The evolution of 2D vdW ferroelectric materials: Theoretical prediction, experiment confirmation, applications DOI
Hong Wang,

Yusong Tang,

Xu Han

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(2)

Published: June 1, 2024

Since J. Valasek first discovered ferroelectric materials in 1920, researchers have been exploring continuously various fields through theory and experiments. With the rapid development of computing technology, energy efficiency size requirements semiconductor devices are becoming increasingly demanding. However, conventional materials, which limited by physical restrictions, can no longer satisfy above requirements. Two-dimensional (2D) effectively overcome limitation traditional ferroelectrics due to weak van der Waals force between layers, is easy thin while retaining their own unique properties. Currently, a small number 2D proved be properties experiments shown great application potential nanoscale electrical optoelectronic devices, expected become leaders next-generation computing. In this review, current summarized discussed detail from seven aspects: theoretical prediction, fabrication methods, characterization principles typical ferroelectrics, optimization methods performance, application, challenges. Finally, looks into future.

Language: Английский

Bilayer stacking ferrovalley materials without breaking time-reversal and spatial-inversion symmetry DOI
Guoliang Yu, Junyi Ji, Changsong Xu

et al.

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 109(7)

Published: Feb. 28, 2024

Ferrovalley, which refers to the valley polarization being nonvolatile and switchable, is highly desired for valleytronics applications but remains challenging due rare candidate materials. Here we propose a strategy realize ferrovalley with bilayer stacking (BSFV) in many systems. As special case of BSFV, sliding corresponds bilayers obtained by direct AA subsequent in-plane sliding. Different from previous approaches, BSFV not only maintains time-reversal symmetry, also keeps spatial-inversion symmetry cases. Importantly, switching can be easily achieved interlayer Group theory analysis systematically performed over all kinds lattices identify those that host BSFV. High-throughput screening carried out leads 14 candidates bandgap 338 indirect bandgap. First-principles verification indicates realized in, e.g., (i) hexagonal $\mathrm{RhC}{\mathrm{l}}_{3}$ threefold rotation 39 meV energy difference among valleys, (ii) square-latticed InI fourfold 326 valleys. The presently proposed offers convenient approach realization polarizers advancement applications.

Language: Английский

Citations

8
2D Janus Polarization Functioned by Mechanical Force DOI
Zhao Guan, Yunzhe Zheng, Wen‐Yi Tong

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(30)

Published: May 14, 2024

Abstract 2D polarization materials have emerged as promising candidates for meeting the demands of device miniaturization, attributed to their unique electronic configurations and transport characteristics. Although existing inherent sliding mechanisms are increasingly investigated in recent years, strategies inducing with innovative remain rare. This study introduces a novel Janus state by modulating puckered structure. Combining scanning probe microscopy, transmission electron density functional theory calculations, this work realizes force‐triggered out‐of‐plane in‐plane dipoles distorted smaller warping GeSe. The is preserved after removing external mechanical perturbation, which could be switched direction. offers versatile method break space inversion symmetry system trigger atomic scale, may open an insight into configuring materials.

Language: Английский

Citations

7
Emerging Multifunctionality in 2D Ferroelectrics: A Theoretical Review of the Interplay With Magnetics, Valleytronics, Mechanics, and Optics DOI Open Access

Yan‐Fang Zhang,

Hao Guo,

Yongqian Zhu

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(51)

Published: Aug. 28, 2024

Abstract 2D ferroelectric materials present promising applications in information storage, sensor technology, and optoelectronics through their coupling with magnetics/valleytronics, mechanics, optics, respectively. The integration of ferroelectrics magnetism enhances data storage density memory devices by enabling electric‐field‐controlled magnetic states. Ferroelectric‐valley holds promise for high‐speed, low‐energy electronics leveraging the electrical control valley polarization. Ferroelectric‐strain results various polar topologies, potential high‐density technologies devices. Moreover, between optics facilitates development nonlinear photonics based on materials. This review summarizes latest theoretical progress mechanisms, including Dzyaloshinskii‐Moriya‐interaction‐induced magnetoelectric coupling, symmetry‐linked ferroelectric‐valley ferroelectric‐strain‐coupling‐generated second‐harmonic generation ferroelectric‐light interactions. current challenges future opportunities harnessing multifunctional are provided.

Language: Английский

Citations

7
Strain engineering the spin-valley coupling of the R-stacking sliding ferroelectric bilayer 2H-VX2 (X = S, Se, Te) DOI Creative Commons
Jiayu Ma, Xin Luo, Yue Zheng

et al.

npj Computational Materials, Journal Year: 2024, Volume and Issue: 10(1)

Published: May 10, 2024

Abstract The emergence of magnetic transition metal dichalcogenides has significantly advanced the development valleytronics due to spontaneous breaking time-reversal symmetry and space-inversion symmetry. However, lack regulation methods prevented researchers from exploring their potential applications. Herein, we propose use strain engineering control spin-valley coupling in sliding ferroelectric bilayer 2H-VX 2 (X = S, Se, Te). Four multiferroic states are constructed by combining ferroelectricity antiferromagnetism R-stacking VX , where spin valley polarizations coupled together layer-dependent spin-polarized band structures. By applying a small external or pressure on out-of-plane van der Waals direction, predicted that there is an antiferromagnetic leading interesting chiral circularly polarized radiation at K + - valleys, similar those found monolayer. To comprehend between various degrees freedom these systems, have developed effective k·p model. This model unveils linear relationship electric polarization generated interlayer energy difference valence maximum valleys. Thus, providing alternate method measure ferroelectrics. Based strong strain, spin-valley, polarization, it likely emerging properties such as anomalous Hall effect.

Language: Английский

Citations

6
The evolution of 2D vdW ferroelectric materials: Theoretical prediction, experiment confirmation, applications DOI
Hong Wang,

Yusong Tang,

Xu Han

et al.

Applied Physics Reviews, Journal Year: 2024, Volume and Issue: 11(2)

Published: June 1, 2024

Since J. Valasek first discovered ferroelectric materials in 1920, researchers have been exploring continuously various fields through theory and experiments. With the rapid development of computing technology, energy efficiency size requirements semiconductor devices are becoming increasingly demanding. However, conventional materials, which limited by physical restrictions, can no longer satisfy above requirements. Two-dimensional (2D) effectively overcome limitation traditional ferroelectrics due to weak van der Waals force between layers, is easy thin while retaining their own unique properties. Currently, a small number 2D proved be properties experiments shown great application potential nanoscale electrical optoelectronic devices, expected become leaders next-generation computing. In this review, current summarized discussed detail from seven aspects: theoretical prediction, fabrication methods, characterization principles typical ferroelectrics, optimization methods performance, application, challenges. Finally, looks into future.

Language: Английский

Citations

6