Physical Review Letters,
Journal Year:
2024,
Volume and Issue:
132(18)
Published: April 30, 2024
Optical
excitations
in
moiré
transition
metal
dichalcogenide
bilayers
lead
to
the
creation
of
excitons,
as
electron-hole
bound
states,
that
are
generically
considered
within
a
Bose-Hubbard
framework.Here,
we
demonstrate
these
composite
particles
obey
an
angular
momentum
commutation
relation
is
generally
non-bosonic.This
emergent
spin
description
excitons
indicates
limitation
their
occupancy
on
each
site,
which
substantial
weak
binding
regime.The
effective
exciton
theory
accordingly
Hamiltonian,
further
becomes
Hubbard
model
bosons
subject
constraint
after
Holstein-Primakoff
transformation.We
apply
our
three
commonly
studied
(MoSe2/WSe2,
WSe2/WS2,
and
WSe2/MoS2)
show
relevant
parameter
regimes
allowed
occupancies
never
exceed
excitons.Our
systematic
provides
guidelines
for
future
research
many-body
physics
excitons.
Reviews of Modern Physics,
Journal Year:
2024,
Volume and Issue:
96(1)
Published: Feb. 27, 2024
Time-resolved
angle-resolved
photoemission
spectroscopy
provides
access
to
light-induced
changes
in
the
electronic
band
structure
and
interactions
of
solids,
out-of-equilibrium
electron
dynamics.
This
article
reviews
history
future
prospects
for
development
technique,
offers
an
overview
recent
achievements
studying
unoccupied
light-driven
states,
photoinduced
phase
transitions,
electron-phonon
scattering,
dynamics
quantum
materials,
including
topological
insulators,
unconventional
superconductors,
traditional
novel
semiconductors,
excitonic
spin-textured
systems.
Science China Information Sciences,
Journal Year:
2024,
Volume and Issue:
67(6)
Published: May 29, 2024
Abstract
Over
the
past
70
years,
semiconductor
industry
has
undergone
transformative
changes,
largely
driven
by
miniaturization
of
devices
and
integration
innovative
structures
materials.
Two-dimensional
(2D)
materials
like
transition
metal
dichalcogenides
(TMDs)
graphene
are
pivotal
in
overcoming
limitations
silicon-based
technologies,
offering
approaches
transistor
design
functionality,
enabling
atomic-thin
channel
transistors
monolithic
3D
integration.
We
review
important
progress
application
2D
future
information
technology,
focusing
particular
on
microelectronics
optoelectronics.
comprehensively
summarize
key
advancements
across
material
production,
characterization
metrology,
electronic
devices,
optoelectronic
heterogeneous
silicon.
A
strategic
roadmap
challenges
for
from
basic
research
to
industrial
development
outlined.
To
facilitate
such
a
transition,
technologies
tools
dedicated
must
be
developed
meet
standards,
employment
AI
growth,
characterizations,
circuit
will
essential.
It
is
time
academia
actively
engage
with
drive
next
10
years
research.
Advanced Materials,
Journal Year:
2022,
Volume and Issue:
35(50)
Published: Nov. 10, 2022
Abstract
The
interface
is
the
device.
As
feature
size
rapidly
shrinks,
silicon‐based
electronic
devices
are
facing
multiple
challenges
of
material
performance
decrease
and
quality
degradation.
Ultrathin
2D
materials
considered
as
potential
candidates
in
future
electronics
by
their
atomically
flat
surfaces
excellent
immunity
to
short‐channel
effects.
Moreover,
due
naturally
terminated
weak
van
der
Waals
(vdW)
interactions
between
layers,
can
be
freely
stacked
without
lattice
matching
limit
form
high‐quality
heterostructure
interfaces
with
arbitrary
components
twist
angles.
Controlled
interlayer
band
alignment
optimized
interfacial
carrier
behavior
allow
all‐2D
based
on
vdW
exhibit
more
comprehensive
functionality
better
performance.
Especially,
achieving
same
computing
capacity
conventional
small
footprint
key
development
direction
electronics.
Herein,
unique
properties
construction
methods
systematically
reviewed
main
contributions
different
summarized,
respectively.
Finally,
recent
progress
for
discussed,
how
improve
compatibility
industrial
technology
pointed
out
a
critical
challenge.
Science,
Journal Year:
2022,
Volume and Issue:
378(6625), P. 1235 - 1239
Published: Dec. 15, 2022
Electronic
and
optical
excitations
in
two-dimensional
moir\'e
systems
are
uniquely
sensitive
to
local
atomic
registries,
leading
materials-
twist-angle
specific
correlated
electronic
ground
states
with
varied
degree
of
localization.
However,
there
has
been
no
direct
experimental
correlation
between
the
sub-nanometer
structure
emergent
excitonic
transitions,
comprising
tightly-bound
pairs
photoexcited
electrons
holes.
Here,
we
use
cryogenic
transmission
electron
microscopy
spectroscopy
simultaneously
image
structural
reconstruction
associated
localization
lowest-energy
intralayer
exciton
a
rotationally
aligned
heterostructure
WS2
WSe2
monolayers.
In
conjunction
ab
initio
calculations,
determine
that
center-of-mass
wavefunction
is
strongly
modulated
space,
confined
radius
~
2
nm
around
highest-energy
stacking
site
unit-cell,
forming
triangular
lattice.
Our
results
provide
evidence
reconstructions
lead
confining
potentials
engineering
strain
at
nanoscale
will
enable
new
types
lattices.
