Nano Letters,
Journal Year:
2024,
Volume and Issue:
24(17), P. 5139 - 5145
Published: April 19, 2024
Dynamic
tuning
of
thermal
transport
in
solids
is
scientifically
intriguing
with
wide
applications
for
control
electronic
devices.
In
this
work,
we
demonstrate
a
transistor,
device
which
heat
flow
can
be
regulated
using
external
control,
realized
topological
insulator
(TI)
through
the
surface
states.
The
achieved
by
optical
gating
thin
dielectric
layer
deposited
on
TI
film.
gate-dependent
conductivity
measured
micro-Raman
thermometry.
transistor
has
large
ON/OFF
ratio
2.8
at
room
temperature
and
continuously
repetitively
switched
tens
seconds
potentially
much
faster
electrical
gating.
Such
transistors
fast
switching
times
offer
possibilities
smart
devices
active
management
future
systems.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
34(49)
Published: Aug. 23, 2024
Abstract
Individuals
are
easily
threatened
by
heat
stress
or
hypothermia
in
outdoor
environments.
Therefore,
there
is
a
pressing
necessity
for
thermal
regulation
materials
capable
of
adapting
to
temperature
shocks.
Herein,
an
aerogel‐functionalized
textile
as
passive
regulator
(AT‐PTR)
designed
and
demonstrated,
comprising
heating
side
composed
carbon
nanotube‐modified
cotton
fabric
cooling
built
silica
poly(vinylidene‐co‐hexafluoropropene)
P(VdF‐HFP)
nanofibers.
The
AT‐PTR
demonstrates
exceptional
solar
absorption
on
the
side,
achieving
warming
performance
23.2
°C
cold
winter.
On
its
high
reflectance
infrared
emissivity
facilitate
sub‐ambient
effect
12.7
during
hot
summer.
Moreover,
field
tests
conducted
across
various
regions
seasons
demonstrate
all‐seasonal
human
management
capability.
Additionally,
exhibits
outstanding
wind‐proof
moisture
permeability,
flow
can
be
simply
attained
flipping
AT‐PTR,
ensuring
sustained
comfort
individuals
Science Advances,
Journal Year:
2025,
Volume and Issue:
11(1)
Published: Jan. 1, 2025
Thermal
switches,
which
electrically
turn
heat
flow
on
and
off,
have
attracted
attention
as
thermal
management
devices.
Electrochemical
reduction/oxidation
switches
the
conductivity
(κ)
of
active
metal
oxide
films.
The
performance
previously
proposed
electrochemical
is
low;
on/off
κ-ratio
mostly
less
than
5,
κ-switching
width
5
watts
per
meter
kelvin.
We
used
a
CeO
2
thin
film
layer
deposited
solid
electrolyte
YSZ
substrate.
When
was
reduced
once
(off-state)
then
oxidized
(on-state),
κ
about
2.2
kelvin
in
most
state,
increased
with
oxidation
to
12.5
(on-state).
This
reduction
(off-state)/oxidation
(on-state)
cycle
repeated
100
times,
5.8,
10.3
-based
solid-state
would
be
potential
devices
for
shutters
displays.
Nature Communications,
Journal Year:
2024,
Volume and Issue:
15(1)
Published: July 3, 2024
Abstract
Polymeric
thermal
switches
that
can
reversibly
tune
and
significantly
enhance
their
conductivities
are
desirable
for
diverse
applications
in
electronics,
aerospace,
automotives,
medicine;
however,
they
rarely
achieved.
Here,
we
report
a
polymer-based
switch
consisting
of
an
end-linked
star-shaped
thermoset
with
two
independent
conductivity
tuning
mechanisms—strain
temperature
modulation—that
rapidly,
reversibly,
cyclically
modulate
conductivity.
The
exhibits
strain-modulated
enhancement
up
to
11.5
at
fixed
60
°C
(increasing
from
0.15
2.1
W
m
−1
K
).
Additionally,
it
demonstrates
temperature-modulated
ratio
2.3
stretch
2.5
0.17
0.39
When
combined,
these
effects
collectively
enable
the
achieve
14.2.
Moreover,
reversible
over
1000
cycles.
two-way
is
attributed
synergy
aligned
amorphous
chains,
oriented
crystalline
domains,
increased
crystallinity
by
elastically
deforming
thermoset.
Nature Communications,
Journal Year:
2024,
Volume and Issue:
15(1)
Published: July 3, 2024
Control
of
heat
flow
is
critical
for
thermal
logic
devices
and
management
has
been
explored
theoretically.
However,
experimental
progress
on
active
control
limited.
Here,
we
describe
a
nanoscale
radiative
transistor
that
comprises
hot
source
cold
drain
(both
are
~250
nm-thick
silicon
nitride
membranes),
which
analogous
to
the
electrodes
transistor.
The
in
close
proximity
vanadium
oxide
(VO
Chemistry of Materials,
Journal Year:
2024,
Volume and Issue:
36(4), P. 2085 - 2095
Published: Feb. 8, 2024
Carboranedithiol
isomers
adsorbing
with
opposite
orientations
of
their
dipoles
on
surfaces
are
self-assembled
together
to
form
mixed
monolayers
where
both
lateral
dipole–dipole
and
thiol–thiolate
(S–H···S)
interactions
provide
enhanced
stability
over
single-component
monolayers.
We
demonstrate
the
first
instance
ability
map
individual
in
a
monolayer
using
model
system
carboranedithiols
Au{111}.
The
addition
methyl
groups
one
isomer
provides
an
dipole
moment
extra
apparent
height
for
differentiation
via
scanning
tunneling
microscopy
(STM).
Associated
computational
investigations
rationalize
favorable
pairs
associated
changes
that
arise
from
these
interactions.
Both
STM
images
Monte
Carlo
simulations
yield
similarly
structured
monolayers,
approximately
10%
molecules
have
reversed
but
no
direct
chemical
attachment
surface,
leading
homogeneous
phase
separation.
Deprotonating
thiols
by
depositing
under
basic
conditions
eliminates
S–H···S
while
accentuating
forces.
molecular
investigated
is
composed
isomeric
identical
surface
packing,
which
enables
mapping
within
analyses
contributions
relatively
weak
overall
assemblies.
Applied Physics Letters,
Journal Year:
2024,
Volume and Issue:
125(3)
Published: July 15, 2024
Wide
and
ultrawide
bandgap
semiconductors,
such
as
GaN,
play
a
crucial
role
in
high-power
applications,
yet
their
performance
is
often
constrained
by
thermal
management
challenges.
In
this
work,
we
introduce
high-quality
interface
between
GaN
AlN,
prepared
through
wafer-scale
bonding
verified
via
high-resolution
transmission
electron
microscopy
transport
experiments.
We
experimentally
measured
the
boundary
conductance
of
GaN–AlN
interface,
achieving
up
to
320
MW/m2K
at
room
temperature
using
an
ultrafast
optical
technique
sensitivity
examinations.
Non-equilibrium
atomistic
Green's
functions
density
functional
theory
simulations
were
conducted
model
phonon
modes
contributions
transport,
demonstrating
good
agreement
with
experimental
results
from
80
300
K.
Additionally,
observed
size-dependent
effect
on
related
film
thickness
180
450
nm,
which
attributed
quasi-ballistic
molecular
dynamics
simulations.
Our
study
has
demonstrated
scalable
processing
route
for
wafer-sized
chip
packaging
provides
fundamental
insights
mitigate
near-junction
resistance.
Further
exploration
engineering
could
facilitate
co-design
strategies
advanced
technologies.
