Published: Oct. 9, 2023
We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The chip is fabricated on monolithically active (i.e., Er3+-doped) passive non-doped) thin film lithium niobate (TFLN) substrate in which the cavity constructed two Sagnac loop reflectors TFLN. FP achieves of 126.35 μW a linewidth 33.6 kHz.
Language: Английский
Optics Letters, Journal Year: 2024, Volume and Issue: 49(11), P. 3018 - 3018
Published: May 1, 2024
We demonstrate a monolithic tunable dual-wavelength laser fabricated on erbium-doped lithium niobate an insulator (Er:LNOI). The enables independent tuning with continuously linear electro-optic (EO)-modulated range of 11.875 GHz at efficiency 0.63 pm/V. Tunable microwave generation within 50 maximum extinction ratio 35 dB is experimentally demonstrated by further exploring the charge accumulation effect in LNOI. design this work paves way for microscale integration devices, presenting significant prospects photonics research and applications.
Language: Английский
Citations
7
Optics & Laser Technology, Journal Year: 2024, Volume and Issue: 176, P. 110927 - 110927
Published: April 7, 2024
Language: Английский
Citations
4
Science China Information Sciences, Journal Year: 2025, Volume and Issue: 68(4)
Published: March 19, 2025
Abstract The generation, processing, and measurement of microwave signals using optoelectronic technology on compact chips represent a significant trend in the evolution photonics (MWP). Among various platforms, silicon has emerged as leading choice, primarily due to its compatibility with established complementary metal-oxide-semiconductor (CMOS) processes. This enables complete integration high-performance radio frequency (RF) links while addressing key challenges such size, power consumption, cost, reliability. In this article, we review recent advancements silicon-integrated photonics, focusing developments device-level system-level applications. At device level, highlight critical innovations silicon-based passive active components towards MWP concerns, including ultralow-loss waveguides, high-fitness micro rings, large-bandwidth/high-linearity electro-optic modulators, hybrid/heterogeneous integrated lasers amplifiers silicon, combs, more. These breakthroughs form basic foundation for advancing implementation. applications, concentrate systems diverse functionalities chips, signal programmable circuits, systems. Finally, discuss current provide insights into future MWP.
Language: Английский
Citations
0
Advanced Photonics Research, Journal Year: 2024, Volume and Issue: unknown
Published: March 30, 2024
Herein, an integrated electro‐optically tunable narrow‐linewidth III–V laser with output power of 738.8 μW and intrinsic linewidth 45.55 kHz at the C band is demonstrated. The cavity constructed using a fiber Bragg grating (FBG) Sagnac loop reflector (TSLR) fabricated on thin‐film lithium niobate. combination FBG TSLR offers advantages single spatial mode, frequency, narrow linewidth, wide wavelength tunability for electrically pumped hybrid laser, which features frequency tuning range 20 GHz efficiency 0.8 V −1 .
Language: Английский
Citations
3
Laser & Optoelectronics Progress, Journal Year: 2024, Volume and Issue: 61(3), P. 0314003 - 0314003
Published: Jan. 1, 2024
飞秒激光直写技术因其精度高、效率高、脉冲持续时间短、峰值功率高且能在多种材料中加工的优点,已被广泛应用于制备各种集成光电器件、光学传感器件。近几年,飞秒激光直写光波导放大器与激光器已经被越来越多的人关注。本文主要介绍飞秒激光直写光波导放大器和激光器的最新研究进展,包括:Type-I型、Type-II型、脊型和可变截面光波导放大器和激光器的波导传输和插入损耗、光放大增益特性,以及波导激光输出特性。最后,对该技术及其相关研究进展进行总结、分析、归纳,并展望该领域未来研究、应用和发展方向。
Citations
1
Materials, Journal Year: 2024, Volume and Issue: 17(18), P. 4453 - 4453
Published: Sept. 11, 2024
Thin film lithium niobate (TFLN) has become a promising material platform for large scale photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip electrically tunable narrow-linewidth lasers have attracted widespread attention recent years due to their significant applications high-speed optical communication, coherent detection, precision metrology, laser cooling, transmission systems, light detection and ranging (LiDAR). However, research on driven, high-power, sources TFLN platforms is still its infancy. This review summarizes the progress compact boosted by hybrid TFLN/III-V semiconductor integration techniques, which will offer alternative solution high performance future PIC industry cutting-edge sciences. The begins with brief introduction of current status external cavity (ECSLs) recently developed photonics. following section presents various ECSLs based chips different structures construct feedback. Some conclusions perspectives are provided.
Language: Английский
Citations
1
Optical Materials Express, Journal Year: 2023, Volume and Issue: 14(1), P. 236 - 236
Published: Oct. 30, 2023
We introduce the feature issue on Reconfigurable Photonic Platforms. This presents a broad collection of contributions from across globe, bringing together different sub-topics fundamentals, new research trends, and applications volatile non-volatile platforms utilizing oxides nitrides, liquid crystals, chalcogenides as well magneto-optical ferroelectric material platforms.
Language: Английский
Citations
1
Photonics, Journal Year: 2024, Volume and Issue: 11(4), P. 329 - 329
Published: April 1, 2024
Industrial-grade optical semiconductor films have attracted considerable research interest because of their potential for wafer-scale mass deposition and direct integration with other optoelectronic wafers. The development thin-film processes that are compatible complementary metal-oxide-semiconductor (CMOS) will be beneficial the improvement chip integration. In this study, a multilayer periodically structured film containing Fabry–Perot cavity was designed, utilizing nine pairs SiN/SiO2 dielectrics. Subsequently, were deposited on Si substrates through inductively coupled plasma chemical vapor (ICPCVD) technique, maintaining low temperature 80 °C. prepared exhibit narrow bandpass characteristics maximum peak transmittance 76% at 690 nm. Scanning electron microscopy (SEM) shows structure has good periodicity. addition, when exposed to p/s polarized light different angles incidence, mode undergoes blueshift, which greatly affects color appearance film. As rises, gradual redshift, while full width half (FWHM) quality factor remain relatively constant.
Language: Английский
Citations
0
ACS Photonics, Journal Year: 2024, Volume and Issue: 11(11), P. 4923 - 4932
Published: Nov. 11, 2024
Erbium-doped thin-film lithium niobate (Er:TFLN) provides efficient solutions for monolithic integrated waveguide amplifiers and lasers, as well the potential electro-optic modulation nonlinear application. However, gain saturation absorption characteristics usually lack dynamic analysis, which is highly valuable various devices. We provide a practical framework correlating erbium signal wavelength/power in erbium-doped amplifier (EDWA) on Er:TFLN platform, demonstrating performance of single-wavelength or multiwavelength amplification. The 10 cm long EDWA achieves 62.76 dB enhancement at 1531 nm, with 22.26 internal net small region. Additionally, significant on-chip output power 16.65 dBm 7.65 realized 1550 nm. Furthermore, theoretical models experimental results have been conducted power, noise figure. In amplification experiments, approximately 20 figure 4.36 are achieved an frequency comb GHz repetition rate. Moreover, exceeding across 45% C-band broadband signals, establishing solid foundation relay applications high-capacity multichannel data transmission systems. dynamics proposed this work can be effectively applied to design optimal EDWAs lasers construct
Language: Английский
Citations
0
Laser & Optoelectronics Progress, Journal Year: 2024, Volume and Issue: 61(19), P. 1913006 - 1913006
Published: Jan. 1, 2024
Citations
0