dilation erosion. Through immediate interactions with cells, the achieves substantial enhancements covered space, quantum cost. Extensive simulations using QCADesigner QCADesigner-E validate circuit’s performance, demonstrating its capability produce accurate results fault tolerance while minimizing energy depletion. Comparative analyses highlight outperforming circuits. advancements position robust efficient solution next-generation applications, potential applications facial vehicle

Language: Английский

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Emerging 2D Material‐Based Synaptic Devices: Principles, Mechanisms, Improvements, and Applications

SmartMat, Journal Year: 2025, Volume and Issue: 6(2)

Published: April 1, 2025

ABSTRACT The von Neumann architecture is encountering challenges, including the “memory wall” and “power due to separation of memory central processing units, which imposes a major hurdle on today's massive data processing. Neuromorphic computing, combines storage spatiotemporal computation at hardware level, represents computing paradigm that surpasses traditional architecture. Artificial synapses are basic building blocks artificial neural networks capable neuromorphic require high on/off ratio, durability, low nonlinearity, multiple conductance states. Recently, two‐dimensional (2D) materials their heterojunctions have emerged as nanoscale development platform for synaptic devices intrinsic surface‐to‐volume ratios sensitivity charge transfer interfaces. Here, latest progress 2D material‐based reviewed regarding biomimetic principles, physical mechanisms, optimization methods, application scenarios. In particular, there focus how improve resistive switching characteristics plasticity meet actual needs. Finally, key technical challenges future paths also explored.

Language: Английский

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Threshold Resistive Switching in Inorganic Lead-Free Cesium–Bismuth Iodide Perovskite for Neuron Emulation

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 4, 2025

High-performance halide-based perovskite memory devices have been developed, exhibiting a variety of synaptic and neuronal functions based on nonvolatile volatile or threshold switching memristors, respectively, compatible with low power consumption. However, the key ingredient in these perovskite-based systems is presence highly toxic lead, which hinders their further development commercial use. A lead-free approach for memristive applications could enable sustainable devices, opening path practical applications. Herein, we report fabrication characterization resistive device using solution-based manufacturing, lead-free, all-inorganic perovskite, namely cesium-bismuth iodide (Cs3Bi2I9) perovskite. The exhibits current-voltage (I-V) characteristics an ON/OFF ratio >104, while operating 0 V-5 V range cycling endurance 650 cycles reproducible behavior. Furthermore, linear long-term, threshold-dependent potentiation protocols, accompanied by abrupt resistance suppression under depression are demonstrated. nature allowed implementation current spiking activation, similar to neuron thus emulation. These results can advance environmentally friendly neuromorphic computing applications, providing cost-effective alternative oxide-based devices.

Language: Английский

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