Nanomaterials,
Journal Year:
2024,
Volume and Issue:
14(23), P. 1872 - 1872
Published: Nov. 22, 2024
Strain
engineering
provides
an
attractive
approach
to
enhance
device
performance
by
modulating
the
intrinsic
electrical
properties
of
materials.
This
is
especially
applicable
2D
materials,
which
exhibit
high
sensitivity
mechanical
stress.
However,
conventional
methods,
such
as
using
polymer
substrates,
apply
strain
have
limitations
in
that
temporary
and
global.
Here,
we
introduce
a
novel
induce
permanent
localized
fabricating
stressor
on
SiO
ACS Nano,
Journal Year:
2024,
Volume and Issue:
18(22), P. 14327 - 14338
Published: May 20, 2024
In
this
study,
we
investigate
the
coexistence
of
short-
and
long-term
memory
effects
owing
to
programmable
retention
characteristics
a
two-dimensional
Au/MoS2/Au
atomristor
device
determine
impact
these
on
synaptic
properties.
This
is
constructed
using
bilayer
MoS2
in
crossbar
structure.
The
presence
both
proposed
by
filament
model
within
transition-metal
dichalcogenide.
Short-
properties
are
validated
based
multilevel
tests.
Moreover,
confirm
various
device,
demonstrating
its
potential
use
as
neuromorphic
system.
Excitatory
postsynaptic
current,
paired-pulse
facilitation,
spike-rate-dependent
plasticity,
spike-number-dependent
plasticity
applications
implemented
operating
at
low-conductance
level.
Furthermore,
potentiation
depression
exhibit
symmetrical
high-conductance
levels.
Synaptic
learning
forgetting
emulated
composite
plasticity.
process
artificial
neural
networks
used
achieve
high
pattern
recognition
accuracy,
thereby
suitability
Finally,
physical
reservoir
with
time-dependent
inputs
realize
computing
short-term
Our
study
reveals
that
can
be
applied
intelligence-based
utilizing
Nano Convergence,
Journal Year:
2024,
Volume and Issue:
11(1)
Published: June 27, 2024
Two-dimensional
(2D)
materials
have
emerged
as
promising
building
blocks
for
next
generation
memristive
devices,
owing
to
their
unique
electronic,
mechanical,
and
thermal
properties,
resulting
in
effective
switching
mechanisms
charge
transport.
Memristors
are
key
components
a
wide
range
of
applications
including
neuromorphic
computing,
which
is
becoming
increasingly
important
artificial
intelligence
applications.
Crossbar
arrays
an
component
the
development
hardware-based
neural
networks
composed
2D
materials.
In
this
paper,
we
summarize
current
state
research
on
material-based
devices
utilizing
different
mechanisms,
along
with
application
these
crossbar
arrays.
Additionally,
discuss
challenges
future
directions
field.
npj 2D Materials and Applications,
Journal Year:
2024,
Volume and Issue:
8(1)
Published: Dec. 21, 2024
The
scalability
of
two-dimensional
(2D)
materials
down
to
a
single
monolayer
offers
exciting
prospects
for
high-speed,
energy-efficient,
scalable
memristors.
This
review
highlights
the
development
2D
material-based
memristors
and
potential
applications
beyond
memory,
including
neuromorphic,
in-memory,
in-sensor,
complex
computing.
also
encompasses
challenges
future
opportunities
advancing
these
technologies,
underscoring
transformative
impact
on
versatile
sustainable
electronic
devices
systems.
Advanced Electronic Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 23, 2025
Abstract
This
study
investigates
the
electrical
properties
of
SnO
2
/SnS
heterojunction
as
interlayer
for
resistive
random
access
memory
(RRAM).
In
this
work,
(NH
4
)
Sn
S
6
is
used
a
source
production
heterojunction.
The
results
indicate
that
annealing
temperature
increases,
composition
SnS
based
thin
film
changes
while
cycle‐to‐cycle
stability
device
improved.
examined
by
X‐ray
photoelectron
spectroscopy
(XPS),
scanning
electronic
microscopy
(SEM)
and
atomic
force
(AFM),
which
proves
formation
Devices
with
exhibited
lower
operating
voltages
more
uniform
switching
behavior.
RRAM
can
be
repeatedly
consistently
switched
between
high‐resistance
state
low‐resistance
over
1000
cycles,
long
data
retention
time
>
×
10
s
at
room
temperature.
Meanwhile,
explores
relationship
type
neuromorphic
simulation
human
brain.
224
PJ
set
power
0.4
V
pulse
shows
excellent
characteristics.
provides
vital
reference
high‐performance
long‐lifespan
devices.
