Metasurface-enabled broadband multidimensional photodetectors

Nature Communications, Journal Year: 2024, Volume and Issue: 15(1)

Published: Sept. 27, 2024

Language: Английский

---

Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision

Light Science & Applications, Journal Year: 2025, Volume and Issue: 14(1)

Published: Feb. 3, 2025

Abstract Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on combination polarizing optical elements standard photodetectors, which requires substantial amount space manufacturing expenses. Although on-chip polarized photodetectors have been realized in recent years based two-dimensional (2D) materials with low-symmetry crystal structures, they are limited by the intrinsic anisotropic property thus optional range materials, operation wavelength, more importantly, low ratio, hindering their practical applications. In this work, we construct platform that transcends constraints material anisotropy, integrating WSe 2 -based photodetector MoS field-effect transistor, delivering high-performance broadband polarization detection capability orders magnitude improvement ratio on/off ratio. The arises from hot electron injection caused plasmonic metal electrode amplified transistor to raise impressive value over 60 infrared (IR) band, reaching level existing Meanwhile, system achieves significant photosensitivity, 10 3 IR band. Based above performance optimization, demonstrated its polarization-modulated communication ability artificial vision applications high image recognition accuracy ~99%. proposed provides promising route for development long-sought minimized, high-performance, multifunctional optoelectronic systems.

Language: Английский

---

Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 5, 2024

Abstract Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet growing demands diverse applications spanning spectrum from ultraviolet (UV) terahertz (THz). 2D materials very attractive photodetector because their distinct optical electrical properties. The atomic‐thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, absorption coefficient significantly benefit chip‐scale production integration materials‐based photodetectors. extremely sensitive detection at ambient temperature with ultra‐fast capabilities is made possible adaptability materials. Here, recent progress photodetectors based on materials, covering UV THz reported. In this report, light first deliberated in terms physics. Then, various mechanisms which detectors work, important performance parameters, fruitful fabrication methods, fundamental properties types detectors, different strategies improve performance, discussed.

Language: Английский

---

High‐Speed Short Infrared Detector Based on Vertical Gr/Se_0.2Te_0.8/GaAs Heterojunction

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: July 22, 2024

Abstract In the domain of high‐performance short‐wave infrared (SWIR) photodetection and imaging, existing technologies predominantly utilize single‐crystal germanium III‐V semiconductors. Despite their efficacy, these materials are encumbered by laborious synthesis complex fabrication demands. this study, large‐area, high‐crystallinity Se 0.2 Te 0.8 thin films through a CMOS‐compatible vacuum thermal evaporation process is reported. A high‐speed, broad‐spectrum photodetector engineered with an innovative Gr/Se /GaAs vertical heterostructure presented, which capitalizes on augmented carrier mobility employs graphene innovatively as both collection interface electrode. This configuration facilitates remarkably swift response time 800 ns/1 µs at crucial 1310 nm wavelength for optical communications. Moreover, 5 × array device demonstrates substantial SWIR imaging capabilities ambient conditions, marking paradigm shift in uncooled communication technologies. work not only extends boundaries performance but also underscores potential novel material systems high‐speed applications.

Language: Английский

---

Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb₂S₃ heterojunction

Applied Physics Express, Journal Year: 2025, Volume and Issue: 18(1), P. 015003 - 015003

Published: Jan. 1, 2025

Abstract Graphene photodetectors face challenges like weak absorption and narrow spectral range. To overcome these weakness, we proposed a novel photodetector based on Gold (Au)/Graphene/Chalcogenide (Sb 2 S 3 ) hetero-junction, leveraging surface plasmonic phase-transition effects. Simulations show that optimizing Au Sb nanoantenna thicknesses diameters can achieve an efficiency of 0.9 for both amorphous crystalline states, with adjustable wavelength range 200 nm. The device demonstrates superior performance, including responsivity 125 A W −1 , quantum 1.36 × 10 4 %, detectivity 2.25 9 Jones, offering pathway to next-generation optoelectronic chips.

