Pedot:Pss-Based Electronic “Paper” with High Surface-Interface and Mechanical Strength and Ultro-Long Wet-Resistant Capacity DOI
Siying An, Ling Zhu, Yuqian Zhang

et al.

Published: Jan. 1, 2024

Language: Английский

Advancements in Optoelectronics: Harnessing the Potential of 2D Violet Phosphorus DOI
Waqas Ahmad, Aumber Abbas, Umer Younis

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: July 24, 2024

Abstract Recently, 2D violet phosphorus (VP), a new kind of allotrope has attained significant attention owing to its remarkable electronic, optical, and magnetic characteristics. Tunable, large direct bandgap, high charge carrier mobility, optical absorption make it potential candidate for realizing photoelectronic applications. VP demonstrates unique electronic structure, chemical stability, strong light‐matter interaction, thermal stability that can be utilized assembling intelligent devices. This review article provides comprehensive investigations the latest synthesis techniques employed develop including structural characterizations, degradation mechanisms. Furthermore, this diverse applications in optoelectronics, photodetectors, polarization detection, imaging systems, neuromorphic optoelectronic devices, many others. Finally, challenges future research directions associated with terms optoelectronics are discussed. Overall, as presented, offers an extensive study VP, covering synthesis, insights mechanisms, aim stimulating further development growing field.

Language: Английский

Citations

11

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In2Se3/ReS2 van der Waals Heterostructure DOI
Waqas Ahmad, Majeed Ur Rehman, Umer Younis

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 15, 2024

Abstract 2D van der Waal (vdWs) heterostructures present unique optoelectronic characteristics, making them favorable layer structures for constructing promising devices with multifunctional applications. Nevertheless, as a result of significant interface recombination the photogenerated electron‐hole pairs and presence various absorption edges within constituent layers, they are prone to experiencing low carrier collection efficiency. In this work, combined theoretical experimental investigation presented on 2 Se 3 /ReS vdWs heterostructure, aimed at developing high‐performance broadband photodetector multifunctionalities. investigations, it is observed that, by adjusting polarization states (+P −P) in layer, band alignment can be effectively tuned from type‐I type‐II, providing narrow bandgap ≈0.65 eV, which beyond that their individual constituents. As photodetector, device shows photoresponse ranging 532 1550 nm ultrahigh responsivity (99.36 AW −1 ), detectivity (3.5 × 10 13 Jones), external quantum efficiency (34195%). Additionally, competitive sensitivity across broad spectrum imagining capability heterostructure. This study demonstrates heterostructure provides technique

Language: Английский

Citations

6

Synergistic Effect of Oxygen and Water on the Environmental Reactivity of 2D Layered GeAs DOI
Luca Persichetti, Giacomo Giorgi, L. Lozzi

et al.

The Journal of Physical Chemistry C, Journal Year: 2025, Volume and Issue: 129(2), P. 1173 - 1182

Published: Jan. 6, 2025

We investigated the reactivity of layered GeAs in presence oxygen or water using synchrotron-based X-ray photoelectron spectroscopy and ab initio calculations. By performing experiments at near-ambient pressure (up to 20 mbar), we gained detailed insights into material's stability under realistic conditions. showed limited with dry O2 deaerated H2O. However, a small amount humidity (Rw = 0.5% T °C) an atmosphere significantly enhanced reactivity. This synergistic effect was well captured by density functional theory calculations, which revealed strongly exothermic formation energy for simultaneous chemisorption H2O, compared adsorption each molecule individually.

Language: Английский

Citations

0

Ultra-heat resistance and low CTE polyimides with spirobis(indene)bis(benzoxazole)-benzimidazole unite for flexible substrate applications DOI
Peng Xiao,

Xiaojie He,

Qinghua Lu

et al.

European Polymer Journal, Journal Year: 2025, Volume and Issue: unknown, P. 113923 - 113923

Published: March 1, 2025

Language: Английский

Citations

0

Europium- β diketonate based blended thin films with tunable emission: Formulation and assessment for optoelectronic devices DOI
N. Thejo Kalyani, Akhilesh Ugale, S.J. Dhoble

et al.

Journal of Molecular Structure, Journal Year: 2025, Volume and Issue: unknown, P. 142380 - 142380

Published: April 1, 2025

Language: Английский

Citations

0

Integrating Hard Silicon for High-Performance Soft Electronics via Geometry Engineering DOI Creative Commons
Lei Yan, Zongguang Liu, Junzhuan Wang

et al.

Nano-Micro Letters, Journal Year: 2025, Volume and Issue: 17(1)

Published: April 14, 2025

Abstract Soft electronics, which are designed to function under mechanical deformation (such as bending, stretching, and folding), have become essential in applications like wearable artificial skin, brain-machine interfaces. Crystalline silicon is one of the most mature reliable materials for high-performance electronics; however, its intrinsic brittleness rigidity pose challenges integrating it into soft electronics. Recent research has focused on overcoming these limitations by utilizing structural design techniques impart flexibility stretchability Si-based materials, such transforming them thin nanomembranes or nanowires. This review summarizes key strategies geometry engineering crystalline from use hard islands creating out-of-plane foldable nanofilms flexible substrates, ultimately shaping nanowires using vapor–liquid–solid in-plane solid–liquid–solid techniques. We explore latest developments electronic devices, with sensors, nanoprobes, robotics, Finally, paper discusses current field outlines future directions enable widespread adoption silicon-based

Language: Английский

Citations

0

A machine learning-quantum chemical quest to predict the photovoltaic properties of 2D molybdenum sulfide super structures DOI

Abrar U. Hassan,

Mamduh J. Aljaafreh

Optical Materials, Journal Year: 2025, Volume and Issue: 164, P. 117056 - 117056

Published: April 15, 2025

Language: Английский

Citations

0

Exploring stable 3D porous carbon for advanced optoelectronics and electrochemical performance in potassium-ion batteries DOI
Umer Younis, Fizzah Qayyum, Waqas Ahmad

et al.

Journal of Power Sources, Journal Year: 2025, Volume and Issue: 644, P. 237080 - 237080

Published: April 26, 2025

Language: Английский

Citations

0

Ion–Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications DOI
Tingting Mei, Fandi Chen,

Tianxu Huang

et al.

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: April 29, 2025

With the increasing limitations of conventional computing techniques, particularly von Neumann bottleneck, brain's seamless integration memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one most promising candidates neuromorphic computing. Meanwhile, atomic-scale thickness tunable electronic properties van der Waals two-dimensional (2D) materials enable possibility designing highly integrated, energy-efficient that closely replicate plasticity. This review comprehensively analyzes advancements in based on 2D materials, focusing electron-ion interactions both transistors memristors. The challenges material stability, scalability, device are evaluated, along with potential solutions future research directions. By highlighting these developments, this insights into advancing systems.

Language: Английский

Citations

0

PEDOT:PSS-based electronic “paper” with high surface-interface and mechanical strength and ultra-long wet-resistant capacity DOI
Ling Zhu, Yuqian Zhang, Shuai Chen

et al.

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 497, P. 154959 - 154959

Published: Aug. 23, 2024

Language: Английский

Citations

3