Solution Synthesis and Diffusion-Mediated Formation Pathway of NbTe4 Particles DOI

Katherine Thompson,

Peyton L. Herring,

Mauricio Terrones

et al.

Inorganic Chemistry, Journal Year: 2024, Volume and Issue: 63(36), P. 16815 - 16823

Published: Aug. 28, 2024

NbTe4 is an important material because of its fundamental low-temperature electronic behavior and potential interest for thermoelectric, catalytic, phase-change applications, especially as nano- microscale particles. As a tellurium-rich group V transition metal telluride, bulk typically synthesized through high-temperature solid-state or flux reactions films can be made by sputtering annealing, but generally not amenable to the lower-temperature solution-based syntheses that yield small Here, we demonstrate solvothermal route particles based on mainstream colloidal nanoparticle synthesis. We find reaction proceeds in situ multistep pathway begins first forming elemental tellurium needles. then deposits surface needles diffusion-based process. Time-point studies throughout reveal crystallographic relationships between Te define how help rationalize morphology resulting synthesized, exhibit consisting predominantly Nb–Te reduced NbOx species, after storage, oxidation transforms these species primarily Nb2O5 TeO2, while remains unchanged. These synthetic capabilities insights NbTe4, using method, will advance future properties applications this related tellurides.

Language: Английский

From synthesis to application: a review of BaZrS3 chalcogenide perovskites DOI Creative Commons
Shubhanshu Agarwal, Kiruba Catherine Vincent, Rakesh Agrawal

et al.

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Chalcogenide perovskites are gaining prominence as earth-abundant and non-toxic solar absorber materials, crystallizing in a distorted perovskite structure. Among these, BaZrS3 has attracted the most attention due to its optimal bandgap ability be synthesized at relatively low temperatures. exhibits high light absorption coefficient, excellent stability under exposure air, moisture, heat, is composed of elements. These properties collectively position promising candidate for wide range applications, although traditional high-temperature synthesis primarily been significant challenge. In this review, we provide critical discussion various methods employed fabricate BaZrS3, including solid-state synthesis, nanoparticle vacuum-based well solution-based approaches synthesize thin films. We also comprehensively examine experimentally measured theoretically calculated optical, optoelectronic, electronic, defect BaZrS3. Furthermore, review highlights functional devices based on showcasing applications spanning photovoltaics, photodetection, thermoelectrics, photoelectrochemical water splitting, piezoelectricity, spintronics. Lastly, propose future roadmap maximize potential material. Additionally, extends focus BaHfS3 BaTiS3, discussing their methods, properties, explored thereby offering comparative perspective emerging family chalcogenide perovskites.

Language: Английский

Citations

2

Solution processed metal chalcogenide semiconductors for inorganic thin film photovoltaics DOI Creative Commons
Jonathan W. Turnley, Rakesh Agrawal

Chemical Communications, Journal Year: 2024, Volume and Issue: 60(40), P. 5245 - 5269

Published: Jan. 1, 2024

This article encapsulates the science and engineering that goes into solution processed solar cells, focusing on a variety of established emerging metal chalcogenide materials.

Language: Английский

Citations

11

Breaking Barriers in Chalcogenide Perovskite Synthesis: A Generalized Framework for Fabrication of BaMS3 (M═Ti, Zr, Hf) Materials DOI Creative Commons
Shubhanshu Agarwal, Kiruba Catherine Vincent, Jonathan W. Turnley

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(46)

Published: Oct. 8, 2024

Abstract Chalcogenide perovskites have garnered increasing attention as stable, non‐toxic alternatives to lead halide perovskites. However, their conventional synthesis at high temperatures (>1000 °C) has hindered widespread adoption. Recent studies developed low‐to‐moderate temperature methods (<600 using reactive precursors, yet a comprehensive understanding of the pivotal factors affecting reproducibility and repeatability remains elusive. This study delineates critical in low‐temperature BaMS 3 (M═Zr, Hf, Ti) compounds presents generalized framework. Innovative approaches are for synthesizing this framework involving organometallics solution deposition. The molecular precursor routes, employing metal acetylacetonates generate soluble metal–sulfur bonded complexes metal–organic produce metal‐thiolate, metal‐isothiocyanate, metal‐trithiocarbonate species, demonstrated yield carbon‐free . These achieved most contiguous films BaZrS BaHfS deposition date. Furthermore, hybrid processing method stacking sputter‐deposited Zr solution‐deposited BaS layers is employed synthesize contiguous, oxygen‐free film. diffuse reflectance measurements indicate direct bandgap ≈ 1.85 eV 2.1 film under investigation.

Language: Английский

Citations

8

Expanding the horizons for viable precursors and liquid fluxes for the synthesis of BaZrS3 and related compounds DOI Creative Commons
Kiruba Catherine Vincent, Shubhanshu Agarwal,

Zirui Fan

et al.