Language: Английский

---

Recent Progress on Local Field Manipulations of Graphene Photodetectors

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 30, 2025

Abstract Graphene, with exceptional carrier mobility and broad‐spectrum light absorption, provides a new platform for photodetection applications, thereby driving the development of next‐generation photodetectors. However, graphene photodetectors suffer from challenges such as low responsivity high noise. Due to its strong interaction density states, optoelectronic properties can be easily manipulated by local fields. Manipulation fields in is promising strategy improve detection performance expand functionality. In this review, manipulations optical are introduced, which include combination photonic structures fabrication nanostructures. Then, electric field, specifically through control electrostatic field built‐in discussed. Moreover, functional devices categorized into polarization‐sensitive photodetectors, spectral detectors, bionic devices, logic devices. Last, future perspectives summarized drive further research advanced applications.

Language: Английский

---

Nanofabrication for Nanophotonics

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: March 28, 2025

Nanofabrication, a pivotal technology at the intersection of nanoscale engineering and high-resolution patterning, has substantially advanced over recent decades. This enables creation nanopatterns on substrates crucial for developing nanophotonic devices other applications in diverse fields including electronics biosciences. Here, this mega-review comprehensively explores various facets nanofabrication focusing its application nanophotonics. It delves into techniques like focused ion beam electron lithography, methods 3D complex structure fabrication, scalable manufacturing approaches, material compatibility considerations. Special attention is given to emerging trends such as utilization two-photon lithography structures materials phase change substances 2D with excitonic properties. By highlighting these advancements, review aims provide insights ongoing evolution nanofabrication, encouraging further research creating functional nanostructures. work encapsulates critical developments future perspectives, offering detailed narrative state-of-the-art tailored both new researchers seasoned experts field.

Language: Английский

---

Progress in Advanced Infrared Optoelectronic Sensors

Nanomaterials, Journal Year: 2024, Volume and Issue: 14(10), P. 845 - 845

Published: May 12, 2024

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human–computer interaction systems. A comprehensive understanding of infrared is great importance for achieving future optimization. This paper comprehensively reviews recent advancements sensors. Firstly, working mechanisms are elucidated. Then, key metrics evaluating an sensor introduced. Subsequently, overview promising materials nanostructures high-performance sensors, along with performances state-of-the-art devices, presented. Finally, challenges facing posed, some perspectives optimization discussed, thereby paving way development

Language: Английский

---

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

Nanoscale Horizons, Journal Year: 2024, Volume and Issue: 9(10), P. 1599 - 1629

Published: Jan. 1, 2024

The applications of 2D material photodetectors in extensive fields, including imaging, health monitoring, tracking, logic operation, ultraviolet communications, automatic driving, and acoustic signal detection, have been introduced.

Language: Английский

---

High‐Gain and Tunable Linear Photodetection in 2D Tunneling Heterostructures Through Potential Engineering

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 15, 2024

Abstract 2D materials are extensively employed in the fabrication of high‐performance photodetectors owing to their exceptional physical properties. However, most material fail sustain high gain under intense illumination due limited intrinsic trap states. Here, an n‐n type Bi 2 O Se/SnSe van der Waals tunneling heterojunction photodetector with a detection range from visible near‐infrared (VIS‐NIR) is presented. Under reverse bias, induces significant electron barrier and hole potential well, ensuring low leakage current ample defect Therefore, demonstrated responsivity 1636.3 AW −1 detectivity 1.39 × 10 14 Jones 660 nm illumination, maintaining tunable linear dynamic (LDR) ≈74.7 dB. This performance attributed well‐suppressing recombination photogenerated carriers, thereby enhancing device's gain. Furthermore, electrons within heterojunction's space charge region bias enables rapid response (75.1 15.6 µs). In summary, study introduces novel strategy overcome capabilities devices characterized by outstanding linearity for high‐resolution imaging.

Language: Английский

---