Crystal Growth & Design,
Journal Year:
2024,
Volume and Issue:
24(17), P. 7262 - 7270
Published: Aug. 19, 2024
The
development
of
high-speed
imaging
technology
requires
ultrafast
scintillators.
ZnO
is
an
excellent
scintillator
whose
near-band-edge
(NBE)
radiation
attenuation
can
reach
subnanosecond
levels.
Homogeneous
and
unique
double-layered
ZnO:Sc
microcrystals
(1%
doping)
were
prepared
by
adding
polyvinylpyrrolidone
during
a
hydrothermal
reaction.
growth
process
double-layer
the
effects
Sc
doping
concentration
on
morphology
studied.
tended
to
nucleate
into
twins
in
weakly
basic
hexamethylenetetramine.
c-axis
was
inhibited
doping,
pyramid
accordance
with
Burton–Cabrera–Frank
model
(002)
plane,
according
spiral
dislocation.
Sheet
obtained
under
high-concentration
doping.
After
hydrogen
annealing,
NBE
intensity
0.5%-doped
higher
than
that
ZnO,
mainly
owing
inhibition
defect
luminescence
sheet
morphology,
which
reduced
self-absorption
ZnO:Sc.
decay
time
after
annealing
ultraviolet
excitation
less
1
ns.
Combining
annealed
polydimethylsiloxane
form
flexible
composite
film
enables
scintillation
screen
be
used
for
X-ray
detection
spatial
resolution
up
16
lp/mm.
RSC Advances,
Journal Year:
2024,
Volume and Issue:
14(25), P. 17338 - 17349
Published: Jan. 1, 2024
Doping
creates
a
new
energy
level
associated
with
the
sp–d
exchange
interaction.
The
proper
S-
and
Z-scheme
heterojunction
in
presence
of
noble
metal
boost
extends
electron–hole
relaxation
time.
Nanoscale,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 1, 2025
Electromagnetic
waves
can
affect
the
human
body
and
equipment,
development
of
unique
nanostructured
materials
with
excellent
reflection
loss
(RL),
thin
thickness,
wide
frequency
band
light
weight
highly
valued.
Micro and Nano Engineering,
Journal Year:
2024,
Volume and Issue:
23, P. 100260 - 100260
Published: May 15, 2024
Zinc
oxide
(ZnO)
has
emerged
as
one
of
the
most
promising
candidates
for
mass-producing
cost-efficient
optoelectronic
devices.
This
is
primarily
because
it
can
be
synthesized
in
high-quality
nanostructures
on
a
wide
range
substrates
through
relatively
simple
chemical
methods.
However,
producing
p-type
ZnO,
regardless
chosen
method,
remains
an
open
and
controversial
issue.
In
this
work,
Li-doped
ZnO
varying
Li-cocnentration
were
produced
via
two-step
hydrothermal
growth
synthesis
in-depth
analysis
based
with
Field
Emission
Scanning
Electron
Microscopy
(FE-SEM),
X-ray
diffraction
(XRD),
Raman
Spectroscopy,
Extended
X-Ray
Absorption
Fine
Structure
(EXAFS)
temperature-dependent
Photoluminescence
(PL)
was
carried
out
effort
to
gain
insights
into
Li-incorporation
mechanisms.
The
findings
indicated
strong
interplay
between
native
defects
responsible
inherent
n-type
character
material
Li
incorporation.
It
suggested
that
hinders
successful
conversion
nanorods
when
employing
approach
essential
identify
precise
conditions
necessary
genuine
incorporation
Zn
substitutional.
