
Progress in Materials Science, Journal Year: 2024, Volume and Issue: unknown, P. 101420 - 101420
Published: Dec. 1, 2024
Language: Английский
Progress in Materials Science, Journal Year: 2024, Volume and Issue: unknown, P. 101420 - 101420
Published: Dec. 1, 2024
Language: Английский
Advanced Materials, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 31, 2025
Abstract SnTe‐based thermoelectric materials have attracted significant attention for their exceptional performance in mid‐to‐high temperature ranges, positioning them as promising candidates power generation. However, efficiency is constrained by challenges related to electronic structure, defect chemistry, and phonon behavior. This review comprehensively summarizes advancements SnTe devices over the past five years, focusing on strategies address these limitations. Key approaches include regulation, carrier transport optimization, engineering enhance electrical conductivity, reduce thermal improve overall conversion efficiency. The highlights breakthroughs fabrication methods, doping alloying, composite designs, development of novel nanostructures, with particular emphasis 2D such monolayers, bilayers, thin films, which offer new opportunities enhancement. Additionally, it provides an overview devices, covering techniques, stability, flexible device development. Despite progress, remain developing n‐type materials, optimizing interfaces, ensuring long‐term maximizing fills gaps existing literature offers valuable insights guidance future research aimed at improving properties, advancing integration, driving commercial viability practical applications.
Language: Английский
Citations
3Energy Conversion and Management, Journal Year: 2025, Volume and Issue: 332, P. 119621 - 119621
Published: March 13, 2025
Language: Английский
Citations
2Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown
Published: March 11, 2025
Abstract Rhombohedral GeSe has attracted extensive attention due to its facile fabrication, low toxicity, and greater affordability compared with popular GeTe‐based thermoelectrics. However, thermoelectric properties require further optimization for practical applications. Here, a peak figure‐of‐merit of 1.31 at 623 K is reported p‐type polycrystalline (GeSe) 0.9 (AgBiTe 2 ) 0.1 ‐1.5 mol.% SnSe, ranking among the highest values. AgBiTe alloying induces phase transition in from orthorhombic rhombohedral while compositing which known thermal conductivity, establishes interfaces strong phonon scattering weak electron scattering. This strategy effectively suppresses transport maintaining exceptional electrical properties. Structural analyses reveal that multiscale defects, including intensive point defects (Ag Ge , Bi Te Se ), linear (dislocation arrays), planar (grain boundaries boundaries), volume (SnSe Ag phases), result an ultra‐low lattice conductivity 0.26 W m −1 K, approaching amorphous limit. Density functional theory calculations nanostructure characterizations indicate bonding between SnSe matrix, coupled minimal electronegativity difference Sn Ge, minimizes carrier sustains high performance.
Language: Английский
Citations
1Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 179024 - 179024
Published: Feb. 1, 2025
Language: Английский
Citations
0ACS Applied Energy Materials, Journal Year: 2025, Volume and Issue: unknown
Published: March 8, 2025
Language: Английский
Citations
0Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 1, 2025
We determined that GeSb 4 Te 7 -based compounds exhibit site-occupational disorder of Ge/Sb cations and In-doping significantly lowers the thermal conductivity, enhances Seebeck coefficient, improves power factor pristine .
Language: Английский
Citations
0Applied Physics Reviews, Journal Year: 2025, Volume and Issue: 12(1)
Published: March 1, 2025
This is a review of theoretical and methodological development over the past decade pertaining to computational characterization thermoelectric materials from first principles. Primary focus on electronic thermal transport in solids. Particular attention given relationships between various methods terms hierarchy as well tradeoff physical accuracy efficiency each. Further covered are up-and-coming for modeling defect formation dopability, keys realizing material's potential. We present discuss all these close connection with parallel developments high-throughput infrastructure code implementation that enable large-scale computing screening. In all, it demonstrated advances tools now ripe efficient accurate targeting needles haystack, which “next-generation” materials.
Language: Английский
Citations
0Acta Metallurgica Sinica (English Letters), Journal Year: 2025, Volume and Issue: unknown
Published: March 28, 2025
Language: Английский
Citations
0Materials Science in Semiconductor Processing, Journal Year: 2025, Volume and Issue: 193, P. 109520 - 109520
Published: April 1, 2025
Language: Английский
Citations
0Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: 512, P. 162312 - 162312
Published: April 8, 2025
Language: Английский
Citations
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