Highly Efficient and Thermally Stable Broadband NIR Phosphors with Superlong Afterglow Performance and their Multifunctional Applications

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: 18(10)

Published: May 16, 2024

Abstract Near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are considered as promising next‐generation light sources for optoelectronic and biomedical applications. Nevertheless, NIR phosphors with large bandwidths, long emission peaks, high external quantum efficiencies (EQEs) valuable thermal stabilities challenging to develop. Herein, this study reports a novel gallium germanate host, Ga 3 Al Ge 2 O 13 (GAGO), bandgap rigid host lattice Cr 3+ ion doping. The blue LED excitable GAGO:0.012Cr phosphor can produce broadband maximum intensity at 816 nm full‐width half‐maximum (FWHM) of 187 nm. Notably, the also exhibits an excellent EQE 35.8% perfect stability (I 423 K /I 298 = 67.4%). Moreover, attractive afterglow duration more than 24 h is achieved in GAGO:0.004Cr phosphor. type origin traps discussed, possible persistent luminescent (LPL) mechanism proposed. Finally, pc‐LED based on fabricated. results demonstrate that obtained show great potential use night vision, nondestructive detection, bioimaging information encryption. This provides new insight into development materials efficiency, good extraordinary performance.

Language: Английский

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Directly Identifying Multiple Cr³⁺ Emitting Centers for Broad Near‐Infrared Emission in an Efficient and Near‐Zero Thermal Quenching Garnet‐Type Phosphor

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(11)

Published: Feb. 8, 2024

Abstract Cr 3+ doped garnet‐type (A 3 B 2 C O 12 ) near‐infrared (NIR) phosphors is a desirable research hotspot due to their prospective night vision, bioimaging, and plant growth utilizations. Meanwhile, the origin of multisite broad emission yet controversial topic. To resolve trouble, verifying accurately multiple occupancy sites key. Furthermore, it an urgent need for improving external quantum efficiency luminescent thermostability. Herein, in Y Sc Al (YSAO), advanced electron microscopy technique employed directly confirm that obtained broadband NIR originates from [ScO 6 ] octahedral [YO 8 dodecahedral sites. The optimal YSAO:5%Cr sample exhibits high (IQE/EQE = 74/31%) near‐zero thermal quenching (97%@423 K 92%@473 K). theoretical calculations experimental proofs reveal YSAO possesses structural rigidity wide bandgap, which responsible extremely thermostable luminescence. high‐power ‐converted LED device shows promising multifunctional applications. This work not only provides efficient phosphor with quenching, but also effective determination method emitting centers materials.

Language: Английский

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Efficient Ultra‐Broadband Ga₄GeO₈:Cr³⁺ Phosphors with Tunable Peak Wavelengths from 835 to 980 nm for NIR pc‐LED Application

Advanced Optical Materials, Journal Year: 2021, Volume and Issue: 10(4)

Published: Dec. 18, 2021

Abstract Near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) hold great potential for applications ranging from night vision to non‐destructive detection. However, it remains a long‐standing challenge develop NIR phosphors simultaneously with longer‐wavelength broadband emissions and higher efficiency. Herein, ultra‐broadband Ga 4 GeO 8 :Cr 3+ (GGO:Cr ) are developed, the emission covering 700–1300 nm. Furthermore, tunable bands peaking 835 980 nm achieved simply by varying Cr concentration. Particularly, maxima (λ max of GGO: x shift 850 900 without intensity loss when increasing values between 0.02 0.10. An internal quantum yield 60% is GGO:0.02Cr ≈ nm, full width at half maximum (FWHM) ≈215 nm). The origin GGO:Cr revealed on basis structural time‐resolved spectroscopic analysis. pc‐LED fabricated exhibits output power ≈56 mW 400 mA drive current, its application in high‐penetration quality analysis fruits also demonstrated. results indicate that have high promise practical devices.

Language: Английский

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Two Selective Sites Control of Cr³⁺‐Doped ABO₄ Phosphors for Tuning Ultra‐Broadband Near‐Infrared Photoluminescence and Multi‐Applications

Laser & Photonics Review, Journal Year: 2021, Volume and Issue: 16(2)

Published: Dec. 11, 2021

Abstract Achieving ultra‐broadband and tunable photoluminescence of near‐infrared (NIR) emitting phosphors is a key challenge for realizing its multi‐applications. Here, series new ABO 4 :Cr 3+` (A 3+ = Ga, Sc, In; B 5+ Ta, Nb) NIR‐emitting with unprecedented based on crystallographic site engineering crystal field regulation reported. Large spectral tuning from NIR‐I to NIR‐II realized the peak position varying 825 1025 nm, by cation substitution decreasing strength. Broadened full‐width at half maximum 125 231 nm can be tailored controlling occupancy Cr two different sites. Potential multi‐applications NIR are proposed validated in spectroscopy detection, night vision, penetrating biology tissue, so on. This work demonstrates that effectively tune optical properties ‐doped phosphor materials multi‐photoelectric applications.

Language: Английский

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Controlling Cr3+/Cr4+ concentration in single-phase host toward tailored super-broad near-infrared luminescence for multifunctional applications

Materials Today Chemistry, Journal Year: 2021, Volume and Issue: 22, P. 100555 - 100555

Published: Sept. 11, 2021

Language: Английский

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