Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

ACS Nano, Journal Year: 2022, Volume and Issue: 16(6), P. 8651 - 8661

Published: April 22, 2022

Optoelectronic synaptic transistors with hybrid heterostructure channels have been extensively developed to construct artificial visual systems, inspired by the human system. However, optoelectronic taking full advantages of superior behaviors, low-cost processes, low-power consumption, and environmental benignity remained a challenge. Herein, we report fully printed, high-performance transistor based on heterostructures heavy-metal-free InP/ZnSe core/shell quantum dots (QDs) n-type SnO2 amorphous oxide semiconductors (AOSs). The elaborately designed heterojunction improves separation efficiency photoexcited charges, leading high photoresponsivity tunable weight changes. Under coordinated modulation electrical optical modes, important biological including excitatory postsynaptic current, short/long-term plasticity, paired-pulse facilitation, were demonstrated low power consumption (∼5.6 pJ per event). QD/SnO2 vision system illustrated significantly improved accuracy 91% in image recognition, compared that bare counterparts (58%). Combining outstanding characteristics both AOS materials structures, this work provides printable, low-cost, high-efficiency strategy achieve advanced synapses for neuromorphic electronics intelligence.

Language: Английский

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Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

Science and Technology of Advanced Materials, Journal Year: 2023, Volume and Issue: 24(1)

Published: March 3, 2023

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption current explosion of data. Brain-inspired neuromorphic computing can break inherent limitations computers. Neuromorphic devices are key hardware units chips implement intelligent computing. In recent years, development optogenetics photosensitive materials has provided new avenues research devices. emerging optoelectronic have received a lot attentions because they shown great potential in field visual bionics. this paper, we summarize latest bionic applications synaptic memristors transistors based on different materials. basic principle bio-vision formation first introduced. Then device structures operating mechanisms discussed. Most importantly, progresses various fields perception described. Finally, problems challenges summarized, future bionics also proposed.

Language: Английский

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Quantum Dot‐Enhanced Dual‐Modality Heterojunction Optoelectronic Synapse for Neuromorphic Computing

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 28, 2025

Abstract The advancement of optoelectronic sensing synapse devices, which integrate multiple sensory modalities and achieve the efficiency biological vision systems, is crucial for field artificial systems. This work incorporates CdSe/CdSe x S 1‐x quantum dots with In 2 O 3 semiconductor into a heterojunction via low‐cost fully solution‐based process to endow synaptic transistor dual‐modality lights electricity. Optoelectronic transistors exhibit sensitivity broad spectrum light, encompassing wavelengths ranging from 395 808 nm, in addition their responsiveness electrical signals. information processing therefore improved by integration senses. Additionally, doping lithium ions dielectric layer, gate capacitance increased over ten times significantly devices channel modulation retention characteristics. An visual perception demo based on Quantum Dot‐Enhanced ransistors (QDET) well presented showcase practical application pattern recognition QDETs offer promising platform energy‐efficient, high‐performance neuromorphic

Language: Английский

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Inorganic–Organic Hybrid Phototransistor Array with Enhanced Photogating Effect for Dynamic Near-Infrared Light Sensing and Image Preprocessing

Nano Letters, Journal Year: 2022, Volume and Issue: 22(13), P. 5434 - 5442

Published: June 29, 2022

Narrow-band-gap organic semiconductors have emerged as appealing near-infrared (NIR) sensing materials by virtue of their unique optoelectronic properties. However, limited carrier mobility impedes the implementation large-area, dynamic NIR sensor arrays. In this work, high-performance inorganic-organic hybrid phototransistor arrays are achieved for sensing, taking advantage high electron In2O3 and strong absorption a BTPV-4F:PTB7-Th bulk heterojunction (BHJ) with an enhanced photogating effect. As result, phototransistors reach responsivity 1393.0 A W-1, specific detectivity 4.8 × 1012 jones, fast response 0.72 ms to light (900 nm). Meanwhile, integrated 16 array one-transistor-one-phototransistor (1T1PT) architecture is achieved. On basis effect, can not only achieve real-time, mapping but also implement image preprocessing, which promising advanced sensors.

