Research Square (Research Square),
Journal Year:
2024,
Volume and Issue:
unknown
Published: Oct. 31, 2024
Abstract
Photomultiplication-type
organic
photodetectors
(PM-OPDs)
offer
signal
amplification,
ideal
for
faint
light
detection
and
simplified
systems,
but
typically
face
slow
response
speeds
high
dark
currents.
In
contrast,
photovoltaic-type
OPDs
(PV-OPDs)
provide
fast
detectivity
(D*)
have
limited
photoresponse.
This
study
introduces
a
non-fullerene
acceptor,
BFDO-4F,
into
the
active
layer
to
create
trap
states
photogenerated
electron
capture.
The
resulting
device
exhibits
dual-mode
characteristics
is
bias-switchable
between
PV
PM-modes.
It
achieves
D*
of
1.92×10¹²
Jones
times
2.83/4.43
µs
in
PV-mode,
exceptional
EQEs
up
3484%
PM-mode.
Notably,
an
on-chip
self-powered
module
featuring
PV-mode
pixels
driving
PM-mode
pixel
demonstrated,
yielding
photocurrent
approximately
five
higher
than
reference
device.
approach
establishes
new
framework
developing
multifunctional,
bias-switchable,
OPDs,
unlocking
diverse
opportunities
highly
integrated
advanced
sensing
applications.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: July 18, 2024
High-quality
imaging
units
are
indispensable
in
modern
optoelectronic
systems
for
accurate
recognition
and
processing
of
optical
information.
To
fulfill
massive
complex
tasks
the
digital
age,
devices
with
remarkable
photoresponsive
characteristics
versatile
reconfigurable
functions
on
a
single-device
platform
demand
but
remain
challenging
to
fabricate.
Herein,
an
AlGaN/GaN-based
double-heterostructure
is
reported,
incorporated
unique
compositionally
graded
AlGaN
structure
generate
channel
polarization-induced
two-dimensional
electron
gas
(2DEGs).
Owing
programmable
feature
2DEGs
by
combined
gate
drain
voltage
inputs,
particular
capability
separation,
collection
storage
under
different
light
illumination,
phototransistor
shows
multifunctional
behaviors
superior
characteristics.
A
self-powered
mode
responsivity
over
100
W
Advanced Science,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 22, 2025
Abstract
Metal
halide
perovskites
(MHPs)
are
commonly
used
in
polarization‐sensitive
photodetectors
(PDs)
for
applications
such
as
polarization
imaging,
remote
sensing,
and
optical
communication.
Although
various
methods
exist
to
adjust
the
photocurrent,
a
universal
effective
approach
continuous
control
of
MHPs’
optoelectronic
polarized
properties
is
lacking.
A
strategy
electrically
modulate
ratio
(PR)
self‐powered
PDs
using
ferro‐pyro‐phototronic
effect
(FPPE)
2D
presented.
By
varying
amplitude
direction
ferroelectric
voltage,
built‐in
electric
field
heterojunction
can
be
modulated,
allowing
controllable
PR
regulation
adjustable
characteristics.
Moreover,
pyroelectric
photoresponses
realized,
significantly
enhancing
responsivity,
response
speed
PDs.
Both
currents
photocurrents
exhibit
obvious
This
method's
versatility
demonstrated
by
creating
three
additional
quasi‐2D
MHP
ferroelectric‐based
polarized‐sensitive
proof‐of‐concept
encrypted
communication
achieved
UV‐sensitive
light‐sensing
units.
These
findings
highlight
FPPE's
potential
enhance
device
control,
enabling
high‐performance
photodetection.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 6, 2025
Photomultiplication-type
organic
photodetectors
(PM-OPDs)
provide
for
signal
amplification,
ideal
detecting
faint
light,
and
simplifying
detection
systems.
However,
current
designs
often
suffer
from
slow
response
speed
elevated
dark
current.
Conversely,
photovoltaic-type
(PV-OPDs)
fast
high
specific
detectivity
(D*)
but
have
limited
photoresponse.
This
study
presents
the
synthesis
incorporation
of
a
non-fullerene
acceptor,
BFDO-4F,
into
active
layer
to
introduce
trap
states
capturing
photogenerated
electrons.
The
resulting
device
exhibits
dual-mode
characteristic
is
bias-switchable
between
PV
PM-modes.
In
PV-mode,
OPDs
achieve
D*
1.92
×
10¹2
Jones
time
2.83/4.43
µs.
PM-mode,
exhibit
exceptional
external
quantum
efficiency
(EQE)
up
3484%
1.13
Jones.
An
on-chip
self-powered
module
with
PV-mode
pixels
driving
PM-mode
pixel
demonstrated,
yielding
photocurrent
approximately
five
times
higher
than
reference
device.
approach
paves
way
developing
multifunctional
OPDs,
suitable
various
applications.
physica status solidi (a),
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 17, 2025
This
study
explores
the
fabrication
of
flexible
amorphous
gallium
oxide
(a‐Ga
2
O
3
)
solar‐blind
ultraviolet
photodetector
using
a
facile
inkjet‐printing
technology.
Various
characterization
techniques
are
employed
to
examine
impact
annealing
temperature
on
properties
a‐Ga
layer
and
photodetector.
The
results
indicate
growth
devoid
crystalline
diffraction
peaks.
When
increases
from
350
°C
550
°C,
significant
reduction
in
concentration
oxygen
vacancy
bandtail
states
within
is
observed.
