A review of chalcogenide-based perovskites as the next novel materials: Solar cell and optoelectronic applications, catalysis and future perspectives

Next Nanotechnology, Journal Year: 2024, Volume and Issue: 7, P. 100102 - 100102

Published: Sept. 11, 2024

Language: Английский

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Neuromorphic Nanoionics for Human–Machine Interaction: From Materials to Applications

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(37)

Published: Feb. 29, 2024

Abstract Human–machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion extended into various emerging domains, including human healthcare, machine perception, biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted nanoionic devices that emulate operations architecture of brain, emerged as powerful tool highly efficient information processing. This paper delivers comprehensive review developments device‐based neuromorphic computing technologies their pivotal role shaping next‐generation HMI. Through detailed examination fundamental mechanisms behaviors, explores ability memristors ion‐gated transistors to intricate functions neurons synapses. Crucial performance metrics, such reliability, energy efficiency, flexibility, biocompatibility, are rigorously evaluated. Potential applications, challenges, opportunities using HMI technologies, discussed outlooked, shedding light on fusion with

Language: Английский

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Electrochemical synthesis and functional analysis of self-assembled Au-decorated polypyrrole for non-volatile memory and bio-inspired computing

Organic Electronics, Journal Year: 2024, Volume and Issue: 127, P. 107013 - 107013

Published: Feb. 9, 2024

Language: Английский

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Electrochemical anodic oxidation assisted fabrication of memristors

International Journal of Extreme Manufacturing, Journal Year: 2024, Volume and Issue: 6(3), P. 032008 - 032008

Published: Feb. 22, 2024

Highlights A low-cost, efficient and convenient anodic oxidation assisted fabrication of memristors is introduced. The process device performance anodizing various forms are demonstrated. characteristics issues the for memory resistors summarised analysed.

Language: Английский

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Reliable Resistive Switching and Multifunctional Synaptic Behavior in ZnO/NiO Nanocomposite Based Memristors for Neuromorphic Computing

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: 7(1), P. 73 - 85

Published: Dec. 16, 2024

Neuromorphic devices with extremely low energy consumption are greatly demanded for brain-like computing and artificial intelligence (AI). In this work, the ZnO–NiO nanocomposite as an active layer used to create synaptic memristor memory functions, including high ON/OFF ratios, stable filamentary resistive switching behavior, long-term/short-term plasticity (LTP/STP), learning-experience response. These qualities closely resemble biological learning activities. Controlled production rupture of Ag filaments result in a ratio ∼103, making them ideal nonvolatile demands. Before electroforming, progressive conductance modulation Ag/ZnO/NiO/Pt/Ti/SiO2 may be observed, working mechanism described by subsequent development contraction induced redox reaction. Furthermore, memristors demonstrated exponential decay curve 2.26 μs time constant neural network (ANN) outstanding identification accuracy 90.7% handwritten digits. This work suggests that proposed (with mutifuntional responses) might enable efficient neuromorphic designs.

Language: Английский

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Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

RSC Advances, Journal Year: 2023, Volume and Issue: 13(38), P. 26330 - 26343

Published: Jan. 1, 2023

Dynamic transition of resistive memory behaviour from volatile threshold switching to non-volatile WORM memory.

Language: Английский

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Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: 6(6), P. 4548 - 4559

Published: June 6, 2024

Bioinspired neuromorphic computing (NC) is attracting significant research interest due to the imitation of human brain functioning in electronic devices. The current study describes a flexible Cu/V2O5/NiMnIn-based memory device fabricated using direct (DC) magnetron sputtering technique on Ni substrate. It manifests simultaneous existence analog and abrupt switching characteristics, making it promising for applications. behavior explained through proposed analytical model. In resistive switching, displays reasonably high OFF/ON resistance ratio (∼4.1 × 103), endurance (∼5000 cycles), data retention time (∼4500 s). tunability has been investigated by studying influence external stimuli, such as temperature magnetic field anisotropy, SET voltage. realization long-term potentiation (LTP) depression (LTD) synaptic functions demonstrates nonlinear asymmetric features device. effect LTP, LTD, window thoroughly investigated. strain generated NiMnIn layer during first-order martensite transformation aids tuning LTP LTD negative positive piezomagnetic coefficients lead magnetization-graded ferromagnetic assembly enhance linearity LTD. Additionally, exhibits outstanding flexibility. work opens up new possibilities upcoming

Language: Английский

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Multibit, Lead‐Free Cs₂SnI₆ Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

Advanced Functional Materials, Journal Year: 2023, Volume and Issue: 34(16)

Published: Dec. 28, 2023

Abstract In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐volatile memory based on emerging materials can be a promising avenue for introducing novel functionalities. This study underscores viability lead‐free, air‐stable Cs 2 SnI 6 (CSI) resistive random access (RRAM) devices as synaptic weights in architectures, specifically BNNs applications. Herein, hydrothermally synthesized CSI perovskites are explored layer RRAM either rigid or flexible substrate, highlighting reproducible multibit switching self‐compliance, low‐ resistance‐state (LRS) variations, decent On/Off ratio(or retention) ≈10 3 (or 10 4 s), and endurance exceeding 300 cycles. Moreover, comprehensive evaluation 32 × RGB CIFAR‐10 dataset reveals that binary convolutional neural networks (BCNN) trained solely weight values achieve competitive rates accuracy comparable to those their analog counterparts. These findings highlight dominance LRS self‐compliance weighted configuration minimal influence high resistance state despite substantial fluctuations under varying bending radii. With its unique electrical capabilities, is highly anticipated emerge candidate embedded AI systems, especially IoT wearables.

Language: Английский

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Solution-based in situ deposition of Sb₂S₃ from a single source precursor for resistive random-access memory devices

Materials Advances, Journal Year: 2023, Volume and Issue: 4(18), P. 4119 - 4128

Published: Jan. 1, 2023

A one-step, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb 2 S 3 on FTO using [Sb{S P{O(Pr) } ] precursor. The Ag/Sb /FTO device demonstrated low operating voltage excellent resistive switching characteristics.

Language: Английский

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A Low-Voltage Solution-Processed Organic Small Molecule Memristor Based on TIPS Pentacene

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 7, 2025

Organic small molecule-based memristors offer the advantage of low-cost, large-area fabrication. Despite this advantage, uncertainty in electrical switching mechanisms and device reproducibility coupled with stability issues different operating environments impede further development these organic memory devices. Moreover, potential barrier height at interface between electrode active material is crucial controlling charge dynamics. In report, an environmentally stable, solution-processed, molecule 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS Pentacene)-based memristor has been fabricated two top electrodes Au Ag. Ag as a shown characteristics bipolar nonvolatile low set voltage around 0.5 V. Besides lower voltage, exhibits high retention (>104 s) good ON/OFF ratio. contrast, devices showed no resistive behavior. The mechanism also investigated, it found to be governed by trapping/detrapping conjunction trap-controlled space-charge-limited-conduction model. finding supported capacitance measurements on device. These results indicate strong solution-processed TIPS Pentacene for non-volatile applications pave way power consumption data storage electronics.

Language: Английский

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