Language: Английский

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Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping

Advanced Sensor Research, Journal Year: 2023, Volume and Issue: 2(8)

Published: March 3, 2023

Abstract It is vital to acquire real‐time pH signals with high resolution as variation can reflect important information regarding health status and physiological environment. Field‐effect transistor (FET)‐based biosensors (bio‐FETs), a kind of potentiometric sensor, are being rapidly developed for detection due their advantages sensitivity, low temperature dependence, portability. More importantly, the scalability bio‐FETs renders them applicable achieving spatial in sensing. In this review paper, design, operation principle, critical characteristics FET‐based sensor introduced. Then, recent progress mapping FET arrays, including static array where pixel directly addressed by wiring, active‐matrix accessed additional switching FETs, presented. Last, typical examples arrays biomedical applications, such monitoring DNA sequencing elongation

Language: Английский

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An Ion‐Mediated Spiking Chemical Neuron based on Mott Memristor

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(33)

Published: June 18, 2024

Artificial spiking neurons capable of interpreting ionic information into electrical spikes are critical to mimic biological signaling systems. Mott memristors attractive for constructing artificial due their simple structure, low energy consumption, and rich neural dynamics. However, challenges remain in achieving ion-mediated biohybrid-interfacing neurons. Here, a biomimetic chemical neuron (SCN) utilizing an NbO

Language: Английский

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Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Advanced Optical Materials, Journal Year: 2022, Volume and Issue: 10(24)

Published: Oct. 25, 2022

Abstract Printable oxide transistors have emerged as important optoelectronic synaptic devices to emulate the human visual cognitive system by integrating both photo‐sensing and perception functions. However, inferior electrical performance low pixel density of printed impede their implementation complex neuromorphic computing. Herein, a printable all‐oxide transistor array based on modified coffee‐ring structure indium tin (ITO) is reported. The extraordinary structural design endows ITO with high device uniformity, outstanding performance, superior process efficiency. Furthermore, 10 × 12 spatial resolution (142 dpi) exhibits durable detection memory behaviors. Meanwhile, an artificial neural network accuracy in recognition rate. These results promise efficiency exceptional printing strategy developing advanced for systems.

Language: Английский

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Modular conductive MOF-gated field-effect biosensor for sensitive discrimination on the small molecular scale

Chemical Engineering Journal, Journal Year: 2022, Volume and Issue: 456, P. 141079 - 141079

Published: Dec. 21, 2022

Language: Английский

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Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications

ACS Applied Materials & Interfaces, Journal Year: 2023, Volume and Issue: 15(19), P. 23583 - 23592

Published: April 6, 2023

Field-effect transistor (FET) biosensors based on two-dimensional (2D) materials have drawn significant attention due to their outstanding sensitivity. However, the Boltzmann distribution of electrons imposes a physical limit subthreshold swing (SS), and 2D-material biosensor with sub-60 mV/dec SS has not been realized, which hinders further increase sensitivity FET biosensors. Here, we report tunnel FETs (TFETs) SnSe2/WSe2 heterostructure observe tunneling effect 2D material in aqueous solution for first time an ultralow 29 mV/dec. A bilayer dielectric (Al2O3/HfO2) graphene contacts, significantly reduce leakage current contact resistance, respectively, are crucial realization solution. Then, propose novel biosensing method by using as sensing signal. The TFETs show extremely high pH 895/pH SS, surpassing single (WSe2) 8-fold. Specific detection glucose is superb (3158 A/A 5 mM), wide range (from 10-9 10-3 M), low (10-9 rapid response rate (11 s). sensors also exhibit ability monitoring complex biofluid (sweat). This work provides platform ultrasensitive biosensing. discovery may stimulate fundamental research potential applications.

Language: Английский

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Current and future technologies for monitoring cultured meat: A review

Food Research International, Journal Year: 2023, Volume and Issue: 173, P. 113464 - 113464

Published: Sept. 11, 2023

Language: Английский

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