Machine Learning for Optical Anisotropy Identification of Few-Layer Black Phosphorus Based on Polarized Microscopic Images DOI
Zhihong Hu, Wei Chen, Hui Qiao

et al.

ACS Applied Nano Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 15, 2024

Black phosphorus (BP) is a layered orthorhombic crystal with uniquely arranged atoms forming crumpled honeycomb lattice. This special atomic arrangement gives BP unique optical anisotropy, which expected to be widely used in polarized optics. However, conventional image analysis study its anisotropy complex and inefficient. paper proposed machine-learning-based approach conveniently identify black phosphorus's features. Red–green–blue (RGB) values were extracted from regions of interest (ROI) consistent thickness by the detection algorithm, then data processed obtain sample eigenvalue set. Variations RGB directly reflect changes ability light. was converted grayscale, it found that they both change periodically rotation angle. Subsequently, redundant eliminated meticulously assessing feature importance, reducing generalization errors. The performance models evaluated terms accuracy, recall, F1_Score, area under receiver operating characteristic curve (AUC-ROC), all consistently above 0.9. Machine learning algorithmic can accurately classify images different angles features BP. algorithms automatically learn improve algorithms, bolstering problem-solving efficiency precision. minimizes human material resource waste experimental errors, fostering interdisciplinary synergy between materials science artificial intelligence.

Language: Английский

Highly Flexible Van der Waals Thin Films from Direct Hetero-Epitaxial Growth DOI
Kuan‐Hung Chen,

Chen-Wei Hsiang,

Yu‐Cheng Yeh

et al.

Materials Today Nano, Journal Year: 2025, Volume and Issue: 29, P. 100598 - 100598

Published: Feb. 24, 2025

Language: Английский

Citations

0
2D Van Der Waals Ferroelectric Materials and Devices for Neuromorphic Computing DOI Open Access

Zhixing Wen,

Jiangang Chen, Qirui Zhang

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: March 24, 2025

Abstract 2D van der Waals (vdW) ferroelectric materials are emerging as transformative components in modern electronics and neuromorphic computing. The atomic‐scale thickness, coupled with robust properties seamless integration into vdW engineering, offers unprecedented opportunities for the development of high‐performance low‐power devices. Notably, devices excel enabling multistate storage functionalities emulating synapses or retinas, positioning them prime candidates next‐generation in‐sensor‐and‐memory units. Despite ongoing challenges such scalability, material stability, uniformity, rapid interdisciplinary advancements advancing nanofabrication processes driving field forward. This review delves fundamental principles ferroelectricity, highlights typical materials, examines key device structures along their applications non‐von Neumann architecture By providing an in‐depth overview, this work underscores potential to revolutionize future electronics.

Language: Английский

Citations

0
Photodetectors based on two-dimensional materials/ferroelectrics hybrid system: Physics, structures, and applications DOI
Qian Huang, Chen Ma, Nan Wang

et al.

Materials Science and Engineering R Reports, Journal Year: 2025, Volume and Issue: 164, P. 100986 - 100986

Published: April 6, 2025

Language: Английский

Citations

0
Polarization-controllable interface charge transfer and photovoltaic properties in CuInP2S6/AsSBr heterostructures DOI

Ziqing Huang,

Huakai Xu,

Xingyuan Chen

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(14)

Published: April 1, 2025

Understanding charge behaviors at the interface of 2D van der Waals ferroelectric heterostructures is one important problems in fundamental physics and key for designing high-performance optoelectronic devices. Herein, we develop an analytical model to study separation migration CuInP2S6/AsSBr (CIPS/ASB) heterostructures. We reveal influence polarization reversal on photovoltaic phenomenon using tunable transport properties by modulating band alignment built-in electric field. The results that interfacial electron mobility arises two orders magnitude with from up down ward, which leads short circuit current power conversion efficiency (PCE) enhanced times. Moreover, find thickness CIPS roughness play role determining as well, suggest optimal PCE can be obtained ∼15 nm CIPS. Our method provides a general approach deal offers guidance improving performances ferroelectric-based nanodevices.

Language: Английский

Citations

0
2D Reconfigurable Memory for Integrated Optical Sensing and Multifunctional Image Processing DOI
Jie Cheng,

Xinyu Ouyang,

Xin Tang

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: April 16, 2025

Recently, the growing demand for data-centric applications has significantly accelerated progress to overcome "memory wall" caused by separation of image sensing, memory, and computing units. However, despite advancements in novel devices driving development in-sensor paradigm, achieving seamless integration optical storage, processing within a single device remains challenging. This study demonstrates an architecture using ferroelectric-defined reconfigurable α-In2Se3 phototransistor. The three polarization states exhibit linear distinguishable photoresponse, with maximum photoresponse current difference 2.17 × 10-6 A retention time exceeding 500 s. nonvolatile weight synaptic properties are programmed external electrical stimulation, enabling 112 distinct conductance nonlinearity 0.12. Additionally, supports efficient writing, erasing, optoelectronic logic, decoding via combined control. In-sensor computation edge detection is simulated embedding Prewitt convolution kernel into 3 array. integrated structure array design highlight strong potential 2D ferroelectric semiconductors computing, providing promising platform next-generation multifunctional artificial vision systems.