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: 12(32), P. 12521 - 12534

Published: Jan. 1, 2024

This study explores the moderate-temperature synthesis of BaMS 3 (M = Ti, Zr, Hf) chalcogenide perovskites utilizing metal chlorides and precursors introduces a novel selenium liquid flux.

Language: Английский

Citations

6

Moderate temperature sulfurization and selenization of highly stable metal oxides: an opportunity for chalcogenide perovskites DOI
Shubhanshu Agarwal, Jonathan W. Turnley, Apurva A. Pradhan

et al.

Journal of Materials Chemistry C, Journal Year: 2023, Volume and Issue: 11(45), P. 15817 - 15823

Published: Jan. 1, 2023

We report the conversion of BaZrO 3 into BaZrS at temperatures below 600 °C, enabled by a thermodynamics-guided redesigned sulfurization process.

Language: Английский

Citations

10

Emissive Chalcogenide Perovskite Nanowires DOI
Yuxin Jiang, Han K. D. Le, Lior Verbitsky

et al.

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Efficient and stable one-dimensional semiconductor nanowires are critical for the development of next-generation on-chip optoelectronics. Here, we report a synthetic approach to produce high-quality based on chalcogenide perovskite via vapor phase reaction inside sealed ampule. An epitaxial vapor-phase growth mechanism is proposed. The shown be single crystalline highly structurally stable, with preferential along [010] direction. Red green photoluminescence (PL) observed from BaZrS3 SrHfS3 nanowires, respectively, emission tunable varying compositions. PL lifetime measured by fitting decay curve biexponential model. longer radiative recombination component time scale nanoseconds, indicating good nanowire sample quality promising potential optoelectronic applications.

Language: Английский

Citations

0

Solution-phase synthesis of alloyed Ba(Zr1−xTix)S3 perovskite and non-perovskite nanomaterials DOI

Daniel Zilevu,

Kennedi Miller,

Naira Arrykova

et al.

Nanoscale, Journal Year: 2024, Volume and Issue: 16(36), P. 17126 - 17140

Published: Jan. 1, 2024

Chalcogenide perovskites, especially BaZrS

Citations

3

A Reliable, Colloidal Synthesis Method of the Orthorhombic Chalcogenide Perovskite, BaZrS3, and Related ABS3 Nanomaterials (A = Sr, Ba; B = Ti, Zr, Hf): A Step Forward for Earth-Abundant, Functional Materials DOI Creative Commons
Daniel C. Hayes, Shubhanshu Agarwal, Kiruba Catherine Vincent

et al.

Chemical Science, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 11, 2024

Chalcogenide perovskites have become of interest for their increased stability, compared to halide counterparts, and potential optoelectronic properties. A reliable colloidal method is presented here BaZrS 3 related ABS nanomaterials.

Language: Английский

Citations

2

EPR spin trapping of nucleophilic and radical reactions at colloidal metal chalcogenide quantum dot surfaces DOI Creative Commons
Caroline J. Aschendorf, Mawuli Degbevi, Keaton V. Prather

et al.

Chemical Science, Journal Year: 2023, Volume and Issue: 14(45), P. 13080 - 13089

Published: Jan. 1, 2023

EPR spectroscopy is used to interrogate nucleophilic and radical reactions at colloidal metal chalcogenide quantum dot surfaces via thermal or photochemical formation of surface-bound nitroxide radicals from spin trap molecules.

Language: Английский

Citations

4

Solution Synthesis and Diffusion-Mediated Formation Pathway of NbTe4 Particles DOI

Katherine Thompson,

Peyton L. Herring,

Mauricio Terrones

et al.

Inorganic Chemistry, Journal Year: 2024, Volume and Issue: 63(36), P. 16815 - 16823

Published: Aug. 28, 2024

NbTe4 is an important material because of its fundamental low-temperature electronic behavior and potential interest for thermoelectric, catalytic, phase-change applications, especially as nano- microscale particles. As a tellurium-rich group V transition metal telluride, bulk typically synthesized through high-temperature solid-state or flux reactions films can be made by sputtering annealing, but generally not amenable to the lower-temperature solution-based syntheses that yield small Here, we demonstrate solvothermal route particles based on mainstream colloidal nanoparticle synthesis. We find reaction proceeds in situ multistep pathway begins first forming elemental tellurium needles. then deposits surface needles diffusion-based process. Time-point studies throughout reveal crystallographic relationships between Te define how help rationalize morphology resulting synthesized, exhibit consisting predominantly Nb–Te reduced NbOx species, after storage, oxidation transforms these species primarily Nb2O5 TeO2, while remains unchanged. These synthetic capabilities insights NbTe4, using method, will advance future properties applications this related tellurides.

Language: Английский

Citations

0