Controlled growth of asymmetric chiral TeOx for broad-spectrum, high-responsivity and polarization-sensitive photodetection DOI

B L Zhang,

Zhikang Ao,

Fen Zhang

et al.

The Journal of Chemical Physics, Journal Year: 2024, Volume and Issue: 161(8)

Published: Aug. 22, 2024

Low-dimensional nanostructures, especially one-dimensional materials, exhibit remarkable anisotropic characteristics due to their low symmetry, making them promising candidates for polarization-sensitive photodetection. Here, we present a chemical vapor deposition synthesis method tellurium suboxide (TeOx), confirming the practicality of photodetectors constructed from TeOx nanowires (NWs) in high-responsivity, broadband, and detection. By precisely controlling thermodynamics kinetics NWs growth, achieve large-scale growth with highly controllable dimensions propose induce intrinsic built-in strain NWs. Photodetectors based on quasi-one-dimensional ohmic contact demonstrate broadband spectral response (638–1550 nm), high responsivity (13 700 mA·W−1), superior air stability. Particularly, owing inherent structural anisotropy photodetectors, they photodetection, ratios 1.70 1.71 at 638 808 nm, respectively.

Language: Английский

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation DOI

Xiqiang Chen,

Qiyang Zhang,

Junhao Peng

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(11), P. 13927 - 13937

Published: March 8, 2024

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation free photoexcited carriers, thereby restricting widespread applications. To address this challenge, we propose an efficient WS2/CuInP2S6 photodetector by combining band engineering ferroelectric modulation. In device, asymmetric conduction valence offsets effectively block majority carriers (free electrons), while holes are efficiently tunneled rapidly collected bottom electrode. Additionally, CuInP2S6 layer generates polarization states that reconfigure built-in electric field, reducing dark facilitating separation photocarriers. Moreover, photoelectrons trapped during long-distance lateral transport, resulting a high photoconductivity gain. Consequently, device achieves impressive responsivity 88 A W–1, outstanding specific detectivity 3.4 × 1013 Jones, fast 37.6/371.3 μs. capability high-resolution imaging under various wavelengths optical communication has been successfully demonstrated using highlighting its promising application prospects future

Language: Английский

Citations

9

Advanced T‐In2Se3/M‐WS2/B‐WSe2 Photodetectors Enabled by Cascaded Band Tailoring and Charge Reservoir Engineering DOI Open Access
Ye Xiao,

Zhongtong Luo,

Zhanxiong Qiu

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 17, 2025

Abstract Taking advantage of their unparalleled electrostatic and optoelectronic properties, 2D layered materials (2DLMs) have emerged as alluring building blocks for crafting advanced photodetectors. Nevertheless, preceding research has predominantly concentrated on rudimentary designs incorporating single‐channel or single‐junction setups, failing to exert the full potency 2DLMs. Therefore, there is still an imperative requirement develop innovative device architectures grounded in novel physical mechanisms. Herein, a T‐In 2 Se 3 /M‐WS /B‐WSe heterojunction photodetector boasting pronounced gate‐tunability devised, achieving remarkable light on/off ratio 5.8 × 10 4 detectivity 1.1 13 Jones at V gs = −25 V, alongside competitive responsivity gain 633 A W −1 1943 30 V. Energy band analysis determined that former associated with synergy cascaded alignment high degree depletion effect, while latter ascribed intermediate electron reservoir enabling high‐efficiency spacial separation photoexcited electron−hole pairs. Leveraging this pivotal sensing component, proof‐of‐concept applications spanning broadband imaging automatic driving are demonstrated. This study presents paradigm constructing 2DLM‐based photodetectors outstanding comprehensive performance, thereby establishing fascinating platform capable catering diverse demands next‐generation industry.

Language: Английский

Citations

1

Wafer‐Scale Fabrication of Broadband Sb2Se3 Photodetectors and their Multifunctional Optoelectronic Applications DOI
Yuhang Ma, Zexiang Deng,

Huanrong Liang

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 6, 2024

Abstract Low‐dimensional van der Waals materials (vdWMs) have attracted worldwide interest on account of numerous advantages including self‐passivated surface, high carrier mobility, excellent flexibility, etc . Among multiple vdWMs, Sb 2 Se 3 stands out due to its light absorption coefficient, environmentally friendly components, stability, and abundant reserve. However, limited effective wavelength range unscalable preparation been obstinate issues standing in the way further development. Herein, pulsed‐laser deposition (PLD) has developed for synthesizing nanofilms, wafer‐scale realized. The PLD‐derived photodetector demonstrates broadband photoresponse across UV NIR. First‐principles calculations determined that this is because formation vacancies can result a reduction bandgap. Upon 635 nm illumination, an optimal responsivity 2.68 A W −1 achieved, corresponding external quantum efficiency 524% specific detectivity 1.34 × 10 12 Jones. Furthermore, device manifests short response/recovery time ≈2/1 ms. Proof‐of‐concept imaging as well fitness monitoring (respiratory rate & heart rate) Profited from scalable preparation, array photodetectors produced, exhibiting qualified device‐to‐device variation. On whole, study depicted attractive landscape next‐generation integrated optoelectronics.

