JOURNAL OF CHARACTERIZATION,
Journal Year:
2023,
Volume and Issue:
3(3), P. 116 - 127
Published: Jan. 1, 2023
Nanostructured
solid-state
devices
demonstrate
prominent
electronic
transport
properties
and
thus
represent
powerful
building
blocks
for
a
wide
range
of
analog
digital
integrated
circuits
systems.In
this
study,
the
integration
side-contacted
field
effect
diode
(S-FED)
with
silicon
nanowire
concept
is
pursued
to
create
device
that
maintains
substantial
aspect
ratio
while
delivering
suitable
execution.The
FED
(NW-SFED),
referred
as
apparatus,
exhibits
capability
achieve
an
exceptionally
high
ON/OFF
current
4×10
8
,
allowing
efficient
switching
between
ON
OFF
states.While
downscaling
planar
CMOS
technology
has
faced
severe
constraints,
characteristic
featured
figure
merit
NW-SFED
device.Accordingly,
can
also
be
used
in
coordinated
device-circuit
co-design
framework
promising
candidate
mitigate
noise,
delay,
energy.Herein,
quantitative
evaluation
NW-SFED's
performance
conducted
utilizing
semiconductor
drift-diffusion
solver
explore
how
variations
channel
length,
width,
well
dimensions
n
+
p
doped
regions
source
drain,
respectively,
influence
its
operational
characteristics.The
impact
spacer
length
width
on
fabrication
turned
out
negligible.In
contrast,
thickness
emerged
critical
parameter
process.
Journal of Materials Chemistry B,
Journal Year:
2023,
Volume and Issue:
12(5), P. 1168 - 1193
Published: Dec. 21, 2023
A
biosensor
is
a
device
that
reacts
with
the
analyte
to
be
analyzed,
detects
its
concentration,
and
generates
readable
information,
which
plays
an
important
role
in
medical
diagnosis,
detection
of
physiological
indicators,
disease
prevention.
Nanomaterials
have
received
increasing
attention
fabrication
improvement
biosensors
due
their
unique
physicochemical
optical
properties.
In
this
paper,
properties
nanomaterials
such
as
size
effect,
electrical
properties,
advantages
field
biosensing
are
briefly
summarized,
application
can
effectively
improve
sensitivity
reduce
limit
biosensors.
The
commonly
used
gold
nanoparticles
(AuNPs),
carbon
nanotubes
(CNTs),
quantum
dots
(QDs),
graphene,
magnetic
nanobeads
for
applications
also
reviewed.
Besides,
two
main
types
using
involved
construction
working
principles
described,
toxicity
biocompatibility
future
direction
nanomaterial
discussed.
IEEE Access,
Journal Year:
2024,
Volume and Issue:
12, P. 50556 - 50577
Published: Jan. 1, 2024
This
review
article
presents
a
journey
from
Fin-shaped
field
effect
transistor
(FinFET)
to
gate-all-around
multi-bridge
channel
(GAA
MBCFET)
technology,
unraveling
the
evolution
of
semiconductor
architectures.
provides
concise
yet
insightful
overview
development
FinFET,
exploring
modified
architectures,
current
trends,
and
associated
constraints.
The
growing
importance
other
materials
instead
Si
in
FinFET
or
technologies
has
been
studied
detail.
explores
an
emerging
technology
called
'GAA
MBCFET',
highlighting
its
advantages
over
FinFET.
It
also
delves
into
notable
drawbacks
complex
fabrication
challenges
with
upcoming
GAA
MBCFET
technology.
Sensors,
Journal Year:
2025,
Volume and Issue:
25(3), P. 959 - 959
Published: Feb. 5, 2025
Over
the
past
decade,
large-scale
spread
of
influenza
viruses
has
posed
an
increasing
burden
on
public
health.
The
effective
screening
agents
requires
a
fast,
precise,
on-site
and
easy-to-operate
method.
Unfortunately,
current
methods
face
challenges
in
speed
accuracy,
especially
complex
settings.
Here,
this
work
develops
nucleoprotein
antibody-modified
graphene
field-effect
transistor
(NPAb-GFET)
for
rapid
highly
precise
detection
A
viruses.
functionalized
monoclonal
antibodies
capture
virus
within
100
×
10−9
s
sensing
surface.
Therefore,
developed
NPAb-GFET
achieves
average
response
time
72.1
when
detecting
clinical
samples.
