
ACS Nano, Journal Year: 2024, Volume and Issue: 18(47), P. 32279 - 32282
Published: Nov. 26, 2024
Language: Английский
ACS Nano, Journal Year: 2024, Volume and Issue: 18(47), P. 32279 - 32282
Published: Nov. 26, 2024
Language: Английский
Quantum Reports, Journal Year: 2024, Volume and Issue: 6(4), P. 627 - 663
Published: Nov. 16, 2024
Quantum computing stands at the precipice of technological revolution, promising unprecedented computational capabilities to tackle some humanity’s most complex problems. The field is highly collaborative and recent developments such as superconducting qubits with increased scaling, reduced error rates, improved cryogenic infrastructure, trapped-ion high-fidelity gates control hardware complexity, photonic exploring room-temperature quantum are key pushing closer demonstrating real-world applications. However, path realizing this promise fraught significant obstacles across several platforms, including sensitivity errors, decoherence, scalability, need for new materials technologies. Through an exploration various systems, paper highlights both potential challenges discusses essential role middleware, development, strategic investments required propel forward. With a focus on overcoming technical hurdles through innovation interdisciplinary research, review underscores transformative impact could have diverse sectors.
Language: Английский
Citations
8Scripta Materialia, Journal Year: 2025, Volume and Issue: 258, P. 116533 - 116533
Published: Jan. 5, 2025
Language: Английский
Citations
0Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(4)
Published: Jan. 28, 2025
Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. The remaining loss pathways originate microscopic defects that manifest as two level systems (TLSs) at temperatures. These limit performance, so careful attention to tantalum film structures is critical for optimal use quantum devices. In this work, we investigate the growth of using magnetron sputtering on sapphire, Si, and photoresist substrates. case present procedures fully-oriented with α-Ta [1 1 1]//Al2O3 [0 0 1] −1 0]//Al2O3 0] orientational relationships having residual resistivity ratio (RRR) ∼ 60 220 nm thick films. On find a complex grain texturing Ta normal substrate RRR 30. We further demonstrate airbridge fabrication Nb nucleate surfaces. For resonators show TLS-limited quality factors 1.3 ± 0.3 × 106 10 mK (for waveguide gap conductor width 3 6 μm, respectively). Structural characterization scanning electron microscopy, x-ray diffraction, temperature transport, secondary ion mass spectrometry, transmission microscopy reveal dependence impurities screw dislocation density processing conditions. results provide practical insights advanced devices including arrays guide future works crystallographically deterministic fabrication.
Language: Английский
Citations
0Scientific Reports, Journal Year: 2024, Volume and Issue: 14(1)
Published: Nov. 9, 2024
Abstract In planar superconducting circuits, decoherence due to materials imperfections, especially two-level-system (TLS) defects at different interfaces, is a primary hurdle for advancing quantum computing and sensing applications. Traditional methods mitigating TLS loss, such as etching oxide layers metal substrate have proven be inadequate the persistent challenge of regrowth. this work, we introduce novel approach that employs molecular self-assembled monolayers (SAMs) chemically bind interfaces circuits. This technique specifically tested here on coplanar waveguide (CPW) resonators, in which method not only impedes regrowth after surface but can also tailors dielectric properties resonators interfaces. The deployment SAMs results consistent improvement measured quality factors across multiple surpassing those with oxide-etched resonators. efficiency our supported by microwave measurements devices conducted millikelvin temperatures correlated detailed X-ray photoelectron spectroscopy (XPS) transmission electron microscopy (TEM) characterizations SAM-passivated compatibility established fabrication techniques offers promising route improve performance devices.
Language: Английский
Citations
1Acta Materialia, Journal Year: 2024, Volume and Issue: 284, P. 120631 - 120631
Published: Dec. 6, 2024
Language: Английский
Citations
1ACS Nano, Journal Year: 2024, Volume and Issue: 18(47), P. 32279 - 32282
Published: Nov. 26, 2024
Language: Английский
Citations
1