Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 5, 2024

Abstract Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet growing demands diverse applications spanning spectrum from ultraviolet (UV) terahertz (THz). 2D materials very attractive photodetector because their distinct optical electrical properties. The atomic‐thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, absorption coefficient significantly benefit chip‐scale production integration materials‐based photodetectors. extremely sensitive detection at ambient temperature with ultra‐fast capabilities is made possible adaptability materials. Here, recent progress photodetectors based on materials, covering UV THz reported. In this report, light first deliberated in terms physics. Then, various mechanisms which detectors work, important performance parameters, fruitful fabrication methods, fundamental properties types detectors, different strategies improve performance, discussed.

Language: Английский

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Machine learning accelerated nonadiabatic dynamics simulations of materials with excitonic effects

The Journal of Chemical Physics, Journal Year: 2025, Volume and Issue: 162(2)

Published: Jan. 8, 2025

This study presents an efficient methodology for simulating nonadiabatic dynamics of complex materials with excitonic effects by integrating machine learning (ML) models simplified Tamm–Dancoff approximation (sTDA) calculations. By leveraging ML models, we accurately predict ground-state wavefunctions using unconverged Kohn–Sham (KS) Hamiltonians. These ML-predicted KS Hamiltonians are then employed sTDA-based excited-state calculations (sTDA/ML). The results demonstrate that energies, time-derivative couplings, and absorption spectra from sTDA/ML accurate enough compared those conventional density functional theory based sTDA (sTDA/DFT) Furthermore, sTDA/ML-based molecular simulations on two different systems, namely chloro-substituted silicon quantum dot monolayer black phosphorus, achieve more than 100 times speedup the linear response time-dependent DFT simulations. work highlights potential ML-accelerated studying complicated photoinduced large offering significant computational savings without compromising accuracy.

Language: Английский

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A review on advancement of materials for terahertz applications

Next Materials, Journal Year: 2025, Volume and Issue: 6, P. 100479 - 100479

Published: Jan. 1, 2025

Language: Английский

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Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb₂S₃ heterojunction

Applied Physics Express, Journal Year: 2025, Volume and Issue: 18(1), P. 015003 - 015003

Published: Jan. 1, 2025

Abstract Graphene photodetectors face challenges like weak absorption and narrow spectral range. To overcome these weakness, we proposed a novel photodetector based on Gold (Au)/Graphene/Chalcogenide (Sb 2 S 3 ) hetero-junction, leveraging surface plasmonic phase-transition effects. Simulations show that optimizing Au Sb nanoantenna thicknesses diameters can achieve an efficiency of 0.9 for both amorphous crystalline states, with adjustable wavelength range 200 nm. The device demonstrates superior performance, including responsivity 125 A W −1 , quantum 1.36 × 10 4 %, detectivity 2.25 9 Jones, offering pathway to next-generation optoelectronic chips.

Language: Английский

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Fabrication of a wearable and foldable photodetector based on a WSe₂-MXene 2D–2D heterostructure using a scalable handprint technique

Nanoscale, Journal Year: 2024, Volume and Issue: 16(20), P. 10011 - 10029

Published: Jan. 1, 2024

Several studies on semiconductor material-based single-band, high-performance photosensitive, and chemically stable photodetectors are available; however, the lack of broad spectral response, device flexibility, biodegradability prevents them from being used in wearable flexible electronics.

Language: Английский

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Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe₃/MoS₂

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(25), P. 32334 - 32343

Published: June 11, 2024

Transition metal thiophosphates (MTPs) are a group of emerging van der Waals materials with widely tunable band gaps. In the MTP family, CdPSe

Language: Английский

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Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

Nanoscale Horizons, Journal Year: 2024, Volume and Issue: 9(10), P. 1599 - 1629

Published: Jan. 1, 2024

The applications of 2D material photodetectors in extensive fields, including imaging, health monitoring, tracking, logic operation, ultraviolet communications, automatic driving, and acoustic signal detection, have been introduced.

Language: Английский

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Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization

The Journal of Physical Chemistry C, Journal Year: 2024, Volume and Issue: 128(10), P. 4119 - 4142

Published: March 4, 2024

The development of new materials for short-wavelength infrared (SWIR) optical sensors is high importance the fast different applications, as, example, Internet Things, road safety, and pollution monitoring. Group IV SiGe provides more sustainable As-, Cd-, Pb-free nanomaterials that are cheaper ecologic offer easy integration with CMOS technology. This Review on Ge quantum dots/nanocrystals (QDs/NCs) embedded in dielectrics VIS-SWIR photodetection, which we highlight discuss photocurrent mechanisms, correlation photodetection parameters characteristics crystalline structure, morphology energy bandgap, applications as photodetectors, sensors, phototransistors, solar cells. embedding matrix induces NC surface passivation, stress field, nanocrystallization effects brings specific advantages depending material. NCs oxides sensing represents a niche domain, showing photosensitivity (photocurrent) SWIR up to 1.8 μm at room temperature 2 100 K, deeper than Ge. By alloying small content Si, thermal stability much improved detrimental diffusion hindered photosensing enhanced due light absorption Ge-rich NCs.

Language: Английский

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Infrared Photodetectors: Recent Advances and Challenges Toward Innovation for Image Sensing Applications

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 3, 2024

Abstract High‐resolution infrared (IR) imaging technology holds substantial significance across diverse fields including biomedical imaging, environmental surveillance, and IR digital cameras. Current detectors used in commercial applications are based on ultra‐high vacuum‐processed traditional inorganic semiconductors like silicon or III‐V compounds (e.g., Si, Ge, InGaAs). However, the rapid advancements such as autonomous vehicles, virtual reality, point‐of‐care healthcare driving an escalating need for innovative technologies. This review aims to bridge gap by exploring solution‐processed semiconductor photodetectors (PDs), which offer distinct advantages cost‐effectiveness, tunable spectral response, potential multiple‐exciton generation. These characteristics make them particularly suitable optical communication, biological monitoring applications. provides comprehensive insights into research trends pertaining imagers colloidal quantum dots, perovskites, organic compounds, 2D materials. The commences with current market worth of image sensors, fundamental principles single‐pixel multipixel array imagers, key parameters assess detector performance. In essence, concludes a summary recent future prospects next‐generation PD devices their application imager.

Language: Английский

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Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM

APL Materials, Journal Year: 2025, Volume and Issue: 13(4)

Published: April 1, 2025

Kelvin Probe Force Microscopy (KPFM) under laser illumination is employed to investigate the band structure of MoS2–WS2 heterostructures and its impact on charge carrier separation at heterointerface. Heterostructures in two distinct stacking orders—MoS2 WS2 MoS2—were directly grown by metal–organic chemical vapor deposition, i.e., without any mechanical layer transfer processes. This resulted a pristine interface efficient interlayer coupling, as evidenced uniform work function 4.6 eV for both orders. Illumination experiments demonstrate photogenerated carriers across heterointerface visualized changes surface potential. Utilizing KPFM measurements augmenting them with Raman time-resolved photoluminescence data, relationship between conduction minimum valence maximum heterostructure experimentally measured parameters established. Through this analysis, we identify lower limit bandgap ∼1.2 ambient conditions, which ascribed indirect K–Γ transition. finding offers critical insights deployment 2D applications such photodetection devices.

Language: Английский

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