Luminescent properties and LED Application of Broadband Near-Infrared Emitting NaInGe2O6: Cr3+ phosphors DOI
Weiying Zhou, Jiabao Luo, Jiaqi Fan

et al.

Ceramics International, Journal Year: 2021, Volume and Issue: 47(18), P. 25343 - 25349

Published: June 5, 2021

Language: Английский

Advances in Chromium‐Activated Phosphors for Near‐Infrared Light Sources DOI

Fangyi Zhao,

Zhen Song, Quanlin Liu

et al.

Laser & Photonics Review, Journal Year: 2022, Volume and Issue: 16(11)

Published: Aug. 7, 2022

Abstract Cr 3+ /Cr 4+ ‐activated near‐infrared (NIR) luminescent materials have attracted extensive attention owing to their tunable emission wavelength and widespread applications in plant growth, food analysis, biomedical imaging, night vision, so on. Plenty of excellent NIR are developed by introducing ion various inorganic hosts. Herein, the effect crystal field on luminescence combining Tanabe–Sugano energy level diagram configuration coordinate model is discussed. Research progress ‐doped materials, including phosphors designed from structural models with octahedral, tetrahedral, other coordination types, then outlined. The properties more than 200 kinds summarized. In particular, several strategies for tuning wavelength, broadening band, enhancing efficiency, improving thermal stability, listed. Finally, current challenges future prospects research presented. This review will contribute a deeper understanding not only mechanism but also chromium‐doped as develop better performance explore applications.

Language: Английский

Citations

293

Trivalent Chromium Ions Doped Fluorides with Both Broad Emission Bandwidth and Excellent Luminescence Thermal Stability DOI

Qiuming Lin,

Qiang Wang, Min Liao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2021, Volume and Issue: 13(15), P. 18274 - 18282

Published: April 8, 2021

Recently, trivalent chromium ion doped phosphors have exhibited significant application potential in broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs). However, developing an NIR phosphor with both broad emission bandwidth and excellent luminescence thermal stability is still a great challenge. Here, we demonstrate phosphor, ScF3:Cr3+, which can fulfill conditions simultaneously. The prepared show the range of 700 to 1100 nm, full width at half-maximum (FWHM) 140 nm peaking 853 nm. These also (the intensity ScF3:Cr3+ keeps 85.5% 150 °C compared value room temperature). An pc-LED based on blue LED chips was fabricated tested. results that yield strong emission. This work not only provides promising for pc-LEDs but has important guiding significance effect synthesis properties Cr3+-doped fluorides.

Language: Английский

Citations

206

A General Ammonium Salt Assisted Synthesis Strategy for Cr3+‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions DOI

Fanquan He,

Enhai Song, Yayun Zhou

et al.

Advanced Functional Materials, Journal Year: 2021, Volume and Issue: 31(36)

Published: June 24, 2021

Abstract The discovery of highly efficient broadband near infrared (NIR) emission material is urgent and crucial for constructing NIR lighting sources emerging applications. Herein, a series hexafluorides A 2 BMF 6 :Cr 3+ (A = Na, K, Rb, Cs; B Li, M Al, Ga, Sc, In) peaking at ≈733–801 nm with full width half maximum (FWHM) ≈98–115 are synthesized by general ammonium salt assisted synthesis strategy. Benefiting from the pre‐ammoniation trivalent metal sources, Cr can be more efficiently doped into simultaneously prevent generation competitive phase. Particularly, Na 3 ScF (λ em 774 nm, FWHM ≈ 108 nm) optimal ‐doping concentration 35.96% shows high internal quantum efficiency 91.5% an external ≈40.82%. emitting diode (LED) device output power ≈291.05 mW 100 mA driven current photoelectric conversion 20.94% fabricated. strategy opens up new avenues exploration ‐doped phosphors, as‐obtained record demonstrates LED

Language: Английский

Citations

162

Structural Rigidity Control toward Cr3+-Based Broadband Near-Infrared Luminescence with Enhanced Thermal Stability DOI

Gaochao Liu,

Maxim S. Мolokeev, Zhiguo Xia

et al.

