Wireless Thermochromic Platform Based on Au/SiO₂ Photonic Crystals for Operando Monitoring of Catalyst Sintering with Machine Learning

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 10, 2025

Operando monitoring of the catalyst sinter-degree during reactions is essential for achieving a stable, safe, and efficient chemical engineering process. This work introduces wireless thermochromic platform that utilizes machine learning to correlate color changes with catalysts identify hot spots reactions. After being decorated sub-2 nm Au clusters, SiO2 photonic crystals were endowed distinct change from inherent blue hue distinctive red shade associated due gradual growth clusters over wide temperature range 25 900 °C. With assistance an artificial neural network, robust correlation was established between observed species. training, smart Au/SiO2 achieved self-visualization species within 12.4 μm × μm, CO oxidation. Moreover, intelligent noninvasive can be constructed by patterning into quick response codes, real-time distribution at micro-region scale (208 208 μm) 5 ms The enables data transmission facilitates programmable warning abnormal in reactors. serves as technical reserve future research on development advanced offers further insight

Language: Английский

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Low Surface Recombination Velocity and Enhanced Photocarrier Dynamics in Bi₂O₂Se Nanosheets

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 20, 2025

Abstract Among 2D materials, the layered semiconductor Bi 2 O Se stands out due to its unique electrostatically bonded structure without a van der Waals gap, making it promising candidate for various electronic, optoelectronic, and photonic applications. This potential is largely attributed exceptional properties, including ultrahigh electron mobility stability. While surface effects are known significantly influence carrier transport in low‐dimensional impact of dimensionality on photocarrier dynamics remains unexplored. In this study, ultrafast broadband pump–probe spectroscopy utilized directly investigate recombination as key factor governing Se. The findings reveal bulk lifetime 1.6 ns surface‐recombination velocity ( S ) 1.84 ± 0.02 × 10 3 cm s −1 , which lower than that observed other unpassivated 3D semiconductors. low value suggests avenue enhanced high efficiency, even at ultrathin nanoscales. These observations provide insight into critical role material thickness device performance highlight advantages passivation, thereby broadening application next‐generation electronics, optoelectronics, devices.

Language: Английский

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High‐Performance Bi₂O₃/SnS–SnO₂/p‐Si Heterojunction Broadband Photodetector with Low Dark Current and Fast Response

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: March 24, 2025

Currently, constructing multiheterojunction photodetectors by using reasonable band arrangement between different materials is an effective means to enhance the photodetector's optical response, broaden its working range, and reduce response time. In this investigation, a novel heterojunction structure of Bi 2 O 3 /SnS–SnO /p‐Si (BSS) fabricated via modified two‐step sol–gel spin coating technique. Comparative analysis with original SnS–SnO binary (BS) heterojunctions reveals that ternary BSS photodetector demonstrates broad‐spectrum light reduced dark current, operating within wavelength range from 254 1200 nm. Under bias voltage −5 V illumination at 780 nm, device exhibits photocurrent 1.42 × 10 A low current −10 A, yielding impressive switching ratio 2.91 4 . Additionally, time 0.04 s, which 123 times faster than device. Furthermore, under nm illumination,the responsivity R detection sensitivity are measured be 0.14 W −1 1.13 12 Jones, respectively. These findings underscore rational alignment pivotal for their exceptional performance highlights potential advancement as broadband high‐performance photodetector.

Language: Английский

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Dimensionality and Charge States in CeO2 Surface Defects: A Theoretical Analysis Using Reactivity/Stability Descriptors with NO as the Test Molecule

Materials Today Communications, Journal Year: 2025, Volume and Issue: unknown, P. 112358 - 112358

Published: March 1, 2025

Language: Английский

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Structural, vibrational, elastic, and electronic properties of MgO cluster-assembled monolayers

Physica E Low-dimensional Systems and Nanostructures, Journal Year: 2025, Volume and Issue: 172, P. 116275 - 116275

Published: April 17, 2025

Language: Английский

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Electronic Transport and Interface Properties of FeOCl-type Monolayer SnNCl for Flexible Nanodevices

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 106524 - 106524

Published: April 1, 2025

Language: Английский

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Strain Engineering of Anisotropic Electronic, Transport, and Photoelectric Properties in Monolayer Sn2Se2P4

