Published: Jan. 1, 2024
Language: Английский
Published: Jan. 1, 2024
Language: Английский
Plasmonics, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 15, 2025
Language: Английский
Citations
4Microchemical Journal, Journal Year: 2024, Volume and Issue: 201, P. 110713 - 110713
Published: May 10, 2024
Language: Английский
Citations
12Journal of Semiconductors, Journal Year: 2025, Volume and Issue: 46(4), P. 042102 - 042102
Published: April 1, 2025
Abstract Semiconductor colloidal quantum wells (CQWs) with atomic-precision layer thickness are rapidly gaining attention for next-generation optoelectronic applications due to their tunable optical and electronic properties. In this study, we investigate the dielectric characteristics of CdSe CQWs monolayer numbers ranging from 2 7, synthesized via thermal injection atomic (c-ALD) deposition techniques. Through a combination spectroscopic ellipsometry (SE) first-principles calculations, demonstrate significant tunability bandgap, refractive index, extinction coefficient, driven by confinement effects. Our results show decrease in bandgap 3.1 2.0 eV as increases. Furthermore, employing detailed analysis absorption spectra, accounting exciton localization asymmetric broadening, precisely capture relationship between number binding energy. These findings offer crucial insights optimizing device design leveraging layer-dependent
Language: Английский
Citations
1Sensors and Actuators A Physical, Journal Year: 2024, Volume and Issue: 377, P. 115719 - 115719
Published: July 19, 2024
Language: Английский
Citations
6Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown
Published: July 3, 2024
Abstract In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from responsivity noise at THz frequencies. this review, advances in Si‐based using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, improved thermal isolation. The different types exploiting SOI substrate, conventional effect transistors (MOSFETs), junction‐less MOSFETs, nanowires (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, single electron transistor (SET), discussed, key performances terms responsivity, equivalent power (NEP), bandwidth, dynamic range compared. challenges opportunities for further improvement detectors, scaling, integration, modulation, also highlighted. This review may compelling evidence supporting idea that potential to facilitate performance, consumption, scalability—qualities essential advancing next‐level
Language: Английский
Citations
5Surfaces and Interfaces, Journal Year: 2024, Volume and Issue: 52, P. 104996 - 104996
Published: Aug. 23, 2024
Language: Английский
Citations
5Chemical Reviews, Journal Year: 2024, Volume and Issue: unknown
Published: Dec. 18, 2024
Two-dimensional organic-inorganic (2DOI) van der Waals hybrids (vdWhs) have emerged as a groundbreaking subclass of layer-stacked (opto-)electronic materials. The development 2DOI-vdWhs via systematically integrating inorganic 2D layers with organic crystals at the molecular/atomic scale extends capabilities traditional vdWhs, thanks to their high synthetic flexibility and structural tunability. Constructing an hybrid interface atomic precision will unlock new opportunities for generating unique interfacial transport properties by combining strengths layers, thus allowing us satisfy growing demand multifunctional applications. Here, this review provides comprehensive overview latest advancements in chemical synthesis, characterization, numerous applications 2DOI-vdWhs. Firstly, we introduce chemistry physical recently rising (O2DCs), which feature crystalline nanostructures comprising carbon-rich repeated units linked covalent/noncovalent bonds exhibit strong in-plane extended π-conjugation weak interlayer vdWs interaction. Simultaneously, representative (I2DCs) are briefly summarized. After that, strategies be summarized, including synthesizing single-component O2DCs dimensional control vdWhs I2DCs. With these approaches, dimension, stacking modes, composition highlighted. Subsequently, special focus given on discussion optical electronic materials closely relevant structures, so that can establish general structure-property relationship In addition properties, devices such transistors, photodetectors, sensors, spintronics, neuromorphic well energy discussed. Finally, provide outlook discuss key challenges future development. This aims foundational understanding inspire further innovation next-generation transformative technological potential.
Language: Английский
Citations
4Published: Jan. 1, 2025
Language: Английский
Citations
0Current Opinion in Solid State and Materials Science, Journal Year: 2025, Volume and Issue: 34, P. 101213 - 101213
Published: Jan. 1, 2025
Language: Английский
Citations
0Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: 61, P. 106098 - 106098
Published: Feb. 28, 2025
Language: Английский
Citations
0