Achieving Extraordinary Power Factors in GeTe Epitaxial Films through Carrier Transport Engineering DOI
Qian Xiang, Tuo Chen, Tingting Su

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: March 13, 2025

GeTe-based films have attracted tremendous attention from the thermoelectric community owing to their excellent performance. It is vital reduce hole density and maintain a high carrier mobility for GeTe films; however, this remains significant challenge. To overcome drawback, we succeeded in fabricating high-crystalline quality remarkably improve electrical properties using molecular beam epitaxy under low substrate temperature optimized Te/GeTe flux ratios. The Bi2Te3/GeTe double-layer buffer facilitated reliable fabrication of high-quality films. were synergistically relatively 503 K ratio 0.25/1 that suppress formation Ge vacancies, as well trace amount Sb2Te3 incorporation introduces SbTe substitutional defects. best (GeTe)24/(Sb2Te3)0.25 film acquires very 2.57 × 1020 cm–3 and, simultaneously, 96.53 cm2 V–1 s–1, which leads an extraordinary power factor 3.36 mW m–1 K–2 at room average 4.15 m–1K–2 within 300–475 K, outperforming values previous reports. This work provides valuable insights high-performance promote future applications near temperature.

Language: Английский

Advances and future perspectives in thermoelectric cooling technology DOI
Lei Wang,

Tien-Dung Chu,

Shuaishuai Yuan

et al.

Energy Conversion and Management, Journal Year: 2025, Volume and Issue: 332, P. 119621 - 119621

Published: March 13, 2025

Language: Английский

Citations

3
Lattice Plainification and Intercalation Advances Power Generation and Thermoelectric Cooling in n‐type Bi2(Te, Se)3 DOI Open Access

Jiayi Peng,

Dongrui Liu, Shulin Bai

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Abstract Bismuth telluride (Bi 2 Te 3 ) has been the only commercialized material in thermoelectric cooling and waste heat recovery. However, inferior performance for n‐type Bi (Te, Se) largely restricts practical applications. In this study, additional Ag atoms are introduced utilizing lattice plainification strategy to enhance electrical performance. Observations indicate that situate van der Waals layers, acting as dopants increase carrier concentration, bonding with adjacent intercalating form electron transport channels, while also suppressing formation of vacancies boost mobility, substantially favoring transport. Consequently, 2.79 Se 0.21 I 0.004 +0.3%Ag achieves an excellent room‐temperature ZT ≈1.1, Te2 .79 + 0.4%Ag demonstrates a higher average ≈1.1 at 300–523 K. Furthermore, full‐scale cooler using optimized combined commercial p‐type 0.5 Sb 1.5 achieved maximum temperature difference (Δ T max ≈68.3 K 300 larger Δ ≈84.8 343 Additionally, 0.4%Ag/Bi ‐based power generator realizes conversion efficiency ≈6.0% under ≈240 These results outperform devices, illustrating effectiveness thermoelectrics.

Language: Английский

Citations

1
Scalable synthesis and enhanced thermoelectric properties of Cu-doped and Se-substituted Bi2Te3-based materials via high-pressure sintering DOI

Eun-Ji Meang,

Ye-Ji Shin,

K.-C. Park

et al.

Materials Today Communications, Journal Year: 2025, Volume and Issue: unknown, P. 111830 - 111830

Published: Feb. 1, 2025

Language: Английский

Citations

1
N-type Bi2Se2S Materials with High ZT > 1 engineered by Multi-scale Second Phases Designing DOI
Kun Huang, Ziyuan Wang, Tianyu Zhong

et al.

Journal of the European Ceramic Society, Journal Year: 2025, Volume and Issue: unknown, P. 117192 - 117192

Published: Jan. 1, 2025

Language: Английский

Citations

0
Optimi zing the cooling performance of lead telluride by doping silver DOI

Li Ma,

L. W. Song,

Zhe Zheng

et al.

Solid State Sciences, Journal Year: 2025, Volume and Issue: unknown, P. 107859 - 107859

Published: Feb. 1, 2025

Language: Английский

Citations

0
Band convergence and phonon localization in introducing high thermoelectric performance for Zintl-phase SrLiBi material: A theoretical investigation DOI
T. F. Zheng, Shuwei Tang, Pengfei Zhang

et al.

Applied Materials Today, Journal Year: 2025, Volume and Issue: 43, P. 102670 - 102670

Published: March 10, 2025

Language: Английский

Citations

0
Achieving Extraordinary Power Factors in GeTe Epitaxial Films through Carrier Transport Engineering DOI
Qian Xiang, Tuo Chen, Tingting Su

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: March 13, 2025

GeTe-based films have attracted tremendous attention from the thermoelectric community owing to their excellent performance. It is vital reduce hole density and maintain a high carrier mobility for GeTe films; however, this remains significant challenge. To overcome drawback, we succeeded in fabricating high-crystalline quality remarkably improve electrical properties using molecular beam epitaxy under low substrate temperature optimized Te/GeTe flux ratios. The Bi2Te3/GeTe double-layer buffer facilitated reliable fabrication of high-quality films. were synergistically relatively 503 K ratio 0.25/1 that suppress formation Ge vacancies, as well trace amount Sb2Te3 incorporation introduces SbTe substitutional defects. best (GeTe)24/(Sb2Te3)0.25 film acquires very 2.57 × 1020 cm–3 and, simultaneously, 96.53 cm2 V–1 s–1, which leads an extraordinary power factor 3.36 mW m–1 K–2 at room average 4.15 m–1K–2 within 300–475 K, outperforming values previous reports. This work provides valuable insights high-performance promote future applications near temperature.

Language: Английский

Citations

0