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(9), P. 679 - 679

Published: April 30, 2025

In this study, we demonstrate that the Sn2Se2P4 monolayer exhibits intrinsic anisotropic electronic characteristics with strain-synergistic modulation of carrier transport and optoelectronic properties, as revealed by various levels density functional theory calculations combined non-equilibrium Green’s function method. The reveal a-axis uniaxial compression induces an indirect-to-direct bandgap transition (from 1.73 eV to 0.97 eV, calculated HSE06), reduces hole effective mass ≥70%, amplifies current 684%. Conversely, expansion (+8%) boosts ballistic (a/b-axis ratio > 105), rivaling black phosphorus. Notably, a striking negative differential conductance arises maximum Ipeak/Ivalley in order 105 under 2% along b-axis monolayer. Visible-range absorption coefficients (~105 cm−1) are achieved, where −4% strain elevates photocurrent (6.27 μA mm−2 at 2.45 eV) external quantum efficiency (39.2%) beyond many 2D materials benchmarks. Non-monotonic strain-dependent peaks 2.00 correlate reduction patterns, confirming mobility governing parameter for photogenerated charge separation. These results establish multifunctional material enabling strain-tailored anisotropy logic transistors, resistors, photovoltaic devices, while guiding future investigations on environmental stabilization heterostructure integration toward practical applications.

Language: Английский

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Oxygen Vacancy Induced 2D Bi₂SeO₅ Non-Volatile Memristor for 1T1R Integration

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: May 12, 2025

Two-dimensional (2D) layered Bi2SeO5, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi2SeO5 nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced memristors exhibit superior nonvolatile characteristics. Specifically, these an ultrahigh on/off ratio (up to 1010), extremely low off-state current (10-12 A), and rapid switching speeds (160 ns SET 110 RESET). Moreover, the demonstrates excellent retention endurance capabilities. Additionally, by integrating SnS2 transistors, 1T1R (one transistor one resistor) structure was constructed, which simplifies circuit design enables AND gate logic multivalue storage functions. This work establishes solid foundation practical application of high-performance in future high-density-integration fast in-memory computing systems.

Language: Английский

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Hybrid bronzes: mixed-valence organic–inorganic metal oxides as a tunable material platform

Chemical Science, Journal Year: 2023, Volume and Issue: 14(39), P. 10756 - 10767

Published: Jan. 1, 2023

We demonstrate that mixed-valence layered organic-inorganic metal oxides of the form (L)zHxMO3 (L = neutral ligand; M Mo, W; z 0.5, 1; 0 < x 2), which we call hybrid bronzes, can be readily synthesized through mild solution-state self-assembly reactions to integrate stability and electronic utility inorganic oxide bronzes with chemical diversity functionality organic molecules. use single-crystal powder X-ray diffraction coupled X-ray, electronic, vibrational spectroscopies show products aqueous pre-, mid-, or post-synthetic reduction are versions highly crystalline oxides. Pillaring, bilayered, canted bilayered arrangements molecular arrays relative sheets dictated by judicious choice ligands also incorporate chemical, redox, photoactive handles. Significantly, bond-valence sum analysis diffuse reflectance spectroscopy indicate relatively delocalized behavior four-point variable-temperature electrical transport measurements have comparable conductivity their all-inorganic parent compounds. This work establishes a solution-processable, inexpensive, air- water-stable, non-toxic material family whose bands tuned doped, thereby positioning address myriad challenges.

Language: Английский

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Wafer-scale synthesis of two-dimensional materials for integrated electronics

Chip, Journal Year: 2023, Volume and Issue: 3(1), P. 100080 - 100080

Published: Dec. 20, 2023

Two-dimensional (2D) van der Waals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties high compatibility with traditional microfabrication techniques. Their wafer-scale synthesis has become a critical challenge for large-scale integrated applications. Although approaches some 2D been extensively explored, preparation high-quality thin films well-controlled thickness remains big challenge. This review focuses on applications in electronics. Firstly, several representative layered including crystal structures unique electronic were introduced. Then, current strategies at wafer scale, which are divided into "top-down" "bottom-up", reviewed depth. Afterwards, electrical optoelectronic devices discussed. Finally, challenges future prospects presented. It is hoped that this will provide comprehensive insightful guidance

Language: Английский

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