Concurrently,
bandgap
widens,
radiation
recombination
suppressed.
fabricated
photodetectors
demonstrate
responsiveness
light.
As
rises,
exhibit
reduced
dark
current
improved
photo‐to‐dark
ratio,
responsivity,
detectivity,
rejection
ratio.
A
pulse
phenomenon
appears
time‐dependent
photoresponse
curves.
reveals
feasibility
effectiveness
method
for
preparing
photodetectors.
Advanced Optical Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 1, 2025
Abstract
Benefiting
from
the
broken
symmetry,
2D
3R‐ZnIn
2
S
4
exhibits
unique
optoelectronic
properties
and
has
gradually
attracted
attention.
Herein,
optical
ultrafast
exciton
dynamics
in
nanoflakes
are
systematically
investigated.
The
thickness‐dependent
Raman,
absorption,
photoluminescence
(PL)
spectra
measured
to
reveal
importance
of
thickness
engineering
tuning
.
Especially,
characteristics
self‐trapped
excitons
(STEs),
featuring
a
broad
PL
spectrum
significant
Stokes
shift
relative
absorption
bandgap,
which
can
be
attributed
inversion
as
confirmed
by
second
harmonic
generation
(SHG).
existence
STEs
3R‐ZnIn₂S
endows
it
with
carrier
dynamics.
wavelength‐dependent
SHG
demonstrate
that
nonlinear
response
surpass
constraints
odd/even
layer
parity
achieve
broadband
spectral
response.
Additionally,
revealed
consist
two
components:
fast
non‐radiative
recombination
process
(≈200
ps)
slower
radiative
(≈1
ns).
Thickness‐dependent
spectroscopy
unveils
remain
stable
across
varying
thicknesses,
highlighting
consistency
lifetimes.
These
findings
potential
for
applications,
opening
new
pathways
its
application
advanced
technologies.
ACS Applied Materials & Interfaces,
Journal Year:
2024,
Volume and Issue:
16(36), P. 48576 - 48584
Published: Aug. 29, 2024
The
growing
need
for
wearable
electronics
and
self-powered
electronic
devices
has
driven
the
successful
development
of
two-dimensional
(2D)
photodetectors
using
photovoltaic
effect
Schottky
p-n
junctions.
However,
there
is
an
urgent
to
develop
multifunctional
capable
harvesting
energy
from
different
sources
overcome
their
limitations
in
efficiency
cost.
While
pyro-phototronic
been
shown
effectively
influence
optoelectronic
processes
heterojunctions,
number
reported
heterojunctions
exhibiting
interfacial
pyroelectricity
still
limited,
responsivity
detectivity
based
on
such
tend
be
low.
In
this
study,
a
photodetector
Au/WSe
International Journal of Extreme Manufacturing,
Journal Year:
2024,
Volume and Issue:
7(1), P. 012011 - 012011
Published: Oct. 15, 2024
Abstract
Today,
energy
is
essential
for
every
aspect
of
human
life,
including
clothing,
food,
housing
and
transportation.
However,
traditional
resources
are
insufficient
to
meet
our
modern
needs.
Self-powered
sensing
devices
emerge
as
promising
alternatives,
offering
sustained
operation
without
relying
on
external
power
sources.
Leveraging
advancements
in
materials
manufacturing
research,
these
can
autonomously
harvest
from
various
In
this
review,
we
focus
the
current
landscape
self-powered
wearable
sensors,
providing
a
concise
overview
harvesting
technologies,
conversion
mechanisms,
structural
or
material
innovations,
storage
platforms.
Then,
present
experimental
advances
different
sources,
showing
their
underlying
potential
acquisition.
Furthermore,
discuss
applications
flexible
sensors
diverse
fields
such
medicine,
sports,
food.
Despite
significant
progress
field,
widespread
commercialization
will
necessitate
enhanced
sensor
detection
abilities,
improved
design
factors
adaptable
devices,
balance
between
sensitivity
standardization.
Journal of Physics D Applied Physics,
Journal Year:
2024,
Volume and Issue:
58(6), P. 063003 - 063003
Published: Nov. 8, 2024
Abstract
Deep
ultraviolet
(DUV)
photodetectors
play
important
roles
in
the
modern
semiconductor
industry
due
to
their
diverse
applications
critical
fields.
Wide
bandgap
Ga
2
O
3
is
considered
as
one
promising
material
for
highly
sensitive
DUV
photodetectors.
However,
high
responsivity
of
always
comes
at
expense
its
response
speed.
Material
engineering
high-quality
materials
can
optimize
photoresponse
performance
but
cost
much
more
complex
process.
Structure
efficiently
improve
based
on
various
physical
mechanisms.
Owing
increased
modulation
probabilities,
part
schemes
structure
even
alleviate
tough
requirements
quality
high-performance
This
article
reviews
recent
efforts
optimizing
through
engineering.
Firstly,
nanostructures
and
metasurface
structures
with
nanometer
size
effect
are
discussed.
In
addition,
junction
photodetectors,
which
effectively
promote
carrier
separation
depletion
region,
summarized
a
classification
Schottky
junction,
heterojunction,
phase
etc.
Besides,
avalanche
photodiodes,
offering
ultra-high
gain
responsivity,
focused
prototype
commercialization.
Furthermore,
field
phototransistors,
scalability
low
power
have
been
well
proven,
analyzed
detail.
Moreover,
auxiliary-field
configurations
extra
tunable
dimensions
introduced.
Finally,
we
conclude
this
review
discuss
main
challenges
from
our
perspective.
