Published: Oct. 9, 2023
We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The chip is fabricated on monolithically active (i.e., Er3+-doped) passive non-doped) thin film lithium niobate (TFLN) substrate in which the cavity constructed two Sagnac loop reflectors TFLN. FP achieves of 126.35 μW a linewidth 33.6 kHz.
Language: Английский
Advances in Physics X, Journal Year: 2024, Volume and Issue: 9(1)
Published: March 12, 2024
The lithium niobate on insulator devices confine the light field to submicron size in monocrystalline niobate, achieve ultra-strong electro-optical interaction and nonlinear optical interaction, thus extend frontiers of photonic research past decade. Such are manufactured using nano-fabrication technology over thin-film wafer, which usually stands a silica layer above substrate material, including low-loss waveguides, modulators, domain engineered structures, high-Q microring resonators electrical filters etc., lead breakthroughs communication, microwave photonics quantum integration.
Language: Английский
Citations
21
Chinese Journal of Lasers, Journal Year: 2024, Volume and Issue: 51(1), P. 0119001 - 0119001
Published: Jan. 1, 2024
近年来,薄膜铌酸锂光子集成技术发展极为迅速,其背后有着深刻的物理、材料、技术原因。单晶薄膜铌酸锂为解决光子集成芯片领域长期存在的低传输损耗、高密度集成以及低调制功耗需求提供了至今为止综合性能最优的解决方案。面向未来的新一代高速光电器件与超大规模光子集成芯片应用,本文回顾了薄膜铌酸锂光子技术的起源及其近期的快速发展,讨论了若干薄膜铌酸锂光子结构的加工技术,并展示了一系列当前性能最优的薄膜铌酸锂光子集成器件与系统,包括超低损耗可调光波导延时线、超高速光调制器、高效率量子光源,以及高功率片上放大器与片上激光器。这些器件以其体积小、质量轻、功耗低、性能好的综合优势,将对整个光电子产业产生难以估量的影响。
Citations
9
Optics Letters, Journal Year: 2023, Volume and Issue: 48(16), P. 4344 - 4344
Published: July 18, 2023
A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. small-signal internal net gain of 27 dB is achieved at a signal wavelength 1532 nm the Er-Yb TFLN pumped by diode laser ≈980 nm. Experimental characterizations reveal suitability fabrication photolithography-assisted chemo-mechanical etching (PLACE) technique and also an Yb-sensitized-Er material. The demonstrated high-gain chip-scale promising for interfacing with established devices, greatly extending spectrum applications.
Language: Английский
Citations
18
ACS Photonics, Journal Year: 2024, Volume and Issue: 11(5), P. 2114 - 2122
Published: April 18, 2024
A light source is an indispensable component in on-chip systems. Compared with hybrid or heterogeneous integrated laser, monolithically laser more suitable for high-density photonic circuits because of the capability large-scale manufacturing, lower active-passive coupling loss, and less test complexity. Recent years have seen spark research on rare-earth ion-doped thin film lithium niobate, demonstrations been made both classical quantum chips. However, low output power limited emitting efficiency hinder application chip-scale based this platform. Here a highly efficient assisted by amplifier proposed experimentally prepared Erbium-doped niobate. slope 0.43% linewidth 47.86 kHz are obtained. The maximum 7.989 μW. Our results show viable solution to improve without changing intrinsic material, our design has potential applications being incorporated functional devices such as optical communications, memory, emission.
Language: Английский
Citations
7
Nanophotonics, Journal Year: 2024, Volume and Issue: 13(15), P. 2839 - 2846
Published: April 4, 2024
Photonic-integrated circuits based on erbium-doped thin film lithium niobate insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband absorption emission of erbium ions necessitates functional integration wavelength filter multiplexer same chip. Here, a low-loss division at resonant pumping wavelengths (∼1480 nm 1530-1560 nm) angled multimode interferometer is realized in fabricated photolithography assisted chemomechanical etching technique. The minimum on-chip insertion losses device are <0.7 dB for both ranges, 3-dB bandwidth >20 measured telecom C-band. Besides, direct visualization interference pattern visible upconversion fluorescence compares well simulated light propagation interferometer. Spectral tuning structural design also demonstrated discussed.
Language: Английский
Citations
5
Optical Materials Express, Journal Year: 2023, Volume and Issue: 13(9), P. 2644 - 2644
Published: Aug. 23, 2023
We demonstrate an on-chip electro-optically tunable Fabry-Perot (FP) cavity laser on Er 3+ -doped thin film lithium niobate (Er: TFLN). The FP consists of two Sagnac loop reflectors at the ends with a loaded quality factor 1.3 × 10 5 and free spectral range 68 pm. fabricated Er: TFLN structure is integrated microelectrodes designed for tuning, continuous wavelength tuning 24 pm around 1544 nm achieved by applying driving voltage from −6 V to 6 V.
Language: Английский
Citations
12
Optics & Laser Technology, Journal Year: 2024, Volume and Issue: 176, P. 110927 - 110927
Published: April 7, 2024
Language: Английский
Citations
4
Chinese Optics Letters, Journal Year: 2024, Volume and Issue: 22(4), P. 041301 - 041301
Published: Jan. 1, 2024
We demonstrate single-mode microdisk lasers in the telecom band with ultralow thresholds on erbium-ytterbium co-doped thin-film lithium niobate (TFLN). The active was fabricated high-Q factors by photolithography-assisted chemomechanical etching. Thanks to co-doping providing high optical gain, loss nanostructuring, and excitation of coherent polygon modes, which suppresses multimode lasing allows spatial mode overlap between pump laser emission operating at 1530 nm wavelength observed an threshold, under a 980-nm-band pump. threshold measured as low 1 µW, is one order magnitude smaller than best results previously reported TFLN microlasers. conversion efficiency reaches 4.06 × 10-3, also highest value
Language: Английский
Citations
4
Optics Letters, Journal Year: 2025, Volume and Issue: 50(7), P. 2370 - 2370
Published: Feb. 24, 2025
We demonstrated an integrated high-Q cascaded Fabry-Perot (FP) resonator on lithium niobate insulator (LNOI) implemented by multi-Sagnac loop reflectors, which was fabricated femtosecond laser photolithography-assisted chemo-mechanical polishing (CMP). Compared with the that comprised only two Sagnac reflectors (SLRs), there is a significant Q factor enhancement in formed multi-SLRs. The loaded of measured to be 1.16 × 106, five-fold improvement compared state art same material platform.
Language: Английский
Citations
0
Nano Letters, Journal Year: 2025, Volume and Issue: unknown
Published: April 11, 2025
Thin film lithium niobate (TFLN) has emerged as a promising platform for modern complete photonic integrated circuits due to its exceptional optical properties. The development of rare-earth-ion-doped TFLN led significant advancements in on-chip microlasers. However, challenges persist developing energy-efficient, low-threshold lasers on TFLN. In this letter, we report heterostructure crystal (PhC) nanobeam cavity with Purcell factor (∼2.4 × 104 μm-3) and β (∼0.23) both enhanced by 2 orders magnitude compared whispering gallery mode (WGM) lasers. first demonstration the single-mode LN PhC laser is presented, achieving record-low lasing threshold (1.19 μW) erbium-doped platform, attributed factor. effect ultralow-threshold been studied lasers, which contributes low-power photonics.
Language: Английский
Citations
0