Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films DOI
Nikita N. Yakovlev, А. V. Аlmaev, В. И. Николаев

et al.

Materials Today Communications, Journal Year: 2022, Volume and Issue: 34, P. 105241 - 105241

Published: Dec. 23, 2022

Language: Английский

Charge transition levels and stability of Ni- and Ir-doped β-Ga2O3: a comprehensive hybrid functional study DOI Creative Commons
Quốc Duy Hồ, Vo Khuong Dien, Nguyễn Thành Tiên

et al.

RSC Advances, Journal Year: 2025, Volume and Issue: 15(8), P. 5889 - 5894

Published: Jan. 1, 2025

In this study, the optimized hybrid functional HSE(0.26,0.0) is employed to investigate incorporation of nickel (Ni) and iridium (Ir) dopants in β-Ga 2 O 3 .

Language: Английский

Citations

2

Gallium and gallium compounds: New insights into the “Trojan horse” strategy in medical applications DOI Creative Commons
Wenyue Sun, Manlin Qi, Cheng Shi

et al.

Materials & Design, Journal Year: 2023, Volume and Issue: 227, P. 111704 - 111704

Published: Feb. 6, 2023

Infection, inflammation, tumors, and other illnesses have for a long time posed major danger to human health developed into global public issue. However, the existing treatment methods are sometimes not effective, leading high mortality. Therefore, it is urgent seek new alternative therapies. Gallium related derivatives received lot of interest recently because their exceptional biological safety distinctive pharmacological properties. More crucially, gallium its compounds potential specifically destroy iron metabolism, called "Trojan Horse" strategy, which provides unparalleled opportunities in antibacterial, anti-tumor, bone regeneration. In this review, compounds-based biomedical applications anti-inflammatory, regeneration focused upon relevant therapeutic mechanisms discussed. Then, latest gallium-based drug design delivery system summarized. Finally, we put forward limitations current materials development trend future materials. This review anticipated offer insights compounds, provide inspiration application future.

Language: Английский

Citations

37

A review on synthesis and applications of gallium oxide materials DOI

Jinshu Zhang,

Xiaoxu Kuang, Rong Tu

et al.

Advances in Colloid and Interface Science, Journal Year: 2024, Volume and Issue: 328, P. 103175 - 103175

Published: May 3, 2024

Language: Английский

Citations

17

"Enhancing Structural and Optical Properties of CuO Thin Films through Gallium Doping: A Pathway to Enhanced Photoluminescence and Predict for Solar Cells Applications" DOI Creative Commons

Sinovuyo Siyalo,

Habtamu Fekadu Etefa,

F.B. Dejene

et al.

Chemical Physics Impact, Journal Year: 2025, Volume and Issue: unknown, P. 100832 - 100832

Published: Jan. 1, 2025

Language: Английский

Citations

1

Effects of Cu, Ag, and Au Elements Doping on the Electronic and Optical Properties of β-Ga2O3 via First-Principles Calculations DOI

Jie Wang,

Xin Guo,

Aida Bao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 27, 2025

β-Ga2O3, as a semiconductor material with an ultrawide band gap (Eg > 4.8 eV), emerges promising candidate for ultraviolet (UV)-transparent semiconductors. Its distinctive property of high transparency from visible light to the region gives it broad application prospects in fields deep UV light-emitting diodes (LEDs), lasers, and electronic devices. This study employed first-principles calculations utilizing generalized gradient approximation+ U (GGA+U) method investigate impact doping β-Ga2O3 transition metals including copper (Cu), silver (Ag), gold (Au) on its structure optical properties. The findings reveal that under oxygen (O)-rich conditions, formation energy doped system is lower compared gallium (Ga)-rich conditions. And Cu-doped demonstrated possess lowest energy, indicating enhanced stability β-Ga2O3. Additionally, intrinsic calculated be 4.853 eV, whereas gaps metal (TM)-doped are significantly reduced. Specifically, Cu-doped, Ag-doped, Au-doped 1.228, 0.982, 1.648 respectively. reduction can attributed introduction impurity levels by metals, which modify electron distribution atoms vicinity Fermi level. Remarkably, exhibits superior absorption performance, incorporation such Cu, Ag, Au facilitates expansion range. transformation not only enhances material's light-harvesting capability but also improves providing crucial theoretical foundation development novel β-Ga2O3-based optoelectronic

Language: Английский

Citations

1

Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics DOI Creative Commons
Ao Jiang,

Shibo Xing,

Haowei Lin

et al.

