A review on anodes for sodium-ion batteries: carbon-coated SnS and beyond DOI

Xiao-hui Le,

Di Wu,

Han-qiu Zeng

et al.

Fullerenes Nanotubes and Carbon Nanostructures, Journal Year: 2024, Volume and Issue: unknown, P. 1 - 22

Published: Oct. 1, 2024

Language: Английский

Engineering the transition metal hydroxide–photoanode interface with a highly crystalline mediator for efficient photoelectrochemical water splitting DOI
Meihua Li, Saqib Mujtaba, L. Xu

et al.

Journal of Materials Chemistry A, Journal Year: 2024, Volume and Issue: 12(30), P. 19259 - 19267

Published: Jan. 1, 2024

A one-stone-two-birds strategy was developed to engineer the SC/TMH/electrolyte interface by introducing high crystallinity Fe(OH) X -H, and optimized BV/Fe(OH) -H/FeNi(OH) exhibited a noteworthy photocurrent density of 5.34 mA cm −2 .

Language: Английский

Citations

4

Phonon vibrational and transport properties of SnSe/SnS superlattice at finite temperatures DOI

Feng-ning Xue,

Wei Li, Zi Li

et al.

Physical review. B./Physical review. B, Journal Year: 2025, Volume and Issue: 111(14)

Published: April 28, 2025

Language: Английский

Citations

0

Pressure- and temperature-induced phase transition in the semiconductor SnS DOI
Yuyang Shi, Min Wu, Kai Wang

et al.

Physical review. B./Physical review. B, Journal Year: 2025, Volume and Issue: 111(17)

Published: May 14, 2025

Language: Английский

Citations

0

Pressure-induced metallization and enhanced photoelectric activity in layered tin disulfide DOI Open Access
Yuyang Shi, Min Wu, Lei Yue

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 124(9)

Published: Feb. 26, 2024

Two-dimensional layered metal dichalcogenides have given rise to considerable interest in electronics and optoelectronics fields because of their excellent physical chemical properties promising applications. Tin disulfide (SnS2) is an important member them due its environment-friendly resource-rich characteristics. Here, a series situ electrical transport experiments photocurrent measurements under high pressure been performed investigate the opto-electrical 4H-SnS2. With increasing pressure, resistivity 4H-SnS2 decrease significantly, leading transition from semiconducting metallic state above 58.6 GPa. The increase results substantial enhancement photoelectric activity, indicating extensive potential utilizing as trigger for optoelectronic Combined with our previous x-ray diffraction optical absorption at pressure-induced structural distortion, bandgap narrowing, metallization, activity are tunable reversible, which great significance both fundamental research device design.

Language: Английский

Citations

3

Adsorption Mechanisms of TM3 (TM = Mo, Ru, Au)-Decorated Tin Sulfide Monolayers for the Decomposition of Gas Components under Fault Conditions in Oil-Immersed Transformers DOI Creative Commons
Min Li, Bo Wang, Hengrui Ma

et al.

Molecules, Journal Year: 2024, Volume and Issue: 29(5), P. 934 - 934

Published: Feb. 21, 2024

Oil-immersed transformers play a pivotal role owing to their environmentally friendly characteristics, compact footprint, and cost-effectiveness. Ensuring the online monitoring of oil-immersed is fundamental measure ensure secure stable operation modern power systems. In this paper, metal particle cluster-doped SnS firstly used in adsorption sensing decomposition components (CO, C2H2) under fault conditions transformers. The study comprehensively analyzed band structure, differential charge density, density states, molecular orbital theory unveil mechanisms target gases. findings suggest that modification clusters can enhance surface electronic properties single-layer SnS. regions gas–surface reaction area, activity significantly heightened, primarily attributed contribution d-orbital electrons cluster structures. modified exhibits capacity following order: Ru3-SnS > Mo3-SnS Au3-SnS. Additionally, material demonstrates increased competitiveness for C2H2, with types falling physical chemistry adsorption. Different elements exert diverse effects on distribution entire system, providing theoretical foundation preparation corresponding sensors. work offer numerical insights further development nanosensors, concurrently shedding light faults

Language: Английский

Citations

1

Water-Based Bi2S3 Nano-Inks Obtained with Surfactant-Assisted Liquid Phase Exfoliation and Their Direct Processing into Thin Films DOI Creative Commons

Micaela Pozzati,

Felix Boll,

Matteo Crisci

et al.

Colloids and Interfaces, Journal Year: 2024, Volume and Issue: 8(3), P. 28 - 28

Published: April 30, 2024

Bi2S3 has gained considerable attention as a semiconductor for its versatile functional properties, finding application across various fields, and liquid phase exfoliation (LPE) serves straightforward method to produce it in nano-form. Till now, the commonly used solvent LPE been N-Methyl-2-pyrrolidone, which is expensive, toxic high boiling point. These limitations drive search more sustainable alternatives, with water being promising option. Nonetheless, surfactants are necessary due hydrophobic nature of Bi2S3, organic molecules amphoteric characteristics identified suitable surfactants. However, systematic studies on use ionic have remained scarce until now. In this work, we sodium dodecyl sulfate (SDS), dodecylbenzene sulfonate (SDBS) hexadecyl (SHS) representative species present comprehensive investigation into their effects Bi2S3. Through characterizations resulting products, find that all effectively exfoliate few-layer species. Notably, SDBS demonstrates superior stabilization 2D layers compared other surfactants, while SHS becomes most surfactant obtaining products yield. Moreover, nano-inks fabricating films using spray-coating, reaching fine tuning band gap by controlling number cycles, paving way utilization optoelectronic devices.

Language: Английский

Citations

1

Phase transition and metallization of semiconductor GeSe at high pressure DOI
Yuhua Luo,

Min Wu,

Ye Wu

et al.

Journal of Physics Condensed Matter, Journal Year: 2024, Volume and Issue: 37(5), P. 055401 - 055401

Published: Nov. 5, 2024

Over the past few decades, semiconductor materials of group IV-VI monochalcogenides have attracted considerable interest from researchers due to their rich structural characteristics and excellent physical properties. Among them, GeS, GeSe, SnS, SnSe crystallize in an orthorhombic structure (

Language: Английский

Citations

1

A review on anodes for sodium-ion batteries: carbon-coated SnS and beyond DOI

Xiao-hui Le,

Di Wu,

Han-qiu Zeng

et al.

Fullerenes Nanotubes and Carbon Nanostructures, Journal Year: 2024, Volume and Issue: unknown, P. 1 - 22

Published: Oct. 1, 2024

Language: Английский

Citations

0