Two-Dimensional Ferroelectrics: A Review on Applications and Devices

Solids, Journal Year: 2024, Volume and Issue: 5(1), P. 45 - 65

Published: Jan. 16, 2024

Over the last few years, research activities have seen two-dimensional (2D) materials become protagonists in field of nanotechnology. In particular, 2D characterized by ferroelectric properties are extremely interesting, as they better suited for development miniaturized and high-performing devices. Here, we summarize recent advances this field, reviewing realization devices based on materials, like FeFET, FTJ, optoelectronics. The realized with a wide range material systems, from oxide at low dimensions to exhibiting van der Waals interactions. We conclude presenting how these could be useful magnons or surface acoustic waves.

Language: Английский

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Strong Electrostatic Control of Excitonic Features in MoS₂ by a Free‐Standing Ultrahigh‐κ Ferroelectric Perovskite

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 5, 2024

Abstract Integrating free‐standing complex oxides with two‐dimensional (2D) materials has recently attracted great interest, due to the rich physics evolving from such structures. Enhancing and tuning opto–electronic properties of these systems is high importance for a multitude applications, as sensors, memory devices or optical communications. The electrostatic control photoluminescence monolayer MoS 2 at room temperature via integration BaTiO 3 (BTO), ferroelectric perovskite oxide presented. It shown that use BTO leads highly tunable exciton emission in minimal range gate voltages. Due BTO's polarization‐induced doping, large peak shifts well A trion binding energy 40–100 meV are observed. These measurements compared those carried out when replaced by hexagonal boron nitride (hBN) dielectric layer, confirming superior gating thus lower power consumption. Additionally, advantage switching taken fabricating where layer decoupled electrode SiO layer. Choosing isolate allows induce remanent behavior ’s excitonic features.

Language: Английский

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Electrode Effect on Ferroelectricity in Free-Standing Membranes of PbZr_0.2Ti_0.8O₃

ACS Nanoscience Au, Journal Year: 2023, Volume and Issue: 3(6), P. 482 - 490

Published: Oct. 20, 2023

We report the effects of screening capacity, surface roughness, and interfacial epitaxy bottom electrodes on polarization switching, domain wall (DW) ferroelectric Curie temperature (TC) PbZr0.2Ti0.8O3 (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT PZT/La0.67Sr0.33MnO3 (LSMO) membranes are prepared Au, correlated oxide LSMO, two-dimensional (2D) semiconductor MoS2 base layers. Switching yields nonvolatile current modulation in channel at room temperature, with an on/off ratio up to 2 × 105 no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that coercive field Ec varies from 0.75 3.0 MV cm-1 different layers exhibits strong asymmetry. The PZT/LSMO exhibit significantly smaller Ec, samples transferred LSMO showing symmetric about -0.26/+0.28 cm-1, epitaxial films. DW roughness exponent ζ points 2D random bond disorder dominated roughening (ζ = 0.31) temperature. Upon thermal quench progressively higher temperatures, values Au approach theoretical value 1D 2/3), while 1/2). TC 763 ± 12, 725 25, 588 12 °C, respectively, well exceeding bulk value. Our study reveals complex interplay between electrostatic mechanical boundary conditions determining ferroelectricity membranes, providing important material parameters functional design PZT-based flexible nanoelectronics.

Language: Английский

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Biodegradable albumen dielectrics for high-mobility MoS2 phototransistors

npj 2D Materials and Applications, Journal Year: 2023, Volume and Issue: 7(1)

Published: Nov. 3, 2023

Abstract This work demonstrates the fabrication and characterization of single-layer MoS 2 field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing an insulator for high carrier mobilities (up to ~90 cm V −1 s ) are observed, which is remarkably superior that obtained with commonly used SiO dielectric we attribute ionic gating due formation electric double layer in interface. In addition, investigated devices characterized upon illumination, observing responsivities 4.5 AW (operated photogating regime) rise times low 52 ms photoconductivity regime). The presented study reveals combination van der Waals materials prospective biocompatible optoelectronic device applications. Furthermore, demonstrated universal process can be easily adopted fabricate albumen-based any other material.

Language: Английский

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Anisotropic behavior of mechanical properties for the a- and c-domains in a (001) BaTiO₃ single crystal

Journal of Physics Condensed Matter, Journal Year: 2023, Volume and Issue: 35(35), P. 355703 - 355703

Published: May 30, 2023

Barium titanate (BaTiO3) single crystal with a tetragonal phase was characterized by nanoindentation. Elastic and elastic-plastic deformation regimes were obtained. The main objective the evaluation of anisotropic behavior related to mechanical properties associated cross-section ferroelectrica- andc-domains (In-plane out-of-plane) in (001) configuration domains. This evaluated along line perpendicular between domains, which demonstrated that BaTiO3single depend on distance from due effect influence neighbor domain. A three-dimensional (3D) finite element (FE) model developed simulate effects revealed nanoindentations test. FE simulation there is no simple isotropic domain type. Numerical simulations experiments performed study ferroelastic switching domains BaTiO3crystals interaction 90°-cadomain indentation position.

Language: Английский

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