Chemistry of Materials, Journal Year: 2022, Volume and Issue: 34(3), P. 1376 - 1384

Published: Jan. 19, 2022

Broadband near-infrared (NIR) light sources based on phosphor-converted light-emitting diodes (pc-LEDs) are desirable for biochemical analysis and medical diagnosis applications; however, the development of target NIR phosphor is still a challenge. Herein, broadband phosphors, Cr3+-activated CaSc1–xAl1+xSiO6 (λem = 950 nm), designed optimized by chemical substitution toward enhanced quantum efficiency thermal stability. Structural spectral analyses along with density functional theory calculations reveal that Sc3+/Al3+ contributes to enhancing structural rigidity local symmetry [Sc/AlO6] octahedron so nonradiative relaxation Cr3+ emission centers suppressed significantly. The as-fabricated phosphor-in-glass-based LED source demonstrates great potential in detection alcohol concentration. This study provides structure design principle exploring phosphors stability will also stimulate further studies material discovery quantitative spectroscopy.

Language: Английский

Citations

155

Ultra-Broadband and high efficiency Near-Infrared Gd3Zn Ga5-2Ge O12:Cr3+ (x = 0–2.0) garnet phosphors via crystal field engineering DOI
Ye Wang, Zhijun Wang,

Guohui Wei

et al.

Chemical Engineering Journal, Journal Year: 2022, Volume and Issue: 437, P. 135346 - 135346

Published: Feb. 19, 2022

Language: Английский

Citations

152

Recent Advances in Chromium‐Doped Near‐Infrared Luminescent Materials: Fundamentals, Optimization Strategies, and Applications DOI
Peipei Dang, Yi Wei, Dongjie� Liu

et al.

Advanced Optical Materials, Journal Year: 2022, Volume and Issue: 11(3)

Published: Dec. 5, 2022

Abstract Development of chromium‐doped luminescent materials is pertinent to many emerging applications, ranging from agriculture, food industry noninvasive health monitoring. The fundamental importance chromium‐activated in the field optics and biomedicine makes rapid development novel relevant applications. Herein, recent advances on luminescence principle photoluminescence (PL) optimization for Cr 3+ ‐activated together with their potential applications are reviewed. different types most recently developed ‐doped design principles systematically summarized. associations between crystal structure near‐infrared (NIR) PL properties, as well performance‐evaluating parameters introduced examples known NIR emitting phosphors, which will be helpful explore future materials. Based control, site engineering, electron–phonon coupling, several efficient strategies optimizing performances including bandwidth, thermal stability, quantum efficiency proposed. Then, fields analysis, night vision, information encryption, optical sensors surveyed. Finally, challenges promising

Language: Английский

Citations

149

Hidden Structural Evolution and Bond Valence Control in Near-Infrared Phosphors for Light-Emitting Diodes DOI
Mu‐Huai Fang, Kuan‐Chun Chen, Natalia Majewska

et al.

ACS Energy Letters, Journal Year: 2020, Volume and Issue: 6(1), P. 109 - 114

Published: Dec. 9, 2020

We aim to conduct a complete study on the unexpected structure evolution behavior in Cr3+-doped phosphors. A series of Ga2–xScxO3:Cr3+ phosphors are successfully synthesized and confirmed through structural studies, while lattice parameters change unexpectedly. The unique partial substitution (∼87%) Sc3+ octahedral site is demonstrated via Rietveld refinement. Therefore, bond valence sum calculation explains reason for this particular concentration. photoluminescent bandwidth electron–lattice coupling energy initially increase then decrease, implying an inhomogeneous broadening effect. Time-resolved spectra electron paramagnetic resonance utilized further examine subtle microstructures second coordination sphere effect Cr3+. Ga1.594Sc0.4O3:0.006Cr3+ exhibits high internal quantum efficiency (99%) phosphor-converted light-emitting diode output power (66.09 mW), demonstrating its capability as outstanding infrared phosphor. This work will motivate research during solid solution process.

