Materialia, Journal Year: 2025, Volume and Issue: unknown, P. 102415 - 102415
Published: April 1, 2025
Language: Английский
ECS Sensors Plus, Journal Year: 2024, Volume and Issue: 3(1), P. 013401 - 013401
Published: Jan. 22, 2024
The
economic
growth
of
any
country
depends
upon
the
MSMEs
as
it
plays
a
vital
role
in
GDP
and
employment.
transportation
is
considered
lifeline
country.
Hence
due
to
developing
countries,
industries
vehicles
are
continuously
increasing
fulfil
industrial
or
domestic
requirements.
But
unfortunately,
emit
harmful
gases
exhaust
environment.
Which
directly
indirectly
impact
human
health.
Fresh
clean
air
prime
need
society.
monitoring
different
gas
concentrations
environment
very
essential
take
preventive
steps
control
pollution.
traditional
method
quality
expensive,
hence
most
countries
have
limited
stations.
In
field
nanotechnology,
scientists
developed
types
soft
metal
oxide
materials
that
capable
sensing
at
low
can
work
environmental
conditions.
For
last
10
years,
ferrite-based
sensors
primarily
used
detect
gases,
pollutants
from
vehicle
exhaust,
pollution
monitoring.
These
ferrites
excellent
electrical
magnetic
properties
also
be
tuned
according
requirement
sensor
increase
sensitivity
selectivity.
tuning
ferrite
synthesis
technique,
optimizing
preparation
conditions,
sintering
temperatures,
operating
dopant
concentration,
etc
This
paper
based
on
deep
study
techniques
nano-ferrites,
sensors,
mechanisms,
parameters,
application
chemo-resistive
sensors.
key
parameters
for
phase
formation,
crystallite
size,
grain
surface
area,
selectivity,
dopants,
sensitivity,
temperature,
response/recovery
time.
review
includes
researchers
find
high
like
hydrogen
(H
2
),
carbon
monoxide
(CO),
dioxide
(CO
oxygen
(O
ethylene
glycol
Language: Английский
Citations
42
Surface and Coatings Technology, Journal Year: 2025, Volume and Issue: 497, P. 131798 - 131798
Published: Jan. 13, 2025
Language: Английский
Citations
2
Materials, Journal Year: 2022, Volume and Issue: 15(20), P. 7339 - 7339
Published: Oct. 20, 2022
Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present comprehensive review on major advances achieved over the past thirty years in field of Ga2O3-based gas sensors. We begin with brief introduction polymorphs and basic electric properties Ga2O3. Next, provide an overview typical preparation methods fabrication Ga2O3-sensing developed so far. Then, will concentrate our discussion state-of-the-art sensor devices put emphasis seven sophisticated strategies improve their gas-sensing performance terms engineering optimization. Finally, give some concluding remarks forward suggestions, including (i) construction hybrid structures two-dimensional materials organic polymers, (ii) combination density functional theoretical calculations machine learning, (iii) development optical sensors using characteristic spectra future novel
Language: Английский
Citations
47
TrAC Trends in Analytical Chemistry, Journal Year: 2023, Volume and Issue: 166, P. 117199 - 117199
Published: July 20, 2023
Language: Английский
Citations
36
Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(12)
Published: March 25, 2025
The production and application of beta-phase gallium oxide (β-Ga2O3) single crystals—an emerging ultrawide bandgap semiconductor—is frequently coupled with high temperature mechanical load. Understanding the anisotropic properties at is crucial for optimizing high-performance β-Ga2O3, enhancing its stability reliability in high-temperature environments. Selective nanoindentation conducted on unintentional-doped (100)-grown β-Ga2O3 wafers both room (RT) a (HT) 600 °C, by aligning one facet Berkovich indenter parallel to either [001] or [010] low-index directions (100) surface. direction exhibits higher Young's modulus (E) lower hardness (H) compared RT. deformation morphology confirmed that deformed zones were localized under while more homogeneously distributed direction. Under HT, E H decreased different extents directions, where mechanisms noted. These findings can provide guidance ultra-precision machining HT applications monocrystalline β-Ga2O3.
Language: Английский
Citations
1
Sensors and Actuators A Physical, Journal Year: 2023, Volume and Issue: 365, P. 114860 - 114860
Published: Nov. 24, 2023
Language: Английский
Citations
18
ACS Omega, Journal Year: 2024, Volume and Issue: 9(20), P. 22084 - 22089
Published: April 24, 2024
2 in. bulk β-Ga2O3 single crystals are successfully grown by the edge-defined film-fed growth method with a homemade furnace system. By considering significance of wafer quality in future mass manufacture, nine-point characterization is developed to evaluate full-scale processed (100)-orientated single-crystal wafers. Crystalline and structural characteristics were evaluated using X-ray diffraction Raman spectroscopy, revealing decent crystalline mean full width at half-maximum value 60.8 arcsec homogeneous bonding structures. The statistical root-mean-square surface roughness, determined from nine scanning areas, was found be only 0.196 nm, indicating superior quality. Linear optical properties defect levels further investigated UV–visible spectrophotometry photoluminescence spectroscopy. high wafer-scale wafers meets requirements for homoepitaxial substrates electronic photonic devices vertical configurations.
Language: Английский
Citations
7
Journal of Materials Science Materials in Electronics, Journal Year: 2023, Volume and Issue: 34(12)
Published: April 1, 2023
Language: Английский
Citations
15
Micro and Nanostructures, Journal Year: 2023, Volume and Issue: 176, P. 207528 - 207528
Published: Feb. 8, 2023
Language: Английский
Citations
14
Materials, Journal Year: 2024, Volume and Issue: 17(5), P. 1147 - 1147
Published: March 1, 2024
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication high-quality wafers have enabled remarkable WBG semiconductor device applications. most common 4H-SiC, GaN, and β-Ga2O3 devices used are described. 4H-SiC GaN already achieved exceptional results alpha particles neutrons, thermal neutrons particular. While not yet reached same level technological maturity (compared to GaN), their current achievements X-ray indicate great potential promising prospects future
Language: Английский
Citations
5