Abstract
Tin
(Sn)‐based
perovskites
have
made
notable
advances
with
external
quantum
efficiency
of
over
20%,
but
still
exhibit
low
electroluminescence
brightness
insufficient
for
outdoor
displays.
Here,
it
is
demonstrated
that
compact
phenethylammonium
tin
iodide
(PEA
2
SnI
4
)
films
an
intact
crystal
structure
can
offer
high
luminance
by
optimizing
the
perovskite
crystallization
rate
simultaneously
engineering
grain
surface.
Ammonium
thiocyanate
added
to
precursor
solution
generate
film
PEA
x
SCN
4‐
and
NH
I
after
spin‐coating.
Sn
2+
−
a
strong
interaction
slows
improve
quality.
During
subsequent
annealing,
from
replaces
in
forming
thiourea,
which
escape
leave
crystals.
It
found
optimized
emitting
layers
provide
outstanding
coverage,
crystallinity,
trap
state
density,
superior
photophysical
performance.
Consequently,
impressive
8285
cd
m
−2
pure
red
achieved,
first
report
Sn‐based
light‐emitting
diodes
meet
display
requirements.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 19, 2025
Abstract
Over
the
past
decade,
semiconducting
halide
perovskite
lasers
have
emerged
as
a
transformative
platform
in
optoelectronics,
owing
to
unique
properties
such
high
photoluminescence
quantum
yields,
tunable
bandgaps,
and
low‐cost
fabrication
processes.
This
review
systematically
examines
advancements
lasers,
covering
diverse
laser
architectures,
whispering
gallery
mode,
Fabry–Pérot,
plasmonic,
bound
states
continuum
(BIC),
dot,
polariton
lasers.
The
mechanisms
of
optical
gain,
role
material
engineering
optimizing
lasing
performance,
challenges
associated
with
continuous‐wave
(CW)
pumping
electrically
driven
are
discussed.
Furthermore,
recent
progress
improving
stability
scalability
essential
for
their
integration
into
practical
applications
displays,
communications,
sensing,
integrated
photonics
is
highlighted.
Finally,
future
research
directions
discussed,
emphasizing
potential
revolutionize
various
technological
domains
by
enabling
development
next‐generation
photonic
devices.
Advanced Optical Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 25, 2025
Abstract
Perovskite
materials
have
received
considerable
research
attention
owing
to
their
high
carrier
mobility,
photoluminescence
quantum
yield,
and
light
absorption
coefficient.
Their
excellent
optoelectronic
properties
low
material
costs
make
them
a
strong
competitive
raw
for
future
electronic
high‐temperature
superconducting
materials.
In
particular,
when
applied
light‐emitting
diodes
(LEDs)
solar
cells,
conversion
efficiency
relatively
simple
preparation
process
revolutionary
that
may
change
the
pattern
of
perovskite‐based
devices
overcome
limits
industrialization.
However,
with
development
technology,
traditional
treatment
methods
perovskites
no
longer
meet
increasing
demands
industry.
Laser
technology
is
widely
used
its
remarkable
compatibility
perovskite
Therefore,
this
review
summarizes
applications
laser
materials,
including
laser‐induced
nucleation
film
formation,
annealing,
ablation,
printing,
patterning,
discusses
achievements
researchers
in
using
regulate
recent
years,
highlights
prospects
technology.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 29, 2025
Abstract
Spin
light‐emitting
diodes
(spin‐LEDs)
are
important
for
spin‐based
electronic
circuits
as
they
convert
the
carrier
spin
information
to
optical
polarization.
Recently,
chiral‐induced
selectivity
(CISS)
has
emerged
a
new
paradigm
enable
spin‐LED
it
does
not
require
any
magnetic
components
and
operates
at
room
temperature.
However,
CISS‐enabled
with
tunable
wavelengths
ranging
from
red
near‐infrared
(NIR)
yet
be
demonstrated.
Here,
chiral
quasi‐2D
perovskites
developed
fabricate
efficient
spin‐LEDs
NIR
region
by
tuning
halide
composition.