Furthermore,
testing
106
throat
swab
samples
exhibits
accuracy
99.1%.
This
finding
provides
valuable
diagnostic
tool
control
viruses,
accelerating
population-wide
other
epidemics.
Biosensors,
Journal Year:
2025,
Volume and Issue:
15(2), P. 119 - 119
Published: Feb. 18, 2025
This
review
into
recent
advancements
in
silicon-based
technology,
with
a
particular
emphasis
on
the
biomedical
applications
of
silicon
sensors.
Owing
to
their
diminutive
size,
high
sensitivity,
and
intrinsic
compatibility
electronic
systems,
sensors
have
found
widespread
utilization
across
healthcare,
industrial,
environmental
monitoring
domains.
In
realm
sensing,
has
demonstrated
significant
potential
enhance
human
health
outcomes
while
simultaneously
driving
progress
microfabrication
techniques
for
multifunctional
device
development.
The
systematically
examines
versatile
roles
fabrication
electrodes,
sensing
channels,
substrates.
Silicon
electrodes
are
widely
used
electrochemical
biosensors
glucose
neural
activity
recording,
channels
field-effect
transistor
enable
detection
cancer
biomarkers
small
molecules.
Porous
substrates
applied
optical
label-free
protein
pathogen
detection.
Key
challenges
this
field,
including
interaction
biomolecules,
economic
barriers
miniaturization,
issues
related
signal
stability,
critically
analyzed.
Proposed
strategies
address
these
improve
sensor
functionality
reliability
also
discussed.
Furthermore,
article
explores
emerging
developments
biosensors,
particularly
integration
wearable
technologies.
pivotal
role
artificial
intelligence
(AI)
enhancing
performance,
functionality,
real-time
capabilities
is
highlighted.
provides
comprehensive
overview
current
state,
challenges,
future
directions
field
Sensors,
Journal Year:
2025,
Volume and Issue:
25(1), P. 236 - 236
Published: Jan. 3, 2025
Impedance-based
biosensing
has
emerged
as
a
critical
technology
for
high-sensitivity
biomolecular
detection,
yet
traditional
approaches
often
rely
on
bulky,
costly
impedance
analyzers,
limiting
their
portability
and
usability
in
point-of-care
applications.
Addressing
these
limitations,
this
paper
proposes
an
advanced
system
integrating
Silicon
Nanowire
Field-Effect
Transistor
(SiNW-FET)
biosensor
with
high-gain
amplification
circuit
1D
Convolutional
Neural
Network
(CNN)
implemented
FPGA
hardware.
This
attempt
combines
SiNW-FET
FPGA-implemented
deep
learning
noise
reduction,
creating
compact
capable
of
real-time
viral
detection
minimal
computational
latency.
The
integration
CNN
model
hardware
adaptive,
non-linear
filtering
sets
design
apart
from
conventional
by
achieving
high
accuracy
low
power
consumption
portable
format.
FPGA-based
reduction
offers
unique
approach,
prior
techniques
biosensors
typically
linear
or
digital
smoothing,
which
lack
adaptive
capabilities
complex,
patterns.
By
introducing
the
FPGA,
architecture
enables
real-time,
high-fidelity
preserving
signal
characteristics
without
compromising
processing
speed.
Notably,
findings
presented
work
are
based
exclusively
comprehensive
simulations
using
COMSOL
MATLAB,
no
physical
prototypes
biomarker
experiments
were
conducted.
biosensor,
functionalized
antibodies
specific
to
antigens,
detects
shifts
caused
antibody–antigen
interactions,
providing
highly
sensitive
platform
detection.
A
folded-cascade
amplifier
enhances
Signal-to-Noise
Ratio
(SNR)
approximately
70
dB,
verified
through
MATLAB
simulations.
Additionally,
is
employed
out
patterns
approximate
75%
across
broad
frequency
range.
model,
Altera
DE2
high-throughput,
low-latency
processing,
making
viable
Performance
evaluations
confirmed
proposed
system’s
capability
enhance
SNR
significantly
while
maintaining
energy-efficient
suitable
diagnostics.
integrated
thus
provides
powerful
solution
high-precision,
continuous
health
monitoring,
advancing
role
accessible
PLoS ONE,
Journal Year:
2025,
Volume and Issue:
20(1), P. e0316576 - e0316576
Published: Jan. 17, 2025
We
have
successfully
prepared
a
significant
number
of
nanowires
from
non-toxic
silicon
sources.