Language: Английский

Citations

0
Electronic Transport and Interface Properties of FeOCl-type Monolayer SnNCl for Flexible Nanodevices DOI
Yuehua Xu, He Sun

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 106524 - 106524

Published: April 1, 2025

Language: Английский

Citations

0
Multistate Polarization and Enhanced Nonreciprocal Transport in Two-Dimensional van der Waals Ferroelectric Heterostructures DOI
Erqing Wang, Mingxiang Pan,

Yuxiao Chen

et al.

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: May 1, 2025

Achieving multiple switchable polarization states at the nanoscale is crucial to high-density nonvolatile multistate memory beyond bistable ferroelectric architectures. Here, we propose a novel strategy realize and enhance nonreciprocal transport in two-dimensional (2D) van der Waals heterostructures. By integrating two distinct 2D materials with substantial spontaneous polarizations, demonstrate that Bi/SnTe heterostructure can support up eight states. Our first-principles analysis of transforming paths corresponding energy barriers reveals these be mutually switched by applying external electric fields, facilitated combination intralayer polar distortion interlayer sliding. Moreover, exhibits significantly enhanced nonlinear Hall kinetic magnetoelectric effects, closely correlated in-plane persistent out-of-plane polarization. These findings open new possibilities for designing advanced devices transport, offering pathway toward next-generation nanoelectronics.

Language: Английский

Citations

0
Efficient n- and p-Type Molecular Dopings in Large-Scale Monolayer Dichalcogenides for High-Performance Field-Effect Transistors DOI
Ye Seul Jung, Ji Yeon Kim,

Wenhu Shen

et al.

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: May 2, 2025

Doping engineering has been actively investigated for two-dimensional (2D) transition metal dichalcogenides (TMDs) to enhance their electrical behavior, particularly use in field-effect transistors (FETs). Here, we propose unprecedented redox-active n-type and p-type dopants, naphthalene WCl6, respectively, large-scale monolayer MoS2 films synthesized via low-pressure chemical vapor deposition using a Na2S promoter. These molecular dopants were selected based on high redox potentials versus the reference ferrocene, which facilitated ionization of charge transfer. Along with suppression effect sulfur vacancies monolayer, electronic transport behavior exhibits an ultrahigh electron mobility 331.7 cm2 V-1 s-1 n-doped FET excellent hole 31.8 on/off ratio ∼107 FET, all are record-setting values among those reported chemically doped TMD-based FETs. The modulation dopant concentration its correlation transistor performance mainly demonstrated, along adjusted band structures as potential origin exceptional outcomes. extended exploration multiple devices within single film demonstrated uniform characteristics.

Language: Английский

Citations

0
Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications DOI
Jialong Qi,

Huizhen Han,

Shu‐Li Yang

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(4)

Published: July 22, 2024

Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the design stage, it is essential to consider compatibility between 2D three-dimensional (3D) metal. However, interface them introduces complex interactions that could impact device's performance. this work, based on first-principles method, we simulate several 3D metal–2D material contact systems by utilizing different metals with monolayer CuInP2S6 (CIPS). By calculating electronic structures of systems, find Cd(001)–CIPS configuration most stable structure, followed Ag(111)–CIPS Au(111)–CIPS systems. Both undergo a transition from Schottky Ohmic contact. Finally, theoretically tunnel junction (FTJ) system, achieving tunneling electroresistance ratio 2.394×105% remarkably low resistance–area product 0.78 Ω·μm2, which makes proposed FTJ superior conventional FTJ. This work provides some insights storage devices.

Language: Английский

Citations

1
Boolean Computation in Single‐Transistor Neuron DOI Open Access
Hanxi Li, Jiayang Hu,

Yishu Zhang

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 15, 2024

Brain neurons exhibit far more sophisticated and powerful information-processing capabilities than the simple integrators commonly modeled in neuromorphic computing. A biological neuron can fact efficiently perform Boolean algebra, including linear nonseparable operations. Traditional logic circuits require a dozen transistors combined as NOT, AND, OR gates to implement XOR. Lacking competency, artificial neural networks multilayered solutions exercise XOR operation. Here, it is shown that single-transistor neuron, harnessing intrinsic ambipolarity of graphene ionic filamentary dynamics, enable situ reconfigurable multiple operations from separable an ultra-compact design. By leveraging spatiotemporal integration inputs, bio-realistic spiking-dependent computation fully realized, rivaling efficiency human brain. Furthermore, soft-XOR-based network via algorithm-hardware co-design, showcasing substantial performance improvement, demonstrated. These results demonstrate how form single transistor, may function platform for findings are anticipated be starting point implementing computations at individual transistor level, leading super-scalable resource-efficient brain-inspired information processing.

Language: Английский

Citations

1