Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Small, Journal Year: 2023, Volume and Issue: 19(16)

Published: Jan. 19, 2023

Abstract Rapidly evolving group‐10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group‐10‐TMDCs possess unique structures, narrow bandgap, influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents latest developments in fabrication photodetectors based on conventional 2D TMDCs. It mainly focuses recent from perspective lattice structure synthesis techniques. Recent progress their heterostructures with different dimensionality materials‐based is provided. Moreover, this accounts applications fields nanoelectronics optoelectronics. Finally, conclusions outlooks are summarized provide perspectives next‐generation

Language: Английский

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Two dimensional borophene nanomaterials: Recent developments for novel renewable energy storage applications

Progress in Solid State Chemistry, Journal Year: 2023, Volume and Issue: 71, P. 100416 - 100416

Published: Aug. 15, 2023

Language: Английский

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Carbon nanotubes for sustainable environmental remediation: A critical and comprehensive review

Nano-Structures & Nano-Objects, Journal Year: 2024, Volume and Issue: 37, P. 101099 - 101099

Published: Jan. 20, 2024

Language: Английский

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Advancements in Optoelectronics: Harnessing the Potential of 2D Violet Phosphorus

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: July 24, 2024

Abstract Recently, 2D violet phosphorus (VP), a new kind of allotrope has attained significant attention owing to its remarkable electronic, optical, and magnetic characteristics. Tunable, large direct bandgap, high charge carrier mobility, optical absorption make it potential candidate for realizing photoelectronic applications. VP demonstrates unique electronic structure, chemical stability, strong light‐matter interaction, thermal stability that can be utilized assembling intelligent devices. This review article provides comprehensive investigations the latest synthesis techniques employed develop including structural characterizations, degradation mechanisms. Furthermore, this diverse applications in optoelectronics, photodetectors, polarization detection, imaging systems, neuromorphic optoelectronic devices, many others. Finally, challenges future research directions associated with terms optoelectronics are discussed. Overall, as presented, offers an extensive study VP, covering synthesis, insights mechanisms, aim stimulating further development growing field.

Language: Английский

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Electrospun Coaxial Nanowire‐Based FETs with Annular Heterogeneous Interface Gain for Intelligent Functional Electronics

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(25)

Published: Feb. 6, 2024

Abstract Exploitation of low‐dimensional metal‐oxide semiconductor nanowires (MOS NWs) with peculiar and radial coaxial architectures is great significance for constructing nanoscale, high‐performance, multi‐module integrable functional electronic products. Here, highly ordered In 2 O 3 @ZnO NW arrays (CNWA) using a simple economical electrospinning technique are synthesized assembled into field‐effect transistors (FETs). Featuring strong carrier effusion efficiency at the circular heterogeneous interface, field effect mobility (ε FE ) gets an intrinsic improvement can reach as high 202.3 cm V ‒1 s ‐k ‐based CNWA FETs, which exceeds performance oxide‐based FETs devices reported by far. Furthermore, unique structural advantages endowing excellent optoelectronic coupling capabilities identified, further detection artificial photonic synaptic constructed simulations implemented. This work offers new insights in designing optoelectronics synapses to process recognize information neuromorphic computing intelligence applications.

Language: Английский

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Molybdenum Disulfide-based field effect transistor biosensors for medical diagnostics: Exploring a decade of advancements (2014–2024)

TrAC Trends in Analytical Chemistry, Journal Year: 2024, Volume and Issue: 176, P. 117742 - 117742

Published: May 2, 2024

Language: Английский

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Introduction, production, characterization and applications of defects in graphene

Journal of Materials Science Materials in Electronics, Journal Year: 2021, Volume and Issue: 32(15), P. 19991 - 20030

Published: July 13, 2021

Language: Английский

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A review of the synthesis, fabrication, and recent advances in mixed dimensional heterostructures for optoelectronic devices applications

Applied Materials Today, Journal Year: 2022, Volume and Issue: 30, P. 101717 - 101717

Published: Dec. 12, 2022

Language: Английский

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The recent advances in the approach of artificial intelligence (AI) towards drug discovery

Frontiers in Chemistry, Journal Year: 2024, Volume and Issue: 12

Published: May 31, 2024

Artificial intelligence (AI) has recently emerged as a unique developmental influence that is playing an important role in the development of medicine. The AI medium showing potential unprecedented advancements truth and efficiency. intersection to revolutionize drug discovery. However, also limitations experts should be aware these data access ethical issues. use techniques for discovery applications increased considerably over past few years, including combinatorial QSAR QSPR, virtual screening,

Language: Английский

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Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 15, 2024

Abstract 2D van der Waal (vdWs) heterostructures present unique optoelectronic characteristics, making them favorable layer structures for constructing promising devices with multifunctional applications. Nevertheless, as a result of significant interface recombination the photogenerated electron‐hole pairs and presence various absorption edges within constituent layers, they are prone to experiencing low carrier collection efficiency. In this work, combined theoretical experimental investigation presented on 2 Se 3 /ReS vdWs heterostructure, aimed at developing high‐performance broadband photodetector multifunctionalities. investigations, it is observed that, by adjusting polarization states (+P −P) in layer, band alignment can be effectively tuned from type‐I type‐II, providing narrow bandgap ≈0.65 eV, which beyond that their individual constituents. As photodetector, device shows photoresponse ranging 532 1550 nm ultrahigh responsivity (99.36 AW −1 ), detectivity (3.5 × 10 13 Jones), external quantum efficiency (34195%). Additionally, competitive sensitivity across broad spectrum imagining capability heterostructure. This study demonstrates heterostructure provides technique

Language: Английский

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