
Journal of Power Sources, Journal Year: 2024, Volume and Issue: 626, P. 235790 - 235790
Published: Nov. 11, 2024
Language: Английский
Journal of Power Sources, Journal Year: 2024, Volume and Issue: 626, P. 235790 - 235790
Published: Nov. 11, 2024
Language: Английский
Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 501, P. 157392 - 157392
Published: Nov. 12, 2024
Language: Английский
Citations
6Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(2)
Published: Jan. 13, 2025
Two-dimensional (2D) semiconductor materials, such as molybdenum disulfide (MoS2), demonstrate considerable potential for optoelectronic applications, largely due to their atomic thickness, tunable bandgap, and capacity heterostructure integration. Nevertheless, the development of 2D photodetectors that can achieve high responsivity, a fast response time, long-term stability remains significant challenge. The present study is systematic investigation effects top bottom encapsulation with hexagonal boron nitride (h-BN) on performance photodetectors. By employing dry transfer process fabricate high-quality h-BN/MoS2/h-BN structure, we provide effective protection against environmental degradation. encapsulated devices exhibited responsivity increase one two orders magnitude under 532 nm laser illumination, in comparison those without encapsulation. Additionally, rise decay times were markedly reduced, by approximately magnitude, from 0.538 3.43 ms 23.1 99.6 μs, respectively. Moreover, demonstrated sustained over 60-day storage period, remaining faster than pre-encapsulation levels. This highlights h-BN enhancing both photodetectors, advancing more reliable devices.
Language: Английский
Citations
0Published: Jan. 1, 2024
Language: Английский
Citations
0Journal of Power Sources, Journal Year: 2024, Volume and Issue: 626, P. 235790 - 235790
Published: Nov. 11, 2024
Language: Английский
Citations
0