Physica E Low-dimensional Systems and Nanostructures, Journal Year: 2025, Volume and Issue: unknown, P. 116179 - 116179
Published: Jan. 1, 2025
Language: Английский
Physica E Low-dimensional Systems and Nanostructures, Journal Year: 2025, Volume and Issue: unknown, P. 116179 - 116179
Published: Jan. 1, 2025
Language: Английский
Journal of Physics and Chemistry of Solids, Journal Year: 2024, Volume and Issue: 193, P. 112125 - 112125
Published: June 3, 2024
Language: Английский
Citations
59Sensors, Journal Year: 2024, Volume and Issue: 24(3), P. 762 - 762
Published: Jan. 24, 2024
The gas sensitivity of the W defect in WS2 (VW/WS2) to five toxic gases—HCHO, CH4, CH3HO, CH3OH, and CH3CH3—has been examined this article. These gases were adsorbed on VW/WS2 surface, band, density state (DOS), charge difference (CDD), work function (W), current–voltage (I–V) characteristic, adsorption systems determined. Interestingly, for HCHO-VW/WS2, energy level contribution HCHO is closer Fermi level, transfer (B) largest (0.104 e), increase more obvious than other systems, slope I–V characteristic changes obviously, calculated highest. To sum up, sensitive HCHO. In conclusion, has a great deal promise producing chemical sensors due its high selectivity HCHO, which can aid precise efficient detection gases.
Language: Английский
Citations
45Chinese Journal of Physics, Journal Year: 2024, Volume and Issue: 91, P. 421 - 431
Published: Aug. 1, 2024
Language: Английский
Citations
33International Journal of Hydrogen Energy, Journal Year: 2024, Volume and Issue: 88, P. 898 - 905
Published: Sept. 24, 2024
Language: Английский
Citations
33Applied Surface Science, Journal Year: 2024, Volume and Issue: unknown, P. 161853 - 161853
Published: Nov. 1, 2024
Language: Английский
Citations
19Physical Chemistry Chemical Physics, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 1, 2025
GaN/Sc 2 CCl heterojunction carrier mobility reaches up to 5670 cm V −1 s and photocurrent 12.78 a 0 per photon.
Language: Английский
Citations
7Applied Surface Science, Journal Year: 2024, Volume and Issue: 658, P. 159851 - 159851
Published: March 7, 2024
Language: Английский
Citations
8The Journal of Physical Chemistry C, Journal Year: 2024, Volume and Issue: 128(28), P. 11827 - 11834
Published: June 26, 2024
Language: Английский
Citations
7International Journal of Hydrogen Energy, Journal Year: 2024, Volume and Issue: 66, P. 676 - 688
Published: April 18, 2024
Language: Английский
Citations
6ACS Applied Nano Materials, Journal Year: 2024, Volume and Issue: 7(11), P. 12431 - 12444
Published: May 30, 2024
Biphenylene network (BPN) structures have garnered attention owing to the presence of 4-, 6-, 8-, and 12-membered rings in their unit cells, leading unique properties. Additionally, versatility aluminum (Al) combined with group V elements, particularly nitrogen (N) atoms, presents promising applications across various domains. These factors motivated us investigate BPN-AlN containing using density functional theory methods. lead large holes, making this structure useful for ion storage energy materials. This study contains stability (thermal, mechanical, dynamical), structural, electronic, thermoelectric, optical properties nanosheet. The dynamic proposed nanosheet was confirmed by absence negative modes phonon dispersion spectrum. Furthermore, minimal fluctuations ab initio molecular dynamics simulation, even at a high temperature 1500 K, prove thermal calculation leads nanosheet's melting temperature. has exhibited semiconductor behavior indirect band gap 4.025 eV. By investigating electron localization function, shows polar ionic bonds, which introduces as good candidate absorbing numerous substances like sensors. Seebeck coefficient exhibits highest peak values 359 μV/K (n-type) 305 (p-type) 300 K. ultralow lattice conductivity, approximately 0.46 W/mK confirms superior thermoelectric nanosheets. reveals significant absorption reflection ultraviolet light, highlighting potential protection. specific electronic imply that BPB-AlN may be used generation nano-optoelectronic technology design.
Language: Английский
Citations
6