Physical Review Applied, Journal Year: 2025, Volume and Issue: 23(5)
Published: May 6, 2025
Language: Английский
Chemical Reviews, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 2, 2025
Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.
Language: Английский
Citations
5
ACS Nano, Journal Year: 2024, Volume and Issue: unknown
Published: Sept. 26, 2024
Increasing the demand for object motion detection (OMD) requires shifts of reducing redundancy, heightened power efficiency, and precise programming capabilities to ensure consistency accuracy. Drawing inspiration from motion-sensitive ganglion cells, we propose an OMD vision sensor with a simple device structure WSe
Language: Английский
Citations
11
Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(30)
Published: March 21, 2024
Abstract Low‐power and parallel processing Neuromorphic computing that imitates on the human brain's extraordinary data learning capabilities is promising in non‐von Neumann application platforms post‐Moore era. Ferroelectric domain walls appearing as nanoscale topological defects solids exhibit coexisting ordering parameters besides spontaneous polarization, leading to emergence of rich physics electronic effects development neuromorphic electronics go beyond conventional CMOS. In this study, four‐state wall memory developed LiNbO 3 ferroelectric thin films integrated with Si substrates, where each state can be stably manipulated at a specific low voltage, showcasing outstanding fatigue resistance retention performance. The constructed crossbar array functions kernel for image convolution used implement operations like filtering, sharpness enhancement, edge detection. Additional simulation from convolutional neural network model shows 96.98% accuracy Modified National Institute Standards Technology handwritten digits dataset. stable multi‐state provides new approach promotes research meet future enormous demands big data.
Language: Английский
Citations
10
Nano-Micro Letters, Journal Year: 2024, Volume and Issue: 16(1)
Published: Aug. 9, 2024
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring dimension and performance limits transistors based on TMDs has gained substantial importance. review provides a comprehensive investigation into these single 2D-TMD transistor. It delves impacts miniaturization, including reduction channel length, gate source/drain contact dielectric thickness transistor operation performance. In addition, this detailed analysis parameters such as resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, development p-type logic transistors. details two logical expressions transistor, current voltage. also emphasizes role TMD-based memory devices, focusing enhancing speed, endurance, data retention, extinction well reducing energy consumption functioning artificial synapses. demonstrates calculating methods dynamic synaptic devices. not only summarizes state art field but highlights potential future research directions applications. underscores anticipated challenges, opportunities, solutions navigating boundaries
Language: Английский
Citations
8
Nano Letters, Journal Year: 2024, Volume and Issue: 24(35), P. 11132 - 11139
Published: Aug. 27, 2024
Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs logic remains challenging. Here, by using density functional theory combined with nonequilibrium Green's function method, we a 5 nm split-gate FET based on monolayer WSe
Language: Английский
Citations
8
Advanced Materials, Journal Year: 2024, Volume and Issue: unknown
Published: Oct. 29, 2024
The rapid development of visual neuromorphic hardware can be attributed to their ability capture, store and process optical signals from the environment. main limitation existing is that realization complex functions premised on increase manufacturing cost, volume energy consumption. In this study, we demonstrated an synaptic device based a three-terminal van der Waals (vdW) heterojunction realize sensing light wavelength intensity as well short-term long-term plasticity. image recognition task, constructed reservoir neural network (ORNN) visible communication system (VLC) composed device. ORNN has rate up 84.9% for 50 000 color images in 10 categories CIFAR-10 dataset, VLC achieve high-speed transmission with ultra-low power consumption only 0.4 nW. This work shows through reasonable design, vdW structures have great application potential low-power multifunctional fusion tasks such bionics.
Language: Английский
Citations
8
ACS Nano, Journal Year: 2024, Volume and Issue: 18(17), P. 11404 - 11415
Published: April 17, 2024
High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching consisting vertically stacked junction metal–insulator–semiconductor (MIS) gate structure, named J-MISFET. It shows excellent performances (<0.5 V), drain current ON/OFF ratio (∼4.7 × 105), negligible hysteresis window mV), near-ideal subthreshold slope (SS) (60 mV/dec), making it suitable for low-power operation. Furthermore, investigated switchable NAND/NOR logic operations photoresponse characteristics J-MISFET under small supply (0.5 V). To advance applications further, successfully demonstrated an optoelectronic security system comprising 2-electric inputs (for encrypted data) 1-photonic input signal password key) as hardware data protection. Thus, believe that our J-MISFET, with its heterogeneous structures, will illuminate path toward configurations next-generation electronics multifunctional systems data-driven society.
Language: Английский
Citations
7
Current Opinion in Solid State and Materials Science, Journal Year: 2024, Volume and Issue: 32, P. 101178 - 101178
Published: July 30, 2024
Language: Английский
Citations
7
Applied Physics Reviews, Journal Year: 2025, Volume and Issue: 12(1)
Published: Jan. 22, 2025
In response to the challenges posed by traditional computing architectures in handling big data and AI demands, neuromorphic has emerged as a promising alternative inspired brain's efficiency. This study focuses on three-terminal synaptic transistors utilizing graphene P(VDF-TrFE) achieve dynamic reconfigurability between excitatory inhibitory modes, which are crucial for mimicking biological functions. The devices operate applying different top gate spikes (±25 V ±10 V) modulate polarization degree of P(VDF-TrFE), thereby regulating carrier type concentration channel. results effective realization enhancement inhibition processes two neural-like states: accompanied good neural plasticity with paired-pulse facilitation spike-time-dependent plasticity. With these features, brain-like memory human-like perception functions, exhibiting excellent stability, durability over 1000 cycles, long retention period exceeding 10 years. Additionally, performance artificial network is evaluated handwritten digit recognition, achieving high recognition accuracy 92.28%. Our showcases development highly stable, dynamically reconfigurable capable emulating complex providing foundation emerging systems technologies.
Language: Английский
Citations
1
Nano Letters, Journal Year: 2025, Volume and Issue: 25(9), P. 3515 - 3523
Published: Feb. 24, 2025
Two-dimensional (2D) semiconductors hold significant potential for the fabrication of self-powered reconfigurable devices due to their atomically thin body thickness and excellent heterogeneous integration capabilities. Despite these advantages, regulating polarity in 2D remains challenging, complex heterostructures hinder practical applications. Here, we demonstrate a metal-semiconductor-metal (MSM) two-terminal structure achieve multiple functions MoS2 devices. By applying different voltage pulses modulate sulfur vacancy concentration, device obtains reversible internal electric field, leading bidirectional photocurrent that switches from negative positive. This achieves fastest response speed 224 μs maximum responsivity 280 mA/W. Besides, proposed resistance-dependent method stable modulation successfully implement image processing object detection using convolutional neural network (CNN). work provides straightforward approach integrating next-generation optoelectronic
Language: Английский
Citations
1