Progress in Materials Science, Journal Year: 2024, Volume and Issue: unknown, P. 101420 - 101420
Published: Dec. 1, 2024
Language: Английский
Advanced Materials, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 31, 2025
Abstract SnTe‐based thermoelectric materials have attracted significant attention for their exceptional performance in mid‐to‐high temperature ranges, positioning them as promising candidates power generation. However, efficiency is constrained by challenges related to electronic structure, defect chemistry, and phonon behavior. This review comprehensively summarizes advancements SnTe devices over the past five years, focusing on strategies address these limitations. Key approaches include regulation, carrier transport optimization, engineering enhance electrical conductivity, reduce thermal improve overall conversion efficiency. The highlights breakthroughs fabrication methods, doping alloying, composite designs, development of novel nanostructures, with particular emphasis 2D such monolayers, bilayers, thin films, which offer new opportunities enhancement. Additionally, it provides an overview devices, covering techniques, stability, flexible device development. Despite progress, remain developing n‐type materials, optimizing interfaces, ensuring long‐term maximizing fills gaps existing literature offers valuable insights guidance future research aimed at improving properties, advancing integration, driving commercial viability practical applications.
Language: Английский
Citations
1
Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown
Published: March 11, 2025
Abstract Rhombohedral GeSe has attracted extensive attention due to its facile fabrication, low toxicity, and greater affordability compared with popular GeTe‐based thermoelectrics. However, thermoelectric properties require further optimization for practical applications. Here, a peak figure‐of‐merit of 1.31 at 623 K is reported p‐type polycrystalline (GeSe) 0.9 (AgBiTe 2 ) 0.1 ‐1.5 mol.% SnSe, ranking among the highest values. AgBiTe alloying induces phase transition in from orthorhombic rhombohedral while compositing which known thermal conductivity, establishes interfaces strong phonon scattering weak electron scattering. This strategy effectively suppresses transport maintaining exceptional electrical properties. Structural analyses reveal that multiscale defects, including intensive point defects (Ag Ge , Bi Te Se ), linear (dislocation arrays), planar (grain boundaries boundaries), volume (SnSe Ag phases), result an ultra‐low lattice conductivity 0.26 W m −1 K, approaching amorphous limit. Density functional theory calculations nanostructure characterizations indicate bonding between SnSe matrix, coupled minimal electronegativity difference Sn Ge, minimizes carrier sustains high performance.
Language: Английский
Citations
1
Energy Conversion and Management, Journal Year: 2025, Volume and Issue: 332, P. 119621 - 119621
Published: March 13, 2025
Language: Английский
Citations
1
Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 179024 - 179024
Published: Feb. 1, 2025
Language: Английский
Citations
0
Applied Physics Reviews, Journal Year: 2025, Volume and Issue: 12(1)
Published: March 1, 2025
This is a review of theoretical and methodological development over the past decade pertaining to computational characterization thermoelectric materials from first principles. Primary focus on electronic thermal transport in solids. Particular attention given relationships between various methods terms hierarchy as well tradeoff physical accuracy efficiency each. Further covered are up-and-coming for modeling defect formation dopability, keys realizing material's potential. We present discuss all these close connection with parallel developments high-throughput infrastructure code implementation that enable large-scale computing screening. In all, it demonstrated advances tools now ripe efficient accurate targeting needles haystack, which “next-generation” materials.
Language: Английский
Citations
0
Acta Metallurgica Sinica (English Letters), Journal Year: 2025, Volume and Issue: unknown
Published: March 28, 2025
Language: Английский
Citations
0
Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(16)
Published: April 21, 2025
The Rashba effect, induced by the spin–orbit coupling and broken inversion symmetry, has been regarded as an effective strategy to increase thermoelectric performance due enhanced band degeneracy. We herein use first-principles calculations Boltzmann transport theory explore properties of 2D Janus RbKNaBi. It is found that RbKNaBi a semiconductor with narrow bandgap 0.215 eV large constant 0.263 eVÅ. p-type doping exhibits higher power factor than n-type one effect longer relaxation time hole. Strong anharmonicity observed weak chemical bond heavy atomic mass in RbKNaBi, which leads ultralow lattice thermal conductivity 1.46 (0.87) Wm−1K−1 at 300 (500) K. Ultimately, high figure merit 2.50 500 K achieved rare narrow-gap semiconductors or medium temperature. These results demonstrate promising candidate for medium-temperature applications.
Language: Английский
Citations
0
Water Research, Journal Year: 2025, Volume and Issue: unknown, P. 123717 - 123717
Published: April 1, 2025
Language: Английский
Citations
0
Progress in Materials Science, Journal Year: 2025, Volume and Issue: unknown, P. 101498 - 101498
Published: April 1, 2025
Language: Английский
Citations
0
Physica B Condensed Matter, Journal Year: 2025, Volume and Issue: unknown, P. 417358 - 417358
Published: May 1, 2025
Language: Английский
Citations
0