Liquid Shear Exfoliation of MoS2: Preparation, Characterization, and NO2-Sensing Properties

Nanomaterials, Journal Year: 2023, Volume and Issue: 13(18), P. 2502 - 2502

Published: Sept. 5, 2023

2D materials possess great potential to serve as gas-sensing due their large, specific surface areas and strong activities. Among this family, transition metal chalcogenide exhibit different properties are promising candidates for a wide range of applications, including sensors, photodetectors, energy conversion, storage. Herein, high-shear mixing method has been used produce multilayered MoS2 nanosheet dispersions. thin films were manufactured by vacuum-assisted filtration. The structural morphology was studied using ς-potential, UV-visible, scanning electron microscopy (SEM), atomic force (AFM), energy-dispersive X-ray spectroscopy (EDX), transmission (TEM), diffraction (XRD), Raman (RS). spectroscopic microscopic analyses confirm the formation high-crystalline film with good inter-sheet connectivity relative thickness uniformity. layer is measured be approximately 250 nm, size 120 nm ± 40 number layers between 6 9 layers. Moreover, electrical characteristics clearly showed that exhibits conductivity linear I-V curve response, indicating ohmic contact electrodes. As an example applicability, we fabricated chemiresistive sensor devices sensing layer. performance MoS2-chemiresistive NO2 assessed being exposed concentrations (1 ppm 10 ppm). This shows sensibility low 1 ppm, response time 114 s recovery 420 s. effect thin-film operating temperatures on studied. results show thinner higher NO2; decreases working temperature increases.

Language: Английский

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Solution-phase synthesis of group 3–5 transition metal chalcogenide inorganic nanomaterials

Chemical Communications, Journal Year: 2023, Volume and Issue: 59(57), P. 8779 - 8798

Published: Jan. 1, 2023

This article summarizes known routes to colloidal nanomaterials incorporating early transition metals and sulfides or selenides, including chalcogenide perovskites.

Language: Английский

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Building Bilayer MoS₂ with Versatile Morphologies via Etching‐And‐Growth Coexisting Method

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 10, 2025

Abstract The etch‐engineering is a feasible avenue to tailor the layer number and morphology of 2D layered materials during chemical vapor deposition (CVD) growth. However, less reports strengthen used in fabrication high‐quality transition metal dichalcogenide (TMD) with tunable layers desirable morphologies improve their prominent performance electronic optoelectronic devices. Here, an etching‐and‐growth coexistence method reported directly synthesize high‐quality, high‐symmetric MoS 2 bilayers versatile via CVD. growth mechanism intensively elucidated through analyzing carrier Ar perturbation associated precursor concentration variations, revealing four stages including growth‐priority, local‐etching, equilibrium etching growth, etching‐priority. as‐grown polygonal bilayer exhibits uniform characteristic, attributed formation single crystal owing limitation multigrain generation. work not only enriches understanding direct TMD materials, but also offers controllable protocol engineer shapes, which can benefit applications

Language: Английский

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Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices

Nano Express, Journal Year: 2025, Volume and Issue: 6(1), P. 015002 - 015002

Published: Jan. 13, 2025

Abstract Photodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation extraction using semiconducting thin films with appropriate optoelectronic properties. Recently, metal halide perovskites have demonstrated groundbreaking photodetector performance due to their exceptional properties originating from perovskite structure. However, toxicity stability remain challenges for large-scale applications. Inspired by the structure, intense investigation in search highly stable, non-toxic earth abundant materials superior features has led discovery chalcogenide (CPs). These unconventional semiconductors formula ABX 3 , where A B cations X is a chalcogen, which covers compounds corner sharing structures type II-IV- VI (II = Ba, Sr, Ca, Eu; IV Zr, Hf; S, Se) III 1 -III 2 -VI (III Lanthanides, Y, Sc; Se). The increased coordination ionicity these contribute excellent charge transport exceptionally high optical absorption coefficient (> 10 5 cm −1 ). present review encompasses theoretical analysis that provides electronic band orbital contributions support Furthermore, challenging film deposition, characterizations, application photodetection focusing on BaZrS -which most studied one, ascribed. Additionally, we suggest prospects can bring out true potential photovoltaics.

Language: Английский

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Recent Advancements of Niobium and Tantalum‐Based Materials: From Design Engineering to Energy Storage Applications

ChemistrySelect, Journal Year: 2025, Volume and Issue: 10(3)

Published: Jan. 1, 2025

Abstract Niobium (Nb) and tantalum (Ta), transition metals with distinct physical chemical properties, are highly attractive for applications in electrochemical energy storage (EES) devices. Their oxides, dichalcogenides, MXenes demonstrate significant potential due to effective ion‐diffusion channels high theoretical capacity. Particularly, Nb‐based dichalcogenides offer enhanced performance lithium‐ion batteries (LIBs) supercapacitors (SCs) because of their layered structure. However, the tendency Nb chalcogenides Nb‐MXene layers aggregate or restack impedes electrolyte penetration, diminishing coulombic efficiency Moreover, Nb‐ Ta‐based oxides have intrinsically low electrical conductivity a slow Li intercalation rate, challenging application To address these issues, strategies such as hierarchical structuring, heteroatom doping, development porous nanoscale forms, well composites incorporating carbon conductive polymers, been explored. This review summarizes impacts various synthesis techniques, crystal structures, morphological tunings on properties Ta materials LIBs SCs outlines future directions enhancing EES applications.

Language: Английский

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