Two-dimensional materials for future information technology: status and prospects

Science China Information Sciences, Journal Year: 2024, Volume and Issue: 67(6)

Published: May 29, 2024

Abstract Over the past 70 years, semiconductor industry has undergone transformative changes, largely driven by miniaturization of devices and integration innovative structures materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) graphene are pivotal in overcoming limitations silicon-based technologies, offering approaches transistor design functionality, enabling atomic-thin channel transistors monolithic 3D integration. We review important progress application 2D future information technology, focusing particular on microelectronics optoelectronics. comprehensively summarize key advancements across material production, characterization metrology, electronic devices, optoelectronic heterogeneous silicon. A strategic roadmap challenges for from basic research to industrial development outlined. To facilitate such a transition, technologies tools dedicated must be developed meet standards, employment AI growth, characterizations, circuit will essential. It is time academia actively engage with drive next 10 years research.

Language: Английский

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Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Chemical Reviews, Journal Year: 2024, Volume and Issue: 124(17), P. 9785 - 9865

Published: Aug. 12, 2024

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin–orbit couplings. Considerable attention from both scientific industrial communities fully fueled exploration of TMDs toward practical applications. Proposed scenarios, ultrascaled transistors, on-chip photonics, flexible optoelectronics, efficient electrocatalysis, critically depend scalable production large-area TMD films. Correspondingly, substantial efforts have been devoted refining synthesizing methodology 2D TMDs, which brought field a stage that necessitates comprehensive summary. In this Review, we give systematic overview basic designs advancements in epitaxial growth TMDs. We first sketch out fundamental structures diverse properties. Subsequent discussion encompasses state-of-the-art wafer-scale designs, single-crystal strategies, techniques for structure modification postprocessing. Additionally, highlight future directions application-driven material fabrication persistent challenges, aiming inspire ongoing along revolution modern semiconductor industry.

Language: Английский

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Precise p‐Type Substitutional Doping Enables WS₂ p‐n Anti‐Ambipolar Homojunction Phototransistor Arrays

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 16, 2025

Abstract Van der Waals (vdWs) p–n junctions assembled from 2D materials offer enhanced flexibility for creating versatile electronic and optoelectronic devices, attracting significant interest. However, the lack of reliable methods to produce high‐quality p‐type semiconductors, especially patterned channels, remains a major challenge progress in field. Here, precise substitutional doping strategy semiconductors is presented, enabling production millimeter‐scale WS 2 single‐crystal thin films with tailored n‐type properties. This advancement supports fabrication high‐performance ‐based field‐effect transistor (FET) miniaturized arrays near‐ohmic contact. Building on this progress, van homojunction p‐n array demonstrating distinct anti‐ambipolar behavior excellent rectification characteristics developed. In self‐powered photodetection mode, leveraging strong coupling vdWs interface, device achieves an exceptional photovoltaic effect high specific detectivity 3.4 × 10 Jones fast response time 400 µs. The development presents immense potential advancing next‐generation logic electronics opening new avenues large‐scale industrial applications.

Language: Английский

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Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Nano-Micro Letters, Journal Year: 2024, Volume and Issue: 16(1)

Published: Aug. 9, 2024

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring dimension and performance limits transistors based on TMDs has gained substantial importance. review provides a comprehensive investigation into these single 2D-TMD transistor. It delves impacts miniaturization, including reduction channel length, gate source/drain contact dielectric thickness transistor operation performance. In addition, this detailed analysis parameters such as resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, development p-type logic transistors. details two logical expressions transistor, current voltage. also emphasizes role TMD-based memory devices, focusing enhancing speed, endurance, data retention, extinction well reducing energy consumption functioning artificial synapses. demonstrates calculating methods dynamic synaptic devices. not only summarizes state art field but highlights potential future research directions applications. underscores anticipated challenges, opportunities, solutions navigating boundaries

Language: Английский

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An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors

Nature Electronics, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 8, 2025

Language: Английский

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A review of hafnium-based ferroelectrics for advanced computing

Solid-State Electronics, Journal Year: 2025, Volume and Issue: unknown, P. 109053 - 109053

Published: Jan. 1, 2025

Language: Английский

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Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe2 membranes

Microsystems & Nanoengineering, Journal Year: 2025, Volume and Issue: 11(1)

Published: Jan. 22, 2025

Abstract Nanoelectromechanical systems (NEMS) based on atomically-thin tungsten diselenide (WSe 2 ), benefiting from the excellent material properties and mechanical degree of freedom, offer an ideal platform for studying exploiting dynamic strain engineering cross-scale vibration coupling in two-dimensional (2D) crystals. However, such opportunity has remained largely unexplored WSe NEMS, impeding exploration exquisite physical processes realization novel device functions. Here, we demonstrate between atomic lattice nanomechanical resonances few-layer NEMS. Using a custom-built setup capable simultaneously detecting Raman motional signals, accomplish mode THz crystal phonon MHz structural vibration, achieving GHz frequency tuning modes with gauge factor 61.9, best among all 2D crystals reported to date. Our findings show that NEMS great promises exploring physics semiconductors.

Language: Английский

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The role of buffer layer in epitaxial growth of TMDCs

Nano Today, Journal Year: 2025, Volume and Issue: 62, P. 102718 - 102718

Published: March 20, 2025

Language: Английский

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Se-mediated dry transfer of wafer-scale 2D semiconductors for advanced electronics

Nature Communications, Journal Year: 2025, Volume and Issue: 16(1)

Published: May 14, 2025

Language: Английский

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Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Science China Information Sciences, Journal Year: 2024, Volume and Issue: 67(5)

Published: April 23, 2024

Language: Английский

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