ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode DOI
Kimberly Intonti, Aniello Pelella, Hazel Neill

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(17)

Published: Oct. 21, 2024

2D/3D van der Waals heterostructures provide an excellent platform for high-performance optoelectronic systems by combining the intrinsic properties of 2D and 3D materials. In this study, we fabricate study a type II ReS2/Si vertical heterojunction with multi-mode photodetection. dark, exhibits diode-like behavior low reverse current high rectification ratio ∼103. Under illumination, device shows linear response to light intensity. The photodetector stable repeatable switching can be operated in self-powered mode responsivity about 0.10 mA/W at 10 mW incident power time 300 μs. Based on first-principles calculations, propose model elucidate photoconduction mechanisms occurring heterostructure.

Language: Английский

Enabling p-type conductivity in SnSe2: Oxygen substitution and interface engineering strategies DOI

Hanbin Chen,

Shengqian Zheng,

Shanzheng Du

et al.

Applied Surface Science, Journal Year: 2025, Volume and Issue: unknown, P. 163557 - 163557

Published: May 1, 2025

Language: Английский

Citations

0

Photogalvanic effect in two-dimensional BGe photodetector by vacancy- and substitution-doping DOI

Xi Fu,

Guangyao Liang,

Jianbo Lin

et al.

Physica B Condensed Matter, Journal Year: 2024, Volume and Issue: 686, P. 416075 - 416075

Published: May 7, 2024

Language: Английский

Citations

1

Enhanced p-type conductivity of hexagonal boron nitride by an efficient two-step doping strategy DOI Creative Commons

Yuang Cheng,

Yang Chen,

Bingchen Lv

et al.

Optical Materials Express, Journal Year: 2024, Volume and Issue: 14(8), P. 1961 - 1961

Published: June 27, 2024

The present study proposes a two-step doping strategy for achieving efficient Mg of h-BN, involving an additional post-annealing treatment. This approach leads to ∼10 8 -fold enhancement in conductivity compared with the as-doped h-BN grown by low-pressure chemical vapor deposition. mechanism large efficiency after was investigated, providing evidence that this treatment not only facilitates nanoparticle decomposition and incorporation atoms into but also restores its lattice defects. p-type enlightens promising prospects ultraviolet optoelectronic devices.

Language: Английский

Citations

1

Frictional Resistance and Delamination Mechanisms in 2D Tungsten Diselenide Revealed by Multi-scale Scratch and In-situ Observations DOI

Tanaji Paul,

Tyler Dolmetsch, Lihua Lou

et al.

Nanotechnology, Journal Year: 2024, Volume and Issue: 35(39), P. 395703 - 395703

Published: July 11, 2024

Abstract Friction phenomena in two-dimensional (2D) materials are conventionally studied at atomic length scales a few layers using low-load techniques. However, the advancement of 2D for semiconductor and electronic applications requires an understanding friction delamination micrometers scale hundreds layers. To bridge this gap, present study investigates frictional resistance mechanisms tungsten diselenide (WSe 2 ) 10 µ m 100–500 nm depths integrated force microscopy (AFM), high-load nanoscratch, in-situ scanning electron microscopic (SEM) observations. AFM revealed heterogenous distribution single WSe layer originating from surface ripples, with mean increasing 8.7 to 79.1 nN as imposed increased 20 80 nN. High-load nano-scratch tests delineated role individual mechanism multi-layer under SEM. Delamination during scratch consists stick-slip motion each successive slip, manifested slope lateral curves depth 10.9 13.0 (× 3 Nm −1 . is followed by cyclic fracture where puckering effect results adherence nanoscratch probe, local maximum 89.3 205.6 N. This establishment interconnectedness between single-layer harbors potential utilizing these devices reduced energy losses enhanced performance.

Language: Английский

Citations

1

ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode DOI
Kimberly Intonti, Aniello Pelella, Hazel Neill

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(17)

Published: Oct. 21, 2024

2D/3D van der Waals heterostructures provide an excellent platform for high-performance optoelectronic systems by combining the intrinsic properties of 2D and 3D materials. In this study, we fabricate study a type II ReS2/Si vertical heterojunction with multi-mode photodetection. dark, exhibits diode-like behavior low reverse current high rectification ratio ∼103. Under illumination, device shows linear response to light intensity. The photodetector stable repeatable switching can be operated in self-powered mode responsivity about 0.10 mA/W at 10 mW incident power time 300 μs. Based on first-principles calculations, propose model elucidate photoconduction mechanisms occurring heterostructure.

Language: Английский

Citations

1