Free Carrier Auger–Meitner Recombination in Monolayer Transition Metal Dichalcogenides DOI
J. Hader, Jerome V. Moloney

Nano Letters, Journal Year: 2024, Volume and Issue: 25(1), P. 284 - 290

Published: Dec. 27, 2024

Microscopic many-body models based on inputs from first-principles density functional theory are used to calculate the carrier losses due free Auger–Meitner recombination (AMR) processes in Mo- and W-based monolayer transition metal dichalcogenides as a function of density, temperature, dielectric environment. Despite exceptional strength Coulomb interaction two-dimensional materials, AMR found be similar magnitude those conventional III–V-based quantum wells for same wavelengths. Unlike case III–V show nontrivial dependencies fact that bandgap renormalizations order hundreds millielectronvolts can bring higher bands into or out resonance with optimal energy level transition, approximately one lowest band. Similar behaviors temperature screening.

Language: Английский

Two-Dimensional Electron–Hole Plasma in Colloidal Quantum Shells Enables Integrated Lasing Continuously Tunable in the Red Spectrum DOI
Ivo Tanghe,

Korneel Molkens,

Tom Vandekerckhove

et al.

ACS Nano, Journal Year: 2024, Volume and Issue: 18(22), P. 14661 - 14671

Published: May 23, 2024

Combining integrated optical platforms with solution-processable materials offers a clear path toward miniaturized and robust light sources, including lasers. A limiting aspect for red-emitting remains the drop in efficiency at high excitation density due to non-radiative quenching pathways, such as Auger recombination. Next this, lasers based on remain ill characterized, leaving questions about their ultimate performance. Here, we show that colloidal quantum shells (QSs) offer viable solution processable material platform circumvent these issues. We first gain QSs is mediated by 2D plasma state of unbound electron–hole pairs, opposed bound excitons, which gives rise broad-band sizable across full red spectrum record lifetimes low threshold. Moreover, density, emission does not quench, feat can attribute an increased radiative recombination rate. Finally, are silicon nitride platform, enabling spectral contrast, surface emitting, TE-polarized ultranarrow beam divergence entire from small area. Our results indicate QS excellent realize highly performant compact on-chip sources.

Language: Английский

Citations

5
Control of Hybrid Exciton Lifetime in MoSe2/WS2 Moiré Heterostructures DOI Creative Commons
Haowen Xu,

Jiangcai Wang,

Huan Liu

et al.

Advanced Science, Journal Year: 2024, Volume and Issue: unknown

Published: July 5, 2024

Abstract Hybrid excitons, characterized by their strong oscillation strength and long lifetimes, hold great potential as information carriers in semiconductors. They offer promising applications exciton‐based devices circuits. MoSe 2 /WS heterostructures represent an ideal platform for studying hybrid but how to regulate the exciton lifetime has not yet been explored. In this study, layer hybridization is modulated applying electric fields parallel or antiparallel dipole moment, enabling us from 1.36 4.60 ns. Furthermore, time‐resolved photoluminescence decay traces are measured at different excitation power. A annihilation rate of 8.9 × 10 −4 cm s −1 obtained fitting. This work reveals effects power on excitons 1.5° moiré heterostructures, which play important roles high quantum yield optoelectronic based transition‐metal dichalcogenides heterostructures.

Language: Английский

Citations

4
Ultrafast Optical Control of Rashba Interactions in a TMDC Heterostructure DOI

Henry Mittenzwey,

Abhijeet Kumar, Raghav Dhingra

et al.

Physical Review Letters, Journal Year: 2025, Volume and Issue: 134(2)

Published: Jan. 14, 2025

We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such system, interactions arise from an out-of-plane electric field due to photogenerated inducing phonon-assisted intravalley relaxation. develop theoretical description based on microscopic approach quantify magnitude and test these predictions via time-resolved Kerr rotation measurements. agreement with calculations, we find that Rashba-induced mixing becomes dominating channel above T=70 K. Our work identifies previously unexplored spin-depolarization heterostructures which can be used for ultrafast manipulation. locked icon Physics Subject Headings (PhySH)ExcitonsKerr effectPhononsRashba couplingSpin relaxationSpin-orbit couplingValleytronicsTransition metal dichalcogenides

Language: Английский

Citations

0
Emergence of a condensate with finite-energy Cooper pairing in hybrid exciton/superconductor systems DOI
Viktoriia Kornich

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 110(6)

Published: Aug. 14, 2024

We study theoretically a setup consisting of excitons formed in two valleys, with proximity-induced Cooper pairing, different the conduction and valence bands. Due to combination Coulomb interaction superconducting proximity effects, pairing between electrons from bands valleys is formed. This finite-energy intervalley has both even- odd-frequency contributions. show that there phase transition into formation robust macroscopic condensate such pairs present characteristics corresponding Higgs modes.

Language: Английский

Citations

0
Room-temperature Efficient and Tunable Interlayer Exciton Emissions in WS2/WSe2 Heterobilayers at High Generation Rates DOI
Qiang Fu, Xiaoya Liu,

Shixuan Wang

et al.

Optics Letters, Journal Year: 2024, Volume and Issue: 49(18), P. 5196 - 5196

Published: Aug. 22, 2024

Transition metal dichalcogenide (TMDC) heterobilayers (HBs) have been intensively investigated lately because they offer novel platforms for the exploration of interlayer excitons (IXs). However, potentials IXs in TMDC HBs not fully studied as efficient and tunable emitters both photoluminescence (PL) electroluminescence (EL) at room temperature (RT). Also, efficiencies PL EL carefully quantified. In this work, we demonstrate that IX WS 2 /WSe could serve promising high generation rates due to its immunity efficiency roll-off. Furthermore, by applying gate voltages balance electron hole concentrations reinforce built-in electric fields, quantum yield (QY) external (EQE) ∼0.48% ∼0.11% were achieved RT, respectively, with exceeding 10 21 cm – ·s 1 , which confirms capabilities NIR light surpassing most intralayer emissions from TMDCs.

Language: Английский

Citations

0
Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field DOI
Mohammad Ali Mohebpour, Nicola Seriani, Meysam Bagheri Tagani

et al.

Materials Today Communications, Journal Year: 2024, Volume and Issue: unknown, P. 111059 - 111059

Published: Nov. 1, 2024

Language: Английский

Citations

0
Free Carrier Auger–Meitner Recombination in Monolayer Transition Metal Dichalcogenides DOI
J. Hader, Jerome V. Moloney

Nano Letters, Journal Year: 2024, Volume and Issue: 25(1), P. 284 - 290

Published: Dec. 27, 2024

Microscopic many-body models based on inputs from first-principles density functional theory are used to calculate the carrier losses due free Auger–Meitner recombination (AMR) processes in Mo- and W-based monolayer transition metal dichalcogenides as a function of density, temperature, dielectric environment. Despite exceptional strength Coulomb interaction two-dimensional materials, AMR found be similar magnitude those conventional III–V-based quantum wells for same wavelengths. Unlike case III–V show nontrivial dependencies fact that bandgap renormalizations order hundreds millielectronvolts can bring higher bands into or out resonance with optimal energy level transition, approximately one lowest band. Similar behaviors temperature screening.

Language: Английский

Citations

0