Enhanced Absorption in SnS/SnSe, SnS/ZnS, and SnS/ZnSe vdW Heterostructures for Optoelectronic Applications: DFT Insights DOI

Ashish Raturi,

Poornima Mittal,

Sudhanshu Choudhary

et al.

Physica Scripta, Journal Year: 2024, Volume and Issue: 99(12), P. 125508 - 125508

Published: Oct. 21, 2024

Abstract The electronic and optical properties of monolayers tin monochalcogenides zinc are elucidated by utilizing density functional theory. calculated results indicate that the (SnS SnSe) have low bandgap significant absorption in some segments visible region (∼400 nm to ∼500 nm). However, (ZnS ZnSe) wide negligible region, which limits their performance. Despite ZnS ZnSe exhibit fascinating such as band gap, cheapness, toxicity, earth abundance, structural stability, high refractive index. To identify combined potential tin, van der Waals heterostructures SnS/SnSe, SnS/ZnS, SnS/ZnSe formed, calculated. illustrate formed lowering enhanced light absorption. is entirely shifted towards due formation heterostructure (redshift). narrowed make them a candidate for fabrication optoelectronic devices solar cells.

Language: Английский

Electrically Tunable Strong Exciton Resonance of Second Harmonic Generation in van der Waals Heterostructures DOI

Hongjian Wu,

Haitao Chen,

Jinsen Han

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 7, 2025

Abstract Nanomaterials with strong and tunable nonlinear responses have lots of applications are always being sought. Two‐dimensional (2D) transition metal dichalcogenides (TMDs) materials emerging candidates second‐order nonlinearity. However, methods to efficiently tune their optical nonlinearity remain challenging. Herein, a new method the response from monolayer TMDs within van der Waals heterostructures (vdWHs) electrically is demonstrated. Dynamic tuning local second‐harmonic generation (SHG) up 100% in graphene/h‐BN/WSe 2 corresponding efficiency ≈12.5% per volt realized, benefitting exciton resonance. Furthermore, long‐standing issue that how interfacial carrier transfer resonance affect at same time figured out by control experiments theoretical calculation. The work will pave way for constructing efficient on‐chip optoelectronic devices based on strengthen understanding excitonic dynamics 2D materials.

Language: Английский

Citations

0
Enhanced Absorption in SnS/SnSe, SnS/ZnS, and SnS/ZnSe vdW Heterostructures for Optoelectronic Applications: DFT Insights DOI

Ashish Raturi,

Poornima Mittal,

Sudhanshu Choudhary

et al.

Physica Scripta, Journal Year: 2024, Volume and Issue: 99(12), P. 125508 - 125508

Published: Oct. 21, 2024

Abstract The electronic and optical properties of monolayers tin monochalcogenides zinc are elucidated by utilizing density functional theory. calculated results indicate that the (SnS SnSe) have low bandgap significant absorption in some segments visible region (∼400 nm to ∼500 nm). However, (ZnS ZnSe) wide negligible region, which limits their performance. Despite ZnS ZnSe exhibit fascinating such as band gap, cheapness, toxicity, earth abundance, structural stability, high refractive index. To identify combined potential tin, van der Waals heterostructures SnS/SnSe, SnS/ZnS, SnS/ZnSe formed, calculated. illustrate formed lowering enhanced light absorption. is entirely shifted towards due formation heterostructure (redshift). narrowed make them a candidate for fabrication optoelectronic devices solar cells.

Language: Английский

Citations

2