Photonics, Journal Year: 2024, Volume and Issue: 11(4), P. 370 - 370

Published: April 15, 2024

Numerous optoelectronic devices based on low-dimensional nanostructures have been developed in recent years. Among these, pyramidal semiconductors (zero- and one-dimensional nanomaterials) favored the field of optoelectronics. In this review, we discuss detail structures, preparation methods, band electronic properties, applications (photocatalysis, photoelectric detection, solar cells, light-emitting diodes, lasers, optical quantum information processing) demonstrate their excellent performances. More specifically, semiconductor dots (PSQDs) possess higher mobilities longer lifetimes, which would be more suitable for photovoltaic requiring fast carrier transport. addition, linear polarization direction exciton emission is easily controlled via magnetic PSQDs with C3v symmetry, so that all-optical multi-qubit gates electron spin as a bit could realized. Therefore, use (e.g., InAs, GaN, InGaAs, InGaN) effective candidates constructing examined due to growing interest processing. Pyramidal nanorods (PSNRs) nanowires (PSNWRs) also exhibit efficient separation electron-hole pairs strong light absorption effects, are expected widely utilized light-receiving devices. Finally, review concludes summary current problems suggestions potential future research directions context semiconductors.

Language: Английский

Citations

7

Wide-Bandgap Semiconductors for Radiation Detection: A Review DOI Open Access
Ivana Capan

Materials, Journal Year: 2024, Volume and Issue: 17(5), P. 1147 - 1147

Published: March 1, 2024

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication high-quality wafers have enabled remarkable WBG semiconductor device applications. most common 4H-SiC, GaN, and β-Ga2O3 devices used are described. 4H-SiC GaN already achieved exceptional results alpha particles neutrons, thermal neutrons particular. While not yet reached same level technological maturity (compared to GaN), their current achievements X-ray indicate great potential promising prospects future

Language: Английский

Citations

5

Liquid metals nanotransformer for healthcare biosensors DOI Open Access

Yunlong Bai,

Jie Zhang, Chennan Lu

et al.

Soft Science, Journal Year: 2023, Volume and Issue: 3(4)

Published: Nov. 3, 2023

Featuring low cost, melting points, excellent biocompatibility, outstanding electrical conductivity, and mechanical properties, gallium-based liquid metals (LMs) have become a promising class of materials to fabricate flexible healthcare sensors. However, the extremely high surface tension hinders their manipulation cooperation with substrates. To address this problem, inspiration nanomaterials has been adopted mold LMs into LM nanoparticles (LMNPs) expanded advantages. The transformability LMNPs endows them functionalities for sensors in multiple dimensions, such as intelligent response specific molecules or strains, various morphologies, integration high-resolution circuits, conductive elastomers. This review aims summarize superior properties LMs, LMNPs, correlated advantages sensor performance. Multidimensional functional sensing forms consisting corresponding applications will be presented. In end, existing challenges prospects processing application also discussed.

Language: Английский

Citations

13

Gas sensitivity of PECVD β-Ga2O3 films with large active surface DOI
А. V. Аlmaev, Nikita N. Yakovlev,

Е. В. Черников

et al.

Materials Chemistry and Physics, Journal Year: 2024, Volume and Issue: 320, P. 129430 - 129430

Published: May 7, 2024

Language: Английский

Citations

4

High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure DOI Creative Commons
А. V. Аlmaev, Nikita N. Yakovlev, V. V. Kopyev

et al.

Chemosensors, Journal Year: 2023, Volume and Issue: 11(6), P. 325 - 325

Published: June 1, 2023

The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. κ(ε)-Ga2O3:Sn SnO2 films grown by halide vapor phase epitaxy high-frequency magnetron sputtering, respectively. gas sensor response speed operation structures under H2 exposure exceeded corresponding values single within temperature range 25–175 °C. Meanwhile, demonstrated a low to CO, NH3, CH4 gases high NO2, even at concentrations 100 ppm. current responses structure 104 ppm NO2 30–47 arb. un. 3.7 un., correspondingly, 125 increase sensitivity temperatures is explained rise electron concentration change microrelief film surface when depositing on κ(ε)-Ga2O3:Sn. heterostructures, having over wide operating range, can find application various fields.

Language: Английский

Citations

10