Language: Английский

Citations

145

Efficient Broadband Near‐Infrared Emission in the GaTaO4:Cr3+ Phosphor DOI
Jiyou Zhong, Ya Zhuo, Fu Du

et al.

Advanced Optical Materials, Journal Year: 2021, Volume and Issue: 10(2)

Published: Nov. 1, 2021

Abstract Efficient broadband near‐infrared (NIR) emitting materials with an emission peak centered above 830 nm are crucial for smart NIR spectroscopy‐based technologies. However, the development of these remains a significant challenge. Herein, series design rules rooted in computational methods and empirical crystal‐chemical analysis is applied to identify new Cr 3+ ‐substituted phosphor. The compound GaTaO 4 :Cr emerged from this study based on material's high structural rigidity, suitable electronic environment, relatively weak electron–phonon coupling. Irradiating phosphor 460 blue light generates (λ em,max = 840 nm) covering 700–1100 region electromagnetic spectrum full width at half maximum 140 nm. phase has internal quantum yield 91% excellent thermal stability, maintaining 85% room temperature intensity 100 °C. Fabricating phosphor‐converted light‐emitting diode device shows that intense (178 mW 500 mA) photoelectric efficiency 6%. This work not only provides material potential next‐generation high‐power applications but also highlights set capable developing highly efficient long‐wavelength materials.

Language: Английский

Citations

142

Efficient and Thermally Stable Broad-Band Near-Infrared Emission in a KAlP2O7:Cr3+ Phosphor for Nondestructive Examination DOI

Hongshi Zhang,

Jiyou Zhong, Fu Du

et al.

ACS Applied Materials & Interfaces, Journal Year: 2022, Volume and Issue: 14(9), P. 11663 - 11671

Published: Feb. 23, 2022

Broad-band near-infrared (NIR) phosphors are essential to assembling portable NIR light sources for applications in spectroscopy technology. However, developing inexpensive, efficient, and thermally stable broad-band remains a significant challenge. In this work, phosphate, KAlP2O7, with wide band gap suitable electronic environment Cr3+ equivalent substitution was selected as the host material. The synthesized KAlP2O7:Cr3+ material exhibits emission covering 650-1100 nm peak centered at 790 full width half-maximum (fwhm) of 120 under 450 excitation. internal quantum efficiency (IQE) determined be 78.9%, intensity 423 K still maintains 77% that room temperature, implying high excellent thermal stability Finally, phosphor-converted light-emitting diode (pc-LED) device fabricated by using as-prepared combined blue LED chip, which presents output power 32.1 mW photoelectric conversion 11.4% drive current 100 mA. Thus, work not only provides an inexpensive performance pc-LEDs but also highlights some strategies explore class materials.

Language: Английский

Citations

142

Efficient and Tunable Luminescence in Ga2–xInxO3:Cr3+ for Near-Infrared Imaging DOI
Jiyou Zhong, Ya Zhuo, Fu Du

et al.

ACS Applied Materials & Interfaces, Journal Year: 2021, Volume and Issue: 13(27), P. 31835 - 31842

Published: June 29, 2021

Broadband near-infrared (NIR) emitting materials are in great demand as next-generation smart NIR light sources. In this work, a Cr3+-substituted phosphor capable of efficiently converting visible to is developed through the solid solution, Ga2–xInxO3:Cr3+ (0 ≤ x 0.5). The compounds were prepared using high-temperature solid-state synthesis, and crystal electronic structure, morphology, site preference, photoluminescence properties studied. results demonstrate high quantum yield (88%) impressive absorption efficiency (50%) when = 0.4. emission tunable across wide range (713–820 nm) depending on value x. Moreover, fabricating prototype phosphor-converted light-emitting diode (LED) device 450 nm LED [(Ga1.57Cr0.03)In0.4]O3 showed an output power that reached 40.4 mW with photoelectric conversion 25% driven by current 60 mA, while resulting was able identify damaged produce undetectable light. These outstanding potential for imaging applications.

Language: Английский

Citations

137