Language: Английский

Citations

8

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices? DOI
Yuhang Ma,

Huanrong Liang,

Xinyi Guan

et al.

Nanoscale Horizons, Journal Year: 2024, Volume and Issue: 9(10), P. 1599 - 1629

Published: Jan. 1, 2024

The applications of 2D material photodetectors in extensive fields, including imaging, health monitoring, tracking, logic operation, ultraviolet communications, automatic driving, and acoustic signal detection, have been introduced.

Language: Английский

Citations

6

Angle-resolved Raman scattering study of anisotropic two-dimensional tellurium nanoflakes DOI Creative Commons

Yuhao Duan,

Deming Zhao,

Zhonglin Li

et al.

Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(2)

Published: Jan. 8, 2025

As an elemental crystal, anisotropic two-dimensional (2D) tellurium (Te) flakes have recently garnered significant attention due to their exceptional chemical stability, tunable bandgap, low thermal conductivity, and high carrier mobility. To further investigate the properties of Te nanoflakes, a rapid effective method determining crystal axes is essential. In this study, it demonstrated that intensity Raman-active mode in nanoflakes exhibits laser-polarization-dependence, varying periodically with polarization angle. The axis can be identified using angle-resolved polarized Raman spectroscopy. Specifically, A1 highest when incident light along [12¯10] direction lowest [0001] direction. This identification via spectroscopy verified by transmission electron microscopy measurements. addition, theoretical simulations reveal scattering closely associated interference effect multilayer stacking system, as well absorption electron–phonon coupling nanoflakes. discovery not only provides for locating but also offers new insights into phenomenon materials beyond

Language: Английский

Citations

0

Recent Advances in Emerging Polarization‐Sensitive Materials: From Linear/Circular Polarization Detection to Neuromorphic Device Applications DOI Open Access

Rong Lu,

Yanran Li,

Honglin Song

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 19, 2025

Abstract Polarization is an important property of light that provides some additional information about the such as polarizability and phase. With rise polarized photodetectors, detection may bring a new way to better understand information. Recent works have shown polarization detectors demonstrated excellent potential in field neuromorphology, which great significance for further development artificial intelligence. This review comprehensively summarizes present research status detectors, including linearly (LPPDs) circularly (CPPDs). In order assess current state detecting linearly/circularly light, operating principles performance parameters are presented. Next, universal semiconductors used LPPDs CPPDs systematically classified summarized. Based on this, applications fields intelligence, imaging, digital signal processing then reviewed. Finally, challenging opportunities discussed, followed by overview future prospects this promising field.

Language: Английский

Citations

0

Surfactant-free co-solvent exfoliation strategy of semiconducting quasi-1D Nb2Pd3Se8 nanowires DOI Creative Commons
Kyung Hwan Choi, Yeong-Jin Kim,

Jinsu Kang

et al.

CrystEngComm, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Co-solvent exfoliation of quasi-1D van der Waals Nb 2 Pd 3 Se 8 using ethanol–water and isopropanol–water mixtures as a substitute to the conventional, toxic, high-boiling point NMP solvent.

Language: Английский

Citations

0

A broadband polarization-sensitive photodetector and an infrared encoder based on high crystallinity 1D Bi2(Se,S)3 ternary nanowires DOI
Yu Zhang, Wenhao Fan,

Weijie Bai

et al.

Materials Horizons, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

The Bi 2 (Se,S) 3 ternary nanowire photodetector shows excellent broadband photoelectric performance, polarization-sensitive detection and imaging ability. Moreover, the device exhibits an NPC phenomenon which is used to simulate infrared encoder.

Language: Английский

Citations

0

Ultrafast Anisotropic Optical‐Gap Shift in Low‐Symmetry Layered GeS DOI Creative Commons

Sung Bok Seo,

Sanghee Nah, Muhammad T. Sajjad

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 26, 2025

Abstract Low‐symmetry layered materials are emerging as promising platforms for polarization‐driven nanophotonics. Understanding their nonequilibrium photoresponses, especially polarization dependence, is not only essential designing high‐performance devices but also provides new anisotropic light–matter interactions. Here, unique optical‐gap shifts presented in germanium sulfide (GeS) using ultrafast differential transmission (DT) microscopy. Upon pump excitation, bandgap renormalization and lattice heating lead to overall redshifts optical gaps. However, the redshift substantially compensated by carrier‐induced state filling at band edge when probe light polarized along armchair (AC) direction of crystal. In contrast, perpendicular zigzag (ZZ) polarization, minimally because transition predominantly occurs a band‐nesting region, rather than edge. As result, ZZ‐polarization approximately three times larger that AC‐polarization. Furthermore, this dynamically competes with isotropic spectral broadening, forming strong dip DT spectrum, which significantly higher energies over time. It exhibits an ≈80 meV shift ZZ‐polarization—nearly These findings offer insights into dynamics low‐symmetry materials, highlighting potential

Language: Английский

Citations

0

Integrated Polarization-Sensitive Amplification System for Multimode Polarization Imaging DOI
Jie You,

Bu Zhang,

Qiancui Zhang

et al.

ACS Photonics, Journal Year: 2025, Volume and Issue: unknown

Published: April 27, 2025

Language: Английский

Citations

0