Compared
to
the
SiO
source
used
in
most
other
articles,
our
preparation
method
is
much
safer.
It
provides
simple
and
harmless
new
for
nanowires.
SiNWs
(Silicon
nanowires),
as
novel
type
nanomaterial,
exhibit
many
outstanding
properties,
including
quantum
confinement
effect,
tunneling,
Coulomb
blocking
exceptional
electrical
optical
properties.
The
study
therefore
highly
significant.
In
this
paper,
2
powder,
Si
B
O
3
powder
were
utilized
raw
materials
prepare
with
diameters
ranging
30–60
nm
lengths
several
hundred
nanometers
tens
microns.
resulting
uniform
morphology,
smooth
surfaces,
are
produced
considerable
yield.
morphology
structure
characterized
using
XRD,
SEM,
HRTEM,
SAED,
EDS,
Raman
spectroscopy.
results
indicate
that
pure,
uniform,
polycrystalline
structure.
PL
(photoluminescence)
spectra
show
pronounced
UV
emission
peak
at
346
nm,
optimal
excitation
wavelength
being
234
nm.
Measurements
Keithley
2601B
demonstrate
resistivity
4.292
×
10
8
Ω·cm.
Further
studies
reveal
properties
influenced
by
their
size
surface
state.
These
findings
implications
understanding
luminescent
mechanism
potential
applications
optoelectronics
biomedicine.
This
paper
serves
reference
characterization
SiNWs,
highlighting
use
various
applications,
biomedical
imaging,
sensors,
optoelectronic
devices.
Nano-Micro Letters,
Journal Year:
2025,
Volume and Issue:
17(1)
Published: Feb. 19, 2025
Abstract
Gate-all-around
field-effect
transistors
(GAA-FETs)
represent
the
leading-edge
channel
architecture
for
constructing
state-of-the-art
high-performance
FETs.
Despite
advantages
offered
by
GAA
configuration,
its
application
to
catalytic
silicon
nanowire
(SiNW)
channels,
known
facile
low-temperature
fabrication
and
high
yield,
has
faced
challenges
primarily
due
issues
with
precise
positioning
alignment.
In
exploring
this
promising
avenue,
we
employed
an
in-plane
solid–liquid-solid
(IPSLS)
growth
technique
batch-fabricate
orderly
arrays
of
ultrathin
SiNWs,
diameters
D
NW
=
22.4
±
2.4
nm
interwire
spacing
90
nm.
An
in
situ
channel-releasing
been
developed
well
preserve
geometry
integrity
suspended
SiNW
arrays.
By
optimizing
source/drain
contacts,
GAA-FET
devices
have
successfully
fabricated,
based
on
these
channels
first
time,
yielding
a
on/off
current
ratio
10
7
steep
subthreshold
swing
66
mV
dec
−1
,
closing
performance
gap
between
SiNW-FETs
GAA-FETs
fabricated
using
advanced
top-down
EBL
EUV
lithography.
These
results
indicate
that
IPSLS
SiNWs
can
also
serve
as
ideal
1D
scalable
GAA-FETs,
suited
monolithic
3D
integrations.
Biosensors,
Journal Year:
2025,
Volume and Issue:
15(4), P. 206 - 206
Published: March 22, 2025
This
paper
reviews
various
design
approaches
for
sensing
schemes
that
utilize
silicon
nanowire
(SiNW)
ion-sensitive
field-effect
transistors
(ISFETs)
pH-sensing
applications.
SiNW
ISFETs
offer
advantageous
characteristics,
including
a
high
surface-to-volume
ratio,
fast
response
time,
and
suitability
integration
with
complementary
metal
oxide
semiconductor
(CMOS)
technology.
review
focuses
on
ISFET-based
biosensors
in
three
key
aspects:
(1)
major
fabrication
processes
device
structures;
(2)
theoretical
analysis
of
performance
parameters
readout
circuits
such
as
sensitivity,
linearity,
noise
immunity,
output
range
different
system
configurations;
(3)
an
overview
existing
quantitative
evaluations
N-type
P-type
current-mirror-based
circuits,
highlighting
their
strengths
limitations.
Finally,
this
proposes
modified
scheme
integrating
operational
amplifier
negative
feedback
network
to
overcome
the
low
sensitivity
conventional
circuits.
enhances
gain
control,
immunity
while
maintaining
stability.
These
advancements
are
expected
contribute
advancement
current
state-of-the-art