Atypical Sliding and Moiré Ferroelectricity in Pure Multilayer Graphene

Physical Review Letters, Journal Year: 2023, Volume and Issue: 131(9)

Published: Aug. 29, 2023

Most nonferroelectric two-dimensional materials can be endowed with so-called sliding ferroelectricity via nonequivalent homobilayer stacking, which is not applicable to monoelement systems like pure graphene bilayer inversion symmetry at any vector. Herein, we show first-principles evidence that multilayer N>3 all ferroelectric, where the polarizations of polar states stem from breaking in stacking configurations across layer instead adjacent layer, are electrically switchable interlayer sliding. The nonpolar also driven sliding, and more diverse distinct will emerge layers. In contrast ferroelectric moiré domains opposite polarization directions twisted bilayers reported previously, pattern some (e.g., monolayer-trilayer graphene) possess nonzero net same direction separated by regions, reversed upon bands two should facilitate electrical detection such during switching.Received 10 April 2023Accepted 21 July 2023DOI:https://doi.org/10.1103/PhysRevLett.131.096801© 2023 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasFerroelectricityFirst-principles calculationsTwistronicsPhysical SystemsGrapheneCondensed Matter, Materials & Applied Physics

Language: Английский

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Van der Waals Ferroelectrics: Theories, Materials, and Device Applications

Advanced Materials, Journal Year: 2023, Volume and Issue: 36(22)

Published: June 26, 2023

In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW exhibit great promise in memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic so on. Here, the very advances field ferroelectrics (FEs) reviewed. First, theories ferroelectricity briefly discussed. Then, a comprehensive summary non-stacking is provided based on crystal structures emerging sliding ferroelectrics. addition, potential applications various branches/frontier fields enumerated, focus artificial intelligence. Finally, challenges development prospects

Language: Английский

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Atomic-level polarization reversal in sliding ferroelectric semiconductors

Nature Communications, Journal Year: 2024, Volume and Issue: 15(1)

Published: May 7, 2024

Abstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address decisive challenge to in-situ trace induced polarization reversal vdW-layered yttrium-doped γ-InSe, step by atom atom. We directly observe real-time a 1/3-unit cell along armchair direction, corresponding vertical reversal. The driven only low energetic electron-beam illumination suggests rather switching barriers. Additionally, propose new mechanism supports observed pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into via atomic-scale provide momentous initial progress for ongoing future research on ferroelectrics non-volatile storages or ferroelectric field-effect transistors.

Language: Английский

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The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

ACS Nano, Journal Year: 2024, Volume and Issue: 18(3), P. 1778 - 1819

Published: Jan. 5, 2024

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by external field, stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile electrically switchable feature have exhibited enormous potential controlling electronic optoelectronic leading to extremely fertile area research. Here, we review relevant integrated ferroelectricity. This starts introduce background about concerned themes, namely ferroelectrics, then presents fundamental mechanisms, tuning strategies, as well progress ferroelectric effect optical materials. Subsequently, latest developments material-based ferroelectricity are summarized. Finally, future outlook challenges this exciting field suggested.

Language: Английский

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Deciphering the ultra-high plasticity in metal monochalcogenides

Nature Materials, Journal Year: 2024, Volume and Issue: 23(2), P. 196 - 204

Published: Jan. 8, 2024

Language: Английский

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Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(21)

Published: Feb. 1, 2024

Abstract The rapid development in information technologies necessitates advancements of their supporting hardware. In particular, new computing paradigms are needed to overcome the bottleneck traditional von Neumann architecture. Bottom‐up innovation, especially at materials and devices level, has potential disrupt existing through emergent phenomena. As a type conceptual device, 2D ferroelectric field‐effect transistor (FeFET) is highly sought after due its integration with modern semiconductor processes. Its low power consumption, area efficiency, ultra‐fast operation provide an extra edge over technologies. This review highlights recent developments FeFET, covering device construction, working mechanisms, polarization mechanism, multi‐functional applications prospects. combination dielectric for multi‐functionality discussed. includes non‐volatile memories (NVM), neural network computing, logic operation, photodetectors. novel platform, interfaces bestowed plethora physical mechanisms applications.

Language: Английский

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Two-Dimensional Materials for Brain-Inspired Computing Hardware

Chemical Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.

Language: Английский

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Across‐Layer Sliding Ferroelectricity in 2D Heterolayers

Advanced Functional Materials, Journal Year: 2023, Volume and Issue: 33(29)

Published: April 6, 2023

Although most two-dimensional (2D) materials are non-ferroelectric with highly symmetric lattices, symmetry breaking may take place in their bilayers upon certain stacking order, giving rise to so-called sliding ferroelectricity where the vertical polarizations can be electrically reversed via interlayer translation. However, it is not supposed appear systems like graphene bilayer centro-symmetry at any configuration, and origin of recently reported intercalated between h-BN (Nature 2020, 588, 71) still unclear. Here we propose a model across-layer that arises from asymmetry next neighbor couplings. The centro-symmetric 2D switched multilayer sliding, observed ferroelectric hysteresis clarified. Moreover, such exist series other heterolayers quasi-degenerate polar states, or trilayer on BN substrate, even molecule layer surface each store 1 bit data independently, resolving bottleneck issue for high-density storage.

Language: Английский

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Stacking Order Engineering of Two-Dimensional Materials and Device Applications

Chemical Reviews, Journal Year: 2023, Volume and Issue: 124(4), P. 1862 - 1898

Published: Dec. 27, 2023

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering stacking order, many new ferroic, strongly correlated topological orderings emerge with exotic electrical, optical magnetic properties. Thanks to weak vdW interlayer bonding, such highly flexible energy-efficient order engineering has transformed design of quantum properties materials, unleashing potential for miniaturized high-performance device applications electronics, spintronics, photonics, surface chemistry. This Review provides a comprehensive overview their applications, ranging from typical fabrication characterization methods novel physical emergent slidetronics twistronics prototyping. The main emphasis is on critical role affecting charge transfer, orbital coupling flat band formation innovative on-demand potentials. demonstrating correlation configurations functionality, we highlight implications next-generation electronic, photonic chemical energy conversion devices. We conclude our perspective this exciting field including challenges opportunities future research.

Language: Английский

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2D Ferroic Materials for Nonvolatile Memory Applications

Advanced Materials, Journal Year: 2023, Volume and Issue: unknown

Published: July 24, 2023

Abstract The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high‐speed, low‐power, and high‐density in the field of integrated circuits. Long‐range orders observed 2D have triggered extensive research interest magnets, ferroelectrics, multiferroics, their device applications. Devices heterostructures with an atomically smooth interface ultrathin thickness exhibited impressive properties significant potential developing advanced memory. In this context, a systematic review emergent is conducted here, emphasizing recent applications, view to proposing brighter prospects magnetic materials, ferroelectric multiferroic relevant devices.

Language: Английский

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