The
optimized
perovskite
films
exhibit
circularly
polarized
luminescence
675
788
nm,
photoluminescence
quantum
yield
(PLQY)
exceeding
86%
dissymmetry
factor
(
g
lum
)
8.5
×
10
−3
2.6
−2
.
More
importantly,
direct
electroluminescence
(CPEL)
is
achieved
temperature
in
spin‐LEDs.
This
work
demonstrated
highest
external
efficiency
(EQE)
reaching
12.4%
(EL)
factors
EL
3.7
1.48
composition‐dependent
CPEL
performance
further
attributed
prolonged
lifetime
revealed
ultrafast
transient
absorption
spectroscopy.
Nature Communications,
Journal Year:
2025,
Volume and Issue:
16(1)
Published: April 5, 2025
Perovskite
light-emitting
diodes
have
drawn
great
attention
in
the
fields
of
displays
and
lighting,
especially
for
applications
requiring
high
efficiency
brightness.
While
three-dimensional
perovskite
hold
promise
achieving
higher
brightness
compared
to
low-dimensional
counterparts,
efficient
blue
remained
a
challenge
due
defect
formation
during
disordered
crystallization
multiple
A-cation
perovskite.
Here
we
demonstrate
an
all-site
alloy
method
that
enables
sequential
A-site
doping
growth
formamidinium
cesium
hybrid
This
approach
significantly
reduces
trap
density
film
by
approximately
one
order
magnitude.
Consequently,
achieve
bright
diode
with
external
quantum
23.3%,
luminous
efficacy
33.4
lm
W-1,
luminance
5700
cd
m-2
emission
peak
at
487
nm.
work
provides
strategy
growing
high-quality
multicomponent
optoelectronics.
Nano Letters,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Sept. 20, 2024
Metal
halide
perovskite
light-emitting
diodes
(PeLEDs)
are
ideal
for
high-resolution
displays
due
to
their
tunable
emission,
narrow
spectra,
and
low-cost
processing.
Colloidal
FAPbBr
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(46)
Published: Sept. 23, 2024
Metal
halide
perovskites,
a
cost-effective
class
of
semiconductos,
hold
great
promise
for
display
technologies
that
demand
high-efficiency,
color-pure
light-emitting
diodes
(LEDs).
Early
research
on
three-dimensional
(3D)
perovskites
showed
low
radiative
efficiencies
due
to
modest
exciton
binding
energies.
To
inprove
luminescence,
reducing
dimensionality
or
grain
size
has
been
common
approach.
However,
dividing
the
perovskite
lattice
into
smaller
units
may
hinder
carrier
transport,
compromising
electrical
performance.
Moreover,
increased
surface
area
introduce
additional
trap
states,
leading
greater
non-radiative
recombination.
Here,
an
ions-induced
growth
method
is
employed
assembe
lattice-anchored
nanocomposites
efficient
LEDs
with
high
color
purity.
This
approach
enables
nanocomposite
thin
films,
composed
3D
CsPbBr
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(46)
Published: Sept. 20, 2024
Blue
perovskite
light-emitting
diodes
(PeLEDs)
have
attracted
enormous
attention;
however,
their
unsatisfactory
device
efficiency
and
spectral
stability
still
remain
great
challenges.
Unfavorable
low-dimensional
phase
distribution
defects
with
deeper
energy
levels
usually
cause
disorder,
substantially
limiting
the
device's
performance.
Here,
an
additive-interface
optimization
strategy
is
reported
to
tackle
these
issues,
thus
realizing
efficient
spectrally
stable
blue
PeLEDs.
A
new
type
of
additive-formamidinium
tetrafluorosuccinate
(FATFSA)
introduced
into
quasi-2D
mixed
halide
accompanied
by
interface
engineering,
which
effectively
impedes
formation
undesired
phases
various
bandgaps
throughout
entire
film,
thereby
boosting
transfer
process
for
accelerating
radiative
recombination;
this
also
diminishes
vacancies
especially
chloride-related
deep
level,
reducing
nonradiative
loss
recombination.
Benefitting
from
homogenized
landscape
emitting
layer,
PeLEDs
spectrally-stable
emission
(478
nm)
champion
external
quantum
(EQE)
21.9%
are
realized,
represents
a
record
value
